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    200A MOSFET Search Results

    200A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK401G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    200A MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sk2365

    Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
    Contextual Info: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A


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    2SK2983-ZJ 2SK2984-ZJ 2SK3056-ZJ 2SK2411-ZJ 2SK2513-ZJ 2SK2499-ZJ 2SK3058-ZJ 2SK3060-ZJ 2SK3062-ZJ 2SJ302-ZJ 2sk2365 MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 PHB24N03LT 2SJ328 PDF

    Contextual Info: STV270N4F3 N-channel 40V - 1.25mΩ - 200A - PowerSO-10 STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on ID (1) STV270N4F3 40V < 1.5mΩ 200A 10 1. Current limited by package 1 • Conduction losses reduced ■ Low profile, very low parasitic inductance


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    STV270N4F3 PowerSO-10 PDF

    "MOSFET Module"

    Abstract: E80276 FM400TU-3A mitsubishi MOSFET
    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


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    FM400TU-3A E80276 E80271 "MOSFET Module" E80276 FM400TU-3A mitsubishi MOSFET PDF

    DIODE T25 4

    Abstract: DIODE T25 FM400TU E80276 FM400TU-3A
    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


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    FM400TU-3A E80276 E80271 19K/W DIODE T25 4 DIODE T25 FM400TU E80276 FM400TU-3A PDF

    DIODE T25

    Abstract: DIODE T25 4 DIODE T25 4 do E80276 FM400TU-07A
    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


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    FM400TU-07A E80276 E80271 19K/W DIODE T25 DIODE T25 4 DIODE T25 4 do E80276 FM400TU-07A PDF

    "MOSFET Module"

    Abstract: E80276 FM400TU-07A 48V battery forklift
    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


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    FM400TU-07A E80276 E80271 "MOSFET Module" E80276 FM400TU-07A 48V battery forklift PDF

    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


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    FM400TU-07A E80276 E80271 19K/W PDF

    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


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    FM400TU-2A E80276 E80271 19K/W PDF

    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


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    FM400TU-3A E323585 March-2013 PDF

    MOSFET 200A 24V

    Abstract: E80276 FM400TU-2A mitsubishi MOSFET N mosfet 100v 200A
    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


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    FM400TU-2A E80276 E80271 MOSFET 200A 24V E80276 FM400TU-2A mitsubishi MOSFET N mosfet 100v 200A PDF

    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


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    FM400TU-3A E80276 E80271 19K/W PDF

    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


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    FM400TU-07A E323585 March-2013 PDF

    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


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    FM400TU-2A E323585 11ubishi March-2013 PDF

    DIODE T25

    Abstract: N mosfet 100v 200A "MOSFET Module" E80276 FM400TU-2A
    Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


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    FM400TU-2A E80276 E80271 19K/W DIODE T25 N mosfet 100v 200A "MOSFET Module" E80276 FM400TU-2A PDF

    200n60

    Abstract: u265 IXGM200N60 200N60A
    Contextual Info: v* CES HiPerFAST IGBT IC25 j vw C E sat t IXGN 200N60 600V 200A f 2.5 V 1350 ns IXGN 200N60A 600V 200A i 2.7 V 200 ns Symbol Maximum Ratings Test C onditions miniBLOC, SOT-227 B TO V CES T j =2 5°C to 150°C 600 V V CGR T,J = 25cC to 15 0°C; Rtab „ = 1 MQ


    OCR Scan
    200N60 200N60A OT-227 E153432 u265 IXGM200N60 PDF

    Module

    Abstract: 2-PACK FM200CD1D5B
    Contextual Info: SEMICONDUCTOR FM200CD1D5B TECHNICAL DATA 150V / 200A 2-PACK MOSFET MODULE Common-Drain FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Battery Management System ・Electric Vehicle OUTLINE DRAWING


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    FM200CD1D5B -100A/us Module 2-PACK FM200CD1D5B PDF

    Module

    Abstract: FM200HB1D5B
    Contextual Info: SEMICONDUCTOR FM200HB1D5B TECHNICAL DATA 150V / 200A 2 - PACK MOSFET MODULE Half - Bridge FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Motor control ・Battery management system OUTLINE DRAWING


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    FM200HB1D5B -100A/us Module FM200HB1D5B PDF

    N mosfet 250v 600A

    Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
    Contextual Info: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •


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    QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet QJQ0220001 mosfet low idss PDF

    IXTK200N10L2

    Abstract: IXTX200N10L2 PLUS247 ixtk200n
    Contextual Info: Advance Technical Information IXTK200N10L2 IXTX200N10L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 100V = 200A Ω < 11mΩ RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS


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    IXTK200N10L2 IXTX200N10L2 O-264 100ms 200N10L2 IXTK200N10L2 IXTX200N10L2 PLUS247 ixtk200n PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


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    UTT200N03 UTT200N03 UTT200N03L-TA3-T UTT200N03G-TA3-T UTT200N03L-TQ2-T UTT200N03G-TQ2-T UTT200N03L-TQ2-R UTT200N03G-TQ2-R QW-R502-758 PDF

    Contextual Info: AP99T03GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Ultra-low On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 30V 2.5m 200A S Description


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    AP99T03GP-HF O-220 100us 100ms PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Preliminary Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


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    UTT200N03 UTT200N03 O-220 UTT200N03L-TA3-T UTT200N03G-TA3-T QW-R502-758 PDF

    Contextual Info: 30-F206NBA200SA-M295L33 preliminary datasheet flowBOOST2 600V/200A Features flowBOOST2 ● High power flow2 housing ● Thyristors for inrush current limitation ● Low inductive layout Target Applications Schematic ● UPS Types ● 30-F206NBA200SA-M295L33


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    30-F206NBA200SA-M295L33 00V/200A PDF

    Contextual Info: TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor TRANSZorb Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only


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    TGL41-6 TGL41-200A J-STD-020, DO-213AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF