200WPEP Search Results

200WPEP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF161 150MHz 30MHz, 150MHz, MRF151
VK200-4B Abstract: No abstract text available Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF161 150MHz 30MHz, 150MHz, MRF151 VK200-4B
2SC2652 Abstract: No abstract text available Text: SILICO N NPN EPITAXIAL PLA N A R T Y P E 2SC2652 2 '3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Unit in m m FEATURES_ . S p e c i f i e d 50V, 2 8 M H z C h a r a c t e r i s t i c s : Output Power : Po=200WpEP : Mi nimu m Gain : Gpe=13dB	OCR Scan	PDF	2SC2652 200WpEP 150WpeP, 28MHz 28MHz 200Wp 150pF 022AF 2SC2652
2sc2652 Abstract: No abstract text available Text: TOSHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.)	OCR Scan	PDF	2SC2652 28MHz 200WpEP 961001EAA2' 2sc2652
2sc2652 Abstract: 50WV 10ID 1S1555 2-13B1A Text: TO SHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 6 52 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Po = 200WpEp Output Power Power Gain Gp = 13dB (Min.)	OCR Scan	PDF	2SC2652 30MHz 28MHz 200Wpep 000MHz 001MHz 100mA 961001EAA2' 2sc2652 50WV 10ID 1S1555 2-13B1A
2sc2652 Abstract: 2-13B1A 200WPEP Text: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency	OCR Scan	PDF	2SC2652 30MHz 28MHz 200WpEP --30dB 2-13B1A 100mA, 1S1555 961001EAA2' 2sc2652
2SC2652 Abstract: 10ID 1S1555 50WV Text: T O S H IB A 2SC2652 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Unit in mm Specified 50V, 28MHz Characteristics Po = 200Wpj]p Output Power Power Gain Gp = 13dB (Min.)	OCR Scan	PDF	2SC2652 30MHz 28MHz 200Wpep 100mA 961001EAA2' 10ID 1S1555 50WV