DO-205AB
Abstract: No abstract text available
Text: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics
|
Original
|
PDF
|
I2064
SD203N/R
DO-205AB
SD203N/R
12-Mar-07
DO-205AB
|
Untitled
Abstract: No abstract text available
Text: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics
|
Original
|
PDF
|
I2064
SD203N/R
DO-205AB
SD203N/R
000V/
D203N/
|
Untitled
Abstract: No abstract text available
Text: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics
|
Original
|
PDF
|
I2064
SD203N/R
DO-205AB
SD203N/R
08-Mar-07
|
DO-205AB
Abstract: S10 diode
Text: Bulletin I2064 rev. A 09/94 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 200A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics
|
Original
|
PDF
|
I2064
SD203N/R
DO-205AB
SD203N/R
SD203N/R.
DO-205AB
S10 diode
|
DO-205AB, DO-9
Abstract: ka s15 DO-205AB 25S20 DO205AB stud diode 200A
Text: Previous Datasheet Index Next Data Sheet Bulletin I2064/A SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 200A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics
|
Original
|
PDF
|
I2064/A
SD203N/R
DO-205AB
SD203N/R
-16UNF-2A*
DO-205AB, DO-9
ka s15
DO-205AB
25S20
DO205AB
stud diode 200A
|
Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.
|
Original
|
PDF
|
DSF11060SG
DS4217-2
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
|
Untitled
Abstract: No abstract text available
Text: JANUARY 1996 DSF21545SV DS4153-3.0 DSF21545SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.
|
Original
|
PDF
|
DSF21545SV
DS4153-3
0000A
DSF21545SV
DG858BW
DSF21545SV45
|
Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1995 DF685 DS4303-1.2 DF685 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.
|
Original
|
PDF
|
DF685
DS4303-1
DF685
M779b.
|
DSF11060SG
Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
|
Original
|
PDF
|
DSF11060SG
DS4217-3
DS4548-4
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
DSF11060SG
1000A 100V power diode
DSF11060SG60
M779b
DSF11060SG55
DSF11060SG56
DSF11060SG58
DS4548
|
FMBL1G200US60
Abstract: GE power transistor list
Text: IGBT FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
|
Original
|
PDF
|
FMBL1G200US60
E209204
FMBL1G200US60
GE power transistor list
|
FM2G200US60
Abstract: No abstract text available
Text: IGBT FM2G200US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is
|
Original
|
PDF
|
FM2G200US60
FM2G200US60
|
1000A 100V power diode
Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
|
Original
|
PDF
|
DSF11060SG
DS4217-2
DS4548
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
1000A 100V power diode
DSF11060SG
DSF11060SG55
DSF11060SG56
DSF11060SG58
DSF11060SG60
|
FM2G200US60
Abstract: No abstract text available
Text: FM2G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
|
Original
|
PDF
|
FM2G200US60
E209204
FM2G200US60
|
dc to dc buck converter 200A
Abstract: SMBH1G200US60
Text: Preliminary SMBH1G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Buck(Step Down) Converter
|
Original
|
PDF
|
SMBH1G200US60
dc to dc buck converter 200A
SMBH1G200US60
|
|
|
Untitled
Abstract: No abstract text available
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
|
Original
|
PDF
|
DSF11060SG
DS4217-3
DS4548-4
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
|
300V dc dc boost converter
Abstract: SMBL1G200US60
Text: Preliminary SMBL1G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter
|
Original
|
PDF
|
SMBL1G200US60
300V dc dc boost converter
SMBL1G200US60
|
dc welding machine circuit diagram
Abstract: SM2G200US60
Text: Preliminary SM2G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters
|
Original
|
PDF
|
SM2G200US60
dc welding machine circuit diagram
SM2G200US60
|
Untitled
Abstract: No abstract text available
Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP3060
RHRP3060
|
Untitled
Abstract: No abstract text available
Text: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted
|
Original
|
PDF
|
RURD660,
RURD660S
RURD660
RURD660S
|
Untitled
Abstract: No abstract text available
Text: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform
|
OCR Scan
|
PDF
|
00V/200A.
00-4000A
300-6000V
|
RCA scr package N TO-8
Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
Text: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228
|
OCR Scan
|
PDF
|
75AdPMl
S2400A
S3704A
S3714A
2N3528
S2400B
2N3228
S3700B
S3704B
S2710B
RCA scr package N TO-8
rca 2N4102
IGNITION WITH SCR
rca scr
SCR 100A
scr 2n6396
S20620
2N4102
ignition tci
|
2n3528
Abstract: rca 2N4102 scr 2n3668 2N3529 2N3525 RCA scr package N TO-8 S3703SF 2N4102 Scans-00105564 2N3228
Text: SCR Product Matrix T O -i TO -66 TO 6 6 W ith Heat Rad. ^ f ¡'3SSSL. Jw a ip | RCA SCR's N D 'T R M S •t SM (6 0 Hz) v DROM 15 v RROM 25 30 2A 4 .5 A 5A 60A 200A 60A F ro * FTO ' FTO * 5A FTO * 5A FTO * 5A 80A 5A 5A FTO * 5A 5A 5A 80A 80A 7 5 A * I PM)
|
OCR Scan
|
PDF
|
75AdPMl
S2400A
S3704A
S3714A
2N3528
S2400B
2N3228
S3700B
S3704B
S2710B
rca 2N4102
scr 2n3668
2N3529
2N3525
RCA scr package N TO-8
S3703SF
2N4102
Scans-00105564
2N3228
|
2n3528
Abstract: S2800D scr 2n6396 2N6396 2N4103 S2060D S2600M 2N3228 2N3529 S2400A
Text: SCR Product Matrix T O -i TO -66 TO 6 6 W ith Heat Rad. ^ f ¡'3SSSL. Jw a ip | RCA SCR's N D 'T R M S •t SM (6 0 Hz) v DROM 15 v RROM 25 30 2A 4 .5 A 5A 60A 200A 60A F ro * FTO ' FTO * 5A FTO * 5A FTO * 5A 80A 5A 5A FTO * 5A 5A 5A 80A 80A 7 5 A * I PM)
|
OCR Scan
|
PDF
|
75AdPMl
S2400A
S3704A
S3714A
2N3528
S2400B
2N3228
S3700B
S3704B
S2710B
S2800D
scr 2n6396
2N6396
2N4103
S2060D
S2600M
2N3228
2N3529
S2400A
|
USD1120
Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A
|
OCR Scan
|
PDF
|
DO-41
O-220AC
O-247
USD820
1N5817
1N5818
USD1120
USD1130
USD620
USD720
USD1120
USD1130
L5a 12v 30a
unitrode 1n5806
USD1120 UNITRODE
150A 100V gto
UT347
USD1140
T0447
SES5702
|
