200A 55V Search Results

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Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V IXTP200N055T2 IXTA200N055T2
Contextual Info: TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: TrenchT2TM Power MOSFET VDSS ID25 IXTA200N055T2 IXTP200N055T2 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA200N055T2-7 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTA200N055T2-7

Abstract: IXTA200N055T2 200N055
Contextual Info: Preliminary Technical Information IXTA200N055T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTN550N055T2

Abstract: DS100173A IXYS IXTN550N055T2
Contextual Info: Preliminary Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

IXTN550N055T2

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN550N055T2 = = 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTZ550N055T2 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 D D D Symbol Test Conditions Maximum Ratings

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Abstract: IXTZ550N055T2
Contextual Info: Advance Technical Information IXTZ550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 Symbol Test Conditions VDSS TJ = 25°C to 175°C

IXTK550N055T2

Abstract: IXTX550N055T2 PLUS247
Contextual Info: Advance Technical Information IXTK550N055T2 IXTX550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.6mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTK550N055T2 IXTX550N055T2 = = 55V 550A Ω 1.6mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Advance Technical Information TrenchT2TM Power MOSFET IXTV270N055T2 IXTV270N055T2S VDSS ID25 = 55V = 270A Ω ≤ 3.0mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C

IXTN550N055T2

Contextual Info: Advance Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C

IXTA260N055T2

Abstract: IXTP260N055T2 ixtp260
Contextual Info: TrenchT2TM Power MOSFET IXTA260N055T2 IXTP260N055T2 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

RDS-2S1AB-D 28V

Contextual Info: TrenchT2TM Power MOSFET IXTA260N055T2 IXTP260N055T2 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2 IXTP260N055T2 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55

Contextual Info: Advance Technical Information IXTH360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR

IXTH260N055T2

Contextual Info: Preliminary Technical Information IXTH260N055T2 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH360N055T2 IXTT360N055T2 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

IXTH360N055T2

Abstract: IXTT360N055T2 S20NF
Contextual Info: Preliminary Technical Information IXTH360N055T2 IXTT360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

Sony SMD fuse

Abstract: Amp. mosfet 1000 watt P4KE 4000 CA Varistor 271 E321567 triac 200A 271 Ceramic Disc Capacitors metal rectifier diode 220 amp 1200 volts varistor UL1414 Y1 3.5v zenar
Contextual Info: WPI Metal Oxide Environmental Varistor EV Series UL1449 3rd Edition Recognized Disk Diameter Peak Current, 8/20ms Amps 5mm 125, 250, 500, 800 11, 14, 17, 20, 25, 30, 35, 40, 50, 60, 75, 95, 120, 130, 140, 150, 180, 195, 210, 230, 250, 275, 300, 320, 360

MOV150

Abstract: Amp. mosfet 1000 watt K 250 VARISTOR 1.5ke series varistor 7 k 470 TVS AE SMA catalog mosfet Transistor smd en132400 275v SLP2510P8 radial capacitor 160V
Contextual Info: WPI Metal Oxide Environmental Varistor EV Series UL1449 3rd Edition Recognized Disk Diameter Peak Current, 8/20ms Amps 5mm 125, 250, 500, 800 11, 14, 17, 20, 25, 30, 35, 40, 50, 60, 75, 95, 120, 130, 140, 150, 180, 195, 210, 230, 250, 275, 300, 320, 360

varistor 565-1

Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
Contextual Info: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680

IXTH440N055T2

Abstract: IXTT440N055T2 440a
Contextual Info: Advance Technical Information IXTH440N055T2 IXTT440N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Advance Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH440N055T2 IXTT440N055T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ