200A GTO Search Results

Contextual Info: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform­

DO-205AB

Contextual Info: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics

Contextual Info: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics

Contextual Info: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics

DO-205AB

Abstract: S10 diode
Contextual Info: Bulletin I2064 rev. A 09/94 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 200A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics

DO-205AB, DO-9

Abstract: ka s15 DO-205AB 25S20 DO205AB stud diode 200A
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2064/A SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 200A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics

RCA scr package N TO-8

Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
Contextual Info: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228

2n3528

Abstract: rca 2N4102 scr 2n3668 2N3529 2N3525 RCA scr package N TO-8 S3703SF 2N4102 Scans-00105564 2N3228
Contextual Info: SCR Product Matrix T O -i TO -66 TO 6 6 W ith Heat Rad. ^ f ¡'3SSSL. Jw a ip | RCA SCR's N D 'T R M S •t SM (6 0 Hz) v DROM 15 v RROM 25 30 2A 4 .5 A 5A 60A 200A 60A F ro * FTO ' FTO * 5A FTO * 5A FTO * 5A 80A 5A 5A FTO * 5A 5A 5A 80A 80A 7 5 A * I PM)

2n3528

Abstract: S2800D scr 2n6396 2N6396 2N4103 S2060D S2600M 2N3228 2N3529 S2400A
Contextual Info: SCR Product Matrix T O -i TO -66 TO 6 6 W ith Heat Rad. ^ f ¡'3SSSL. Jw a ip | RCA SCR's N D 'T R M S •t SM (6 0 Hz) v DROM 15 v RROM 25 30 2A 4 .5 A 5A 60A 200A 60A F ro * FTO ' FTO * 5A FTO * 5A FTO * 5A 80A 5A 5A FTO * 5A 5A 5A 80A 80A 7 5 A * I PM)

Contextual Info: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A

Contextual Info: JANUARY 1996 DSF21545SV DS4153-3.0 DSF21545SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.

Contextual Info: SEPTEMBER 1995 DF685 DS4303-1.2 DF685 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.

DSF11060SG

Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

FM2G200US60

Contextual Info: IGBT FM2G200US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is

1000A 100V power diode

Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

FM2G200US60

Contextual Info: FM2G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

dc to dc buck converter 200A

Abstract: SMBH1G200US60
Contextual Info: Preliminary SMBH1G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Buck(Step Down) Converter

1000A 100V power diode

Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

300V dc dc boost converter

Abstract: SMBL1G200US60
Contextual Info: Preliminary SMBL1G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter

dc welding machine circuit diagram

Abstract: SM2G200US60
Contextual Info: Preliminary SM2G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters

Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted