20 A CLASS B POWER TRANSISTORS CURRENT GAIN Search Results

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

2N3632

Abstract: 2N3375 2N3373
Contextual Info: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN

ssm2164

Abstract: sm2024 OP482 equivalent
Contextual Info: ANALOG DEVICES FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation Low Cost Quad Voltage Controlled Amplifier SSM2164 FUNCTIONAL BLOCK DIAGRAM

TH430

Abstract: SD1728 M177
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

4431 8 PIN

Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
Contextual Info: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431

2164 20 pin

Abstract: v 2164 m
Contextual Info: ANALOG ► DEVICES Low Cost Quad Voltage Controlled Amplifier SSM2164 FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain M atching U nity Gain Class A or AB Operation FUNCTIONAL BLOCK DIAGRAM

c1969 transistor

Abstract: C1969 transistor C1969 ssm2164 SSM2024 SSM2164P SSM2164S DAC8426 equivalent compandor op275
Contextual Info: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders

ssm2164

Abstract: SSM2024 C1969
Contextual Info: BACK a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders

SSM2164

Abstract: SSM2024 C1969 N-16 OP176 OP275 OP482 SSM2164P SSM2164S C601K
Contextual Info: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders

Contextual Info: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders

Arco 426

Contextual Info: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

mmic

Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
Contextual Info: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)

AD161/AD162

Abstract: AD162 AD161 GP 015 DIODE AD149 AC176 AC126 AC187 AC127 OC201
Contextual Info: 'TaiïuX 51 Electronic Valves Z & I Aero Services Ltd London England 1972-73 Tra n sisto rs Continued Notes Type Constr O utline P,ot fa Vcbo hfm at i c Notes Price £ O C200 S/PNP R08 200mW 7 00 kcl2 -2 5 1 5 -6 0 1mA Low Gain G.P. 0.30 OC201 S/PNP R08 200mW

2SD1990

Abstract: IC003
Contextual Info: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)

Contextual Info: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 • Features • V ery good linearity of DC current gain Ii f e • Wide area of safety operation (ASO) • High transition frequency (ft)

2sd1070

Contextual Info: SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! ! 130 - 400 MHz 28 Volts High Power Gain High Efficiency Common Emitter POUT = 13.5 W Min. @ 175 MHz IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: Power Transistors 2SD2140 2SD2140 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 ■ Features • V ery good lin e a rity of DC c u r re n t gain I i f e • W ide a re a of good lin e a rity (ASO)

NJ 20 U1 W

Abstract: 2SB1250 2SD1890
Contextual Info: Power Transistors 2SD1890 2S D 1890 Silicon NPN Triple-Diffused Planar Darlington Type • Power Amplifier Complementary Pair with 2SB1250 Package Dimensions ■ Features • S w itchable for 25W hi-fi output • High DC current gain Iif e : 50 0 0 —30000

2SB1421

Abstract: 2SD2140
Contextual Info: Power Transistors 2SB1421 2SB1421 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 2 1 4 0 • Features • V ery good linearity of DC c u rre n t gain Iif e • Wide area of safety operation (ASO) • High transition frequency (f-r)

2SD1990

Contextual Info: Power Transistors 2SD1990 2SD1990 Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Switching • Features • H igh sp e e d sw itch in g • G ood lin earity of DC c u r r e n t gain Iìf e • L a rg e c o lle c to r p o w e r d issip atio n (P c)

transistors 1UW

Abstract: 2SD2151
Contextual Info: Power Transistors 2SD2151 2SD2151 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching • Features • • • • Low collector-em itter saturation voltage VcEisatj Good linearity of DC current gain (hFt) High collector current (Ic) “Full Pack” package for simplified m ounting on a heat sink with one

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching