20 SOT23-6 ESD Search Results

W20R

Contextual Info: Features • DEA 24Q 02 ■ 6 003 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification* Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23

2DEA-2-Q24R

Abstract: 2DEA-2-Q24T 2DEB-2-W20R 2DEB-2-W20T 2QSP24 BAV99 DEA002 MO-137 MS-013 BIDIRECTIONAL DIODE
Contextual Info: Features • DEA 24Q 02 ■ 003 6 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification† Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23

Contextual Info: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

ZXTC2062E6

Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
Contextual Info: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

3554M

Contextual Info: A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to

MAX4514

Abstract: AE MARKING 5PIN
Contextual Info: 19-1069; Rev 0; 6/96 Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package ♦ +2V to +12V Single-Supply Operation ♦ Guaranteed On-Resistance: 20Ω with +5V Supply 10Ω with +12V Supply

Marking AE sot23-5

Abstract: MAX4514 w8001 Marking AE sot235 AF SOT23-5 MAX4514CUK MAX4514CPA MAX4514CSA MAX4515 sot23-5 AE
Contextual Info: 19-1069; Rev 0; 6/96 Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package ♦ +2V to +12V Single-Supply Operation ♦ Guaranteed On-Resistance: 20Ω with +5V Supply 10Ω with +12V Supply

Contextual Info: LM2765 www.ti.com SNVS070B – MAY 2004 – REVISED OCTOBER 2004 LM2765 Switched Capacitor Voltage Converter Check for Samples: LM2765 FEATURES APPLICATIONS • • • • • • • • • • • 1 2 Doubles Input Supply Voltage SOT23-6 Package 20 Typical Output Impedance

Contextual Info: LM2766 www.ti.com SNVS071A – MAY 2004 – REVISED OCTOBER 2004 LM2766 Switched Capacitor Voltage Converter Check for Samples: LM2766 FEATURES APPLICATIONS • • • • • • • • • • • 1 2 Doubles Input Supply Voltage SOT23-6 Package 20 Typical Output Impedance

Contextual Info: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance

ZXMN2088

Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
Contextual Info: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

1F SOT 23

Abstract: 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • Pb-Free Packages are Available 3 MAXIMUM RATINGS Rating

Contextual Info: DIODE SOLUTIONS ESD PROTECTION DEVICES SMC Diodes www.smc-diodes.com 003-0415 ESD Protection Devices FEATURES APPLICATIONS • Protects 3.3V, 5V, 12V, 15V, 24V component • Low junction capacitance • Provides electrically isolated protection • Small package solutions

smd code marking WV

Abstract: sot23-4 marking a1 A1 SOT23 marking code E1 sot23 marking code NA sot23 MARKING SOT23 .215 .235 12nc sot23-6 can bus automotive DIODE package sot23 smd marking A1 A.1 SOT23-4
Contextual Info: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 01 — 25 January 2005 Objective data sheet 1. Product profile 1.1 General description PESD1CAN in small SOT23 SMD plastic package designed to protect two automotive Control Area Network CAN bus lines from the damage caused by ElectroStatic

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with

LBC858ALT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with

BC557 sot package sot-23

Abstract: BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with

LBC846BLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

LBC857BLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with