20080317A Search Results

k2800

Contextual Info: DSSK 28-006BS IFAV = 2x15 A VRRM = 60 V VF = 0.52 V Power Schottky Rectifier with common cathode VRSM VRRM V V 60 60 A Type C A TO-263 AB C TAB A A DSSK 28-006BS A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 135°C; rectangular, d = 0.5

DPG15I300PA

Contextual Info: DSEP 15-03A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-220 AC C DSEP 15-03A A C TAB D4 A = Anode, C = Cathode, TAB = Cathode Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5

si6306

Abstract: DPG30P300PJ
Contextual Info: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220 E153432 Type DSEE29-06CC 1 2 3 Isolated back surface* Maximum Ratings

7 pin SMPS

Abstract: smps new DSEE15-06CC DSEE29-06CC
Contextual Info: DSEE15-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRM V V 600 300 Symbol ISOPLUS 220 E153432 Type DSEE15-06CC 1 Conditions 2 3 Maximum Ratings A A

Contextual Info: DSSK 28-0045BS IFAV = 2x15 A VRRM = 45 V VF = 0.43 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A TO-263 AB C TAB A A DSSK 28-0045BS Symbol Conditions IFRMS IFAV IFAV TC = 135°C; rectangular, d = 0.5 TC = 135°C; rectangular, d = 0.5; per device

DSA15I45PA

Contextual Info: DSS 10-0045A IFAV = 10 A VRRM = 45 V VF = 0.56 V Power Schottky Rectifier VRSM VRRM V V 45 45 Type A C TO-220 AC C A DSS 10-0045A C TAB Symbol Conditions IFRMS IFAV TC = 160°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive

DPG10I200PA

Contextual Info: DSEP 8-02A HiPerFREDTM Epitaxial Diode IFAV = 8 A VRRM = 200 V trr = 25 ns with soft recovery Preliminary Data VRSM VRRM V V 200 200 Type C A TO-220 AC C DSEP 8-02A A C TAB D4 Test Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine

Contextual Info: DSEE 8-06CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220 E153432 Type DSEE 8-06CC 1 2 3 Preliminary Data Sheet Isolated back surface* Conditions Maximum Ratings

dph30is600hi

Contextual Info: DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 20 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V C A Type ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 30-06CR A = Anode, C = Cathode * Patent pending

DSA30C45

Abstract: ne10
Contextual Info: DSSK 28-0045A IFAV = 2x15 A VRRM = 45 V VF = 0.55 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A TO-220 AB A C A DSSK 28-0045A C TAB Symbol Conditions IFRMS IFAV IFAV TC = 160°C; rectangular, d = 0.5 TC = 160°C; rectangular, d = 0.5; per device

KF 517

Abstract: DPG30I300PA DSEP 29-03A
Contextual Info: DSEP 29-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 TO-220 AC Type DSEP 29-03A Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine

FAST RECOVERY DIODE

Abstract: smps new DHG30I600HA DHG30I600PA
Contextual Info: DHF 30 IM 600QB advanced V RRM = I FAV = t rr = Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 30 A 35 ns 1 Part number 2 DHF 30 IM 600QB 3 Backside: cathode Applications: Package: ● Planar passivated chips ● Very low leakage current

DPG60I400HA

Contextual Info: DSEP 60-04A HiPerFREDTM Epitaxial Diode with soft recovery VRSM VRRM V V 400 400 Type IFAV = 60 A VRRM = 400 V trr = 30 ms A C DSEP 60-04A TO-247 AD C  C TAB A Symbol de si gn A = Anode, C = Cathode, TAB = Cathode Conditions Maximum Ratings IFRMS IFAVM

DSA20C

Abstract: DSA20C45PB
Contextual Info: DSSK 20-0045A IFAV = 2x10 A VRRM = 45 V VF = 0.56 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A TO-220 AB A C A DSSK 20-0045A C TAB Conditions Maximum Ratings IFRMS IFAV IFAV TC = 160°C; rectangular, d = 0.5 TC = 160°C; rectangular, d = 0.5; per device

DPG10I300PA

Contextual Info: DSEP 8-03A HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-220 AC C DSEP 8-03A A C TAB D4 Conditions Maximum Ratings IFRMS IFAVM TC = 130°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine

k2800

Abstract: DSB30C45PB VR25A
Contextual Info: DSSK 28-0045B DSSK 28-0045BS IFAV = 2x15 A VRRM = 45 V VF = 0.43 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 45 45 A Type C A TO-220 AB B-Type A C A DSSK 28-0045B DSSK 28-0045BS C (TAB) TO-263 AB (BS-Type) C (TAB) A A Symbol Conditions

DPH30IS600HI

Contextual Info: DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 9 A VRRM = 600 V trr = 15 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 9-06CR A = Anode, C = Cathode * Patent pending

DSA30C45HB

Contextual Info: DSSK 30-0045A IFAV = 2x15 A VRRM = 45 V VF = 0.54 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A TO-247 AD A C DSSK 30-0045A A C TAB Symbol Conditions IFRMS IFAV IFAV TC = 160°C; rectangular, d = 0.5 TC = 160°C; rectangular, d = 0.5; per device

DPG20C

Abstract: DPG20C200PB 1602a 1602-A
Contextual Info: DSEC 16-02A HiPerFREDTM Epitaxial Diode IFAV = 2x8 A VRRM = 200 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V V 200 200 A Type C A TO-220 AB DSEC 16-02A A C A C TAB D4 A = Anode, C = Cathode, TAB = Cathode Maximum Ratings IFRMS IFAVM IFRM

2x15

Contextual Info: DSSK 30-0045B IFAV VRRM VF Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A = 2x15 A = 45 V = 0.42 V TO-247 AD A C DSSK 30-0045B A C TAB Conditions Maximum Ratings IFRMS IFAV IFAV TC = 135°C; rectangular, d = 0.5 TC = 135°C; rectangular, d = 0.5; per device

DPG30I300PA

Contextual Info: DSS 16-0045B IFAV = 16 A VRRM = 45 V VF = 0.44 V Power Schottky Rectifier VRSM VRRM V V 45 45 Type A C TO-220 AC C C TAB A DSS 16-0045B Conditions Maximum Ratings IFRMS IFAV TC = 130°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS

DSB30C60PB

Contextual Info: DSSK 28-006B DSSK 28-006BS IFAV = 2x15 A VRRM = 60 V VF = 0.52 V Power Schottky Rectifier with common cathode VRSM VRRM V V 60 60 60 60 A Type C A TO-220 AB B-Type A C A DSSK 28-006B DSSK 28-006BS C (TAB) C (TAB) A A Symbol Conditions IFRMS IFAV IFAV TC = 135°C; rectangular, d = 0.5

dph30is600hi

Abstract: 2X3506C
Contextual Info: DSEP 2x35-06C HiPerDynFREDTM Epitaxial Diode IFAV = 2x35 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRRM V V 600 600 SOT-227 B, miniBLOC Type DSEP 2x 35-06C Test Conditions Maximum Ratings IFRMS IFAVM IFRM TC = 100°C; rectangular, d = 0.5

Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ① IFRM