200A GTO PRELIMINARY Search Results

Contextual Info: Preliminary SMBL1G200US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-BA • Boost(Step Up) Converter

Contextual Info: Preliminary SMBH1G200US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-BA • Buck(Step Down) Converter

Contextual Info: Preliminary SM2G200US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-BA

Contextual Info: Preliminary FFPF20UP30S Ultrafast Recovery Power Rectifier FFPF20UP30S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF=20A • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction

Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

TA49063

Abstract: RHRP3060
Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

RURP8100CC

Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted

RHR8100C

Abstract: RHRP8100CC
Contextual Info: RHRP8100CC Data Sheet Title HR 100 bt A, 00V pert al ode) utho rpoon, minctor, ache erg ted, itch wer pes, wer File Number 3965.2 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns). It has half the recovery

RHR8100C

Abstract: RHRP8100CC
Contextual Info: RHRP8100CC Data Sheet January 2002 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURU150120

Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

UR4120

Abstract: TA49036 RURD4120 RURD4120S RURD4120S9A
Contextual Info: RURD4120, RURD4120S Data Sheet Title UR 120, RD 20S bt A, 00V rafa odes utho eyrds A, 00V rafa wer pes, wer File Number 3641.3 4A, 1200V Ultrafast Diodes Features The RURD4120 and RURD4120S are ultrafast diodes with soft recovery characteristics trr < 70ns). They have low

RUR660

Abstract: RURD660S RURD660 RURD660S9A TO-251 fairchild
Contextual Info: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

HR6120

Abstract: RHRD6120 RHRD6120S RHRD6120S9A TA49058
Contextual Info: RHRD6120, RHRD6120S Data Sheet Title HR 120, HRD 20S bt A, 00V pert odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with

RHRP8120

Abstract: rhrp8120 diode TA49096
Contextual Info: RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode Features The RHRP8120 is a hyperfast diodes with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RHR8120C

Abstract: RHRP8120CC TA49096
Contextual Info: RHRP8120CC Data Sheet January 2002 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

RURP6120CC

Contextual Info: RURP6120CC 6A, 1200V Ultrafast Dual Diode January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC ANODE 2 CATHODE ANODE 1

RURU150120

Contextual Info: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RHRP840, RHRP860 Data Sheet January 2002 8A, 400V - 600V Hyperfast Diodes Features The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

RHRG7560

Contextual Info: RHRG7560 Data Sheet January 2000 File Number 3944.2 75A, 600V Hyperfast Diode Features The RHRG7560 is a hyperfast diode with soft recovery • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns Title characteristics trr < 55ns . It has half the recovery time of

RHR8120C

Abstract: RHRP8120CC TA49096
Contextual Info: RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features Title HRP 20C The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RHRP840CC

Abstract: RHRP860C RHRP860CC hrp 100
Contextual Info: RHRP840CC, RHRP860CC Data Sheet Title HRP 0CC HRP 0CC bt A, 0V 0V pert al odes January 2000 File Number 3964.2 8A, 400V - 600V Hyperfast Dual Diodes Features The RHRP840CC and RHRP860CC are hyperfast dual diodes with soft recovery characteristics trr < 30ns . They

RUR660

Abstract: RURD660S RURD660 RURD660S9A
Contextual Info: RURD660, RURD660S Data Sheet Title UR 60, RD 0S bt A, 0V rafa odes utho eyrds A, 0V rafa January 2000 wer pes, wer itch 3750.2 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns). They have low forward

Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride