2000-23 K4 Search Results
2000-23 K4 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
ST2000GXH32 |
![]() |
IEGT, 4500 V, 2000 A, 2-168A2S |
![]() |
||
BQ2000TSN-B5 |
![]() |
Switch-mode multi-chemistry battery charger with dT/dt termination 8-SOIC -20 to 70 |
![]() |
![]() |
|
PTH12000LAZT |
![]() |
0.8 to 1.8 V 6-A, 12-V Input Non-Isolated Wide-Adjust Module 5-Surface Mount Module -40 to 85 |
![]() |
||
TPA2000D1TPWRQ1 |
![]() |
Automotive Catalog Mono Filter-Free Class-D Audio Amplifier 16-TSSOP -40 to 105 |
![]() |
![]() |
|
TPS62000DGS |
![]() |
Adjustable, 600-mA, 95% Efficient Step-Down Converter 10-VSSOP -40 to 85 |
![]() |
![]() |
2000-23 K4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
XPC750
Abstract: Midland G9 Nippon capacitors
|
Original |
MPC750EC/D MPC750A MPC750, MPC740. MPC750 MPC740 MPC750. MPC750 MPC740) XPC750 Midland G9 Nippon capacitors | |
D13B2Contextual Info: 6023 Virtex 2.5 V Field Programmable Gate Arrays R DS003 v.2.2 May 23, 2000 3* Features • • • • • Final Product Specification • Fast, high-density Field-Programmable Gate Arrays - Densities from 50k to 1M system gates - System performance up to 200 MHz |
Original |
DS003 66-MHz FG680 D13B2 | |
Contextual Info: 23 Virtex 2.5 V Field Programmable Gate Arrays R DS003 v. 1.9 January 28, 2000 3* Features • • • • • Preliminary Product Specification • Fast, high-density Field-Programmable Gate Arrays - Densities from 50k to 1M system gates - System performance up to 200 MHz |
Original |
DS003 66-MHz s117153, CS144 | |
Contextual Info: 23 Virtex 2.5 V Field Programmable Gate Arrays R DS003 v. 1.8 January 4, 2000 3* Features • • • • • Preliminary Product Specification • Fast, high-density Field-Programmable Gate Arrays - Densities from 50k to 1M system gates - System performance up to 200 MHz |
Original |
DS003 66-MHz CS144 | |
Contextual Info: S2 Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025 v1.0 March 23, 2000 3* Advance Product Specification Features • • • • • • • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 kb and 1,120 kb embedded block RAM |
Original |
DS025 FG676 FG900 BG560 32/64-bit, 33/66-MHz XCV405E XCV812E | |
K4S641632D-TL1LContextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10 |
Original |
144pin) M466S0424DT0-L10, 4Mx64 4Mx16 K4S641632D-TL10, 000mil 4K/64ms 128bytes 256bytes 66MHz K4S641632D-TL1L | |
K4S281632C-TL1L
Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
|
Original |
144pin) 128Mb M466S0924CT0-L1L, 8Mx64 8Mx16 K4S281632C-TL1L, 000mil 4K/64ms 128bytes 256bytes K4S281632C-TL1L M466S1723CT2-L1L M466S1723CT3-L1L | |
K4S560432B-TC75
Abstract: M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung
|
Original |
PC133 168pin) M390S3253BT1-C75 32MX72 32MX8 K4S560832B-TC75 8K/64ms 128bytes K4S560432B-TC75 M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung | |
k4s280832c-tc75
Abstract: M390S3320CT1-C75 K4S280432C-TC75 16MX8 32MX72 M390S1723CT1-C75 presence information
|
Original |
PC133 168pin) M390S1723CT1-C75 16MX72 16MX8 K4S280832C-TC75 4K/64ms 128bytes k4s280832c-tc75 M390S3320CT1-C75 K4S280432C-TC75 16MX8 32MX72 M390S1723CT1-C75 presence information | |
7 segment display common anode T 5623
Abstract: numeric display HDSP 7 segment display 5621 142.PDF 7 SEGMENT DISPLAY 0.56" COMMON CATHODE
|
Original |
HDSP-K40x HDSP-550x HDSP-552x HDSP-560x HDSP-562x HDSP-570x HDSP-572x HDSP-H15x HDSP-H40x HP19990301-01: 7 segment display common anode T 5623 numeric display HDSP 7 segment display 5621 142.PDF 7 SEGMENT DISPLAY 0.56" COMMON CATHODE | |
samsung date code
Abstract: 16MX64 sdram samsung
|
Original |
PC100 144pin) 256Mb M464S1654BT1-L1H/L1L, 8MX64 16MX16 K4S561632B-TL1H/TL1L 4K/64ms samsung date code 16MX64 sdram samsung | |
16MX64
Abstract: 8MX16
|
Original |
PC100 144pin) 128Mb M464S0924MT1-L1H/L1L 8MX64 8MX16 K4S281632M-TL1H/L1L 4K/64ms 16MX64 8MX16 | |
M464S0924BT1-L1H
Abstract: M464S1724BT1-L1H 16MX64 8MX16 serial memory spd M464S
|
Original |
PC100 144pin) 128Mb M464S0924BT1-L1H/L1L, 8MX64 8MX16 K4S281632B-TL1H/L1L, 4K/64ms M464S0924BT1-L1H M464S1724BT1-L1H 16MX64 8MX16 serial memory spd M464S | |
samsung dimm 128mb pc100 144pin
Abstract: 64Mb samsung SDRAM samsung date code 16MX64 8MX16
|
Original |
PC100 144pin) 128Mb M464S0924CT1-L1H/L1L, 8MX64 8MX16 K4S281632C-TL1H/L1L, 4K/64ms samsung dimm 128mb pc100 144pin 64Mb samsung SDRAM samsung date code 16MX64 8MX16 | |
|
|||
K4S280432C-TC75
Abstract: K4S281632C
|
Original |
K4S281632C 128Mbit 16Bit K4S280432C-TC75/TL75 K4S281632C A10/AP K4S280432C-TC75 | |
K4S280432C
Abstract: K4S280432C-TC75
|
Original |
K4S280432C 128Mbit K4S280432C-TC75/TL75 K4S280432C 10/AP K4S280432C-TC75 | |
Synchronous DRAM and Samsung
Abstract: K4S280832C
|
Original |
K4S280832C 128Mbit K4S280432C-TC75/TL75 K4S280832C A10/AP Synchronous DRAM and Samsung | |
Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000 |
Original |
K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 A10/AP | |
K4S641632DContextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 June 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000 |
Original |
K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 K4S641632D A10/AP | |
K4S561632BContextual Info: K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S561632B CMOS SDRAM Revision 0.1 March 10, 2000 |
Original |
K4S561632B 256Mbit 16bit 133MHz" A10/AP K4S561632B | |
K4S560432B
Abstract: RA12
|
Original |
K4S560432B 256Mbit 133MHz" A10/AP K4S560432B RA12 | |
Contextual Info: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM |
Original |
K4S640432E 64Mbit A10/AP | |
Contextual Info: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM |
Original |
K4S640832E 64Mbit K4S640832E A10/AP | |
K4S280832CNLContextual Info: shrink-TSOP K4S280832C-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 |
Original |
K4S280832C-N K4S280832C-N 54-sTSOP K4S280832CNL |