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    200 AMPERE POWER DIODE Search Results

    200 AMPERE POWER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    200 AMPERE POWER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    MJ10021 equivalent

    Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
    Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for


    Original     		PDF MJ10020 MJ10021 MJ10020 MJ10021 r14525 MJ10020/D MJ10021 equivalent SUS CIRCUIT 1N4937 tektronix 475

    1N4937

    Abstract: MJ10020 MJ10021 AN222A
    Text: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS


    Original     		PDF 204AE 1N4937 MJ10020 MJ10021 AN222A

    1N4937

    Abstract: MJ10020 MJ10021
    Text: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS


    Original     		PDF MJ10020/D* MJ10020/D 1N4937 MJ10020 MJ10021

    BAV19

    Abstract: BAV20 BAV21
    Text: BAV19 THRU BAV21 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE - 100 to 200 Volts CURRENT - 0.2 Ampere FEATURES * * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency


    Original     		PDF BAV19 BAV21 DO-34 DO-35 MIL-STD-202E, DO-34 BAV19 BAV21) BAV20 BAV21

    BAV19

    Abstract: High Speed Switching Diodes
    Text: HITANO ENTERPRISE CORP. BAV19 THRU BAV21 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE - 100 to 200 Volts CURRENT - 0.2 Ampere FEATURES * * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage Low forward voltage


    Original     		PDF BAV19 BAV21 DO-34 DO-35 MIL-STD-202E, DO-34" BAV19M) High Speed Switching Diodes

    BAV16WS

    Abstract: No abstract text available
    Text: HITANO ENTERPRISE CORP. BAV16WS THRU BAV21WS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency


    Original     		PDF BAV16WS BAV21WS OD-323 MIL-STD-202E, BAV21WS) BAV19WS-

    BAS16

    Abstract: No abstract text available
    Text: HITANO ENTERPRISE CORP. BAS16 THRU BAS21 TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency


    Original     		PDF BAS16 BAS21 OT-23 MIL-STD-202E, BAS21) BAS19- BAS21

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


    Original     		PDF MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100

    BAS16W

    Abstract: No abstract text available
    Text: HITANO ENTERPRISE CORP. BAS16W THRU BAS21W TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency


    Original     		PDF BAS16W BAS21W OT-323 MIL-STD-202E, BAS21W) BAS19W-

    BAV16W

    Abstract: No abstract text available
    Text: HITANO ENTERPRISE CORP. BAV16W THRU BAV21W TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency


    Original     		PDF BAV16W BAV21W OD-123 MIL-STD-202E, BAV21W) BAV19W-

    BAV19W

    Abstract: No abstract text available
    Text: HITANO ENTERPRISE CORP. BAV16W THRU BAV21W TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency


    Original     		PDF BAV16W BAV21W OD-123 MIL-STD-202E, BAV21W) BAV16W BAV19W- BAV19W

    mje15033 replacement

    Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


    Original     		PDF MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100

    BU806 MOTOROLA

    Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    Original     		PDF BU806/D* BU806/D BU806 MOTOROLA BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127

    CASE 221A Style 1

    Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    Original     		PDF 220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326

    BU108

    Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —


    Original     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N5301 2N5302 BU108 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent

    CHM640NGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CHM640NGP CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. D2PAK


    Original     		PDF CHM640NGP CHM640NGP

    CHM630PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM630PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM630PAGP O-252) CHM630PAGP

    Untitled

    Abstract: No abstract text available
    Text: Test Procedure for the NCP5104 29-Oct-07 A Vac A V V J2 jumper Table 1: Required Equipment AC power source can be able to two volt-meters deliver 230Vrms or 110Vrms One NCP5104 Evaluation Board 1 resistive load: 200 Ω / 50 W two ampere-meters Rload 200Ω


    Original     		PDF NCP5104 29-Oct-07 230Vrms 110Vrms NCP5104

    MURF1620

    Abstract: MURF1620CT
    Text: MURF1620CT Dual Ultrafast Plastic Rectifiers ITO-220AB PRV : 200 Volts Io : 16 Ampere 0.134 3.4 DIA. 0.113(3.0)DIA. FEATURES : 0.112(2.85) 0.100(2.55) 0.185(4.70)Max. 0.406(10.3)MAX. 0.124(3.16)Max. 0.272(6.9) 0.248(6.3) * Ideally suited for free wheeling diode power factor


    Original     		PDF MURF1620CT ITO-220AB MURF1620 MURF1620CT

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    OCR Scan     		PDF BU806/D BU806 -220A 21A-06 O-220AB

    npn darlington transistor 200 watts

    Abstract: Motorola Bipolar Power Transistor Data motorola darlington power transistor transistor 3250
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    OCR Scan     		PDF BU806 O-220AB 21A-06 O-220AB npn darlington transistor 200 watts Motorola Bipolar Power Transistor Data motorola darlington power transistor transistor 3250

    mj power transistor speedup diode

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage,


    OCR Scan     		PDF MJ10020 MJ10021 MJ10020 MJ10021 10biased mj power transistor speedup diode