200 MIL BEO PACKAGE NPN Search Results

200 MIL BEO PACKAGE NPN Result Highlights (5)

Part	Manufacturer	Description
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

200 MIL BEO PACKAGE NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AT-64020 Contextual Info: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:	OCR Scan	AT-64020	PDF
at6400 Abstract: AT-64000-GP4 AT-64000 Contextual Info: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and	Original	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN AV02-1929EN at6400 AT-64000-GP4	PDF
at 64000 Abstract: at64000 S21E at-64000 Contextual Info: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over	Original	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E	PDF
AT64020 Abstract: AT-64020 S21E Contextual Info: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 AT64020 S21E	PDF
AT-64020 Abstract: S21E Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 5965-8915E S21E	PDF
AT-64023 Abstract: S21E Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 5965-8916E S21E	PDF
AT-64023 Abstract: S21E Contextual Info: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 S21E	PDF
Contextual Info: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic	OCR Scan	AT-64023 AT-64023 5965-8916E 0017fc	PDF
AT-64023 Abstract: S21E Contextual Info: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for	Original	AT-64023 AT-64023 5989-2658EN AV02-1221EN S21E	PDF
AT64020 Abstract: AT-64020 Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 5965-8915E AT64020	PDF
AT-64020 Abstract: 200 mil BeO package Contextual Info: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 5965-8915E 5989-2657EN 200 mil BeO package	PDF
AT-64020 Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn Contextual Info: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for	Original	AT-64020 AT-64020 5989-2657EN AV02-1220EN S21E Silicon Bipolar Transistor 200 mil BeO package npn	PDF
AT-64023 Abstract: S21E 156 51 MA2670 Contextual Info: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for	Original	AT-64023 AT-64023 reliaT-64023 5989-2658EN AV02-1221EN S21E 156 51 MA2670	PDF
200 mil BeO package Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107 Contextual Info: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and	Original	AT-64020 AT-64020 5965-8915E 5989-2657EN 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107	PDF

bipolar transistor s-parameter Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ Contextual Info: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed	Original	AT-64023 AT-64023 5965-8916E 5989-2658EN bipolar transistor s-parameter bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ	PDF
transistor s11 s12 s21 s22 Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22	PDF
Contextual Info: W tiol H EW LETT mL'HM PA C K A R D Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features D escription • High Output Power: 27.5 dBm Typical Px^ at 2.0 GHz 26.5 dBm Typical Px^ at 4.0 GHz The AT-64020 is a high perfor m ance NPN silicon bipolar	OCR Scan	AT-64020 AT-64020 QQ17b7fi 5965-8915E	PDF
AT-64020 Contextual Info: What H E W L E T T * mLliM PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical PldB at 2.0 GHz 26.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 10.0dBTypicaIGldBat2.0 GHz	OCR Scan	AT-64020 AT-64020	PDF
Contextual Info: What H E W L E T T * mLliMPACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical PldB at 2.0 GHz 26.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 12.5dBTypicaIGldBat2.0 GHz	OCR Scan	AT-64023 AT-64023	PDF
AVANTEK transistor Contextual Info: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:	OCR Scan	AT-64023 AT-64023 AVANTEK transistor	PDF
Contextual Info: AT-64023 Up to 4 GHz Linear Powér Silicon Bipolar Transistor Vfìjm H EW LETT mLHÆ P A C K A R D Features 230 mil BeO Flange Package • High Output Power: 28.0 dBm typical Pi ¿Bat 2.0 GHz 27.0 dBm typical Pi «»at 4.0 GHz • High Gain at 1 dB Compression:	OCR Scan	AT-64023	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
Contextual Info: ZPioducti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLX95 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the	Original	BLX95 200mA;	PDF
generator of frequency 900 MHz Abstract: TRANSISTOR D 880 Contextual Info: ASP-0910 10 Watt, 900 MHz Silicon Power Transistor Whp% H EW LETT mi'tim PACK ARD Features • • • • • • Power Flange Power Out: 10 Watts Common Base Class C Power Transistor Frequency: 800-960 MHz Voltage: 25 V Efficiency: 50% Min. Load Mismatch Tolerance: 10:1	OCR Scan	ASP-0910 SP-0910 generator of frequency 900 MHz TRANSISTOR D 880	PDF

200 MIL BEO PACKAGE NPN Search Results

200 MIL BEO PACKAGE NPN Result Highlights (5)

200 MIL BEO PACKAGE NPN Datasheets Context Search

AT-64020

at6400

at 64000

AT64020

AT-64020

AT-64023

AT-64023

AT-64023

AT64020

AT-64020

AT-64020

AT-64023

200 mil BeO package

bipolar transistor s-parameter

transistor s11 s12 s21 s22

AT-64020

AVANTEK transistor

C42V5964

generator of frequency 900 MHz