200A4IS Search Results

BYT200PIV-400

Contextual Info: BYT200PIV-400 _ ULTRAFAST POWER RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS I f a v 2x100 A V rrm 400 V V f (max) 1.4 V FEATURES AND BENEFITS • LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ HIGH AVALANCHE CAPABILITY ■ ISOLATED PACKAGE:

C1030 transistor

Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Contextual Info: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses

C975 transistor

Contextual Info: brtemational [ÎÔR]Rectifier PD - 5.034 CPV363MK IGBT SIP MODULE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated - 10|js @ 125°C, V ge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

ITE35C12

Abstract: ITE35F12
Contextual Info: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: PD-2.446 bïtemational S Rectifier HFA140NH60R HEXFREDT Ultrafast, Soft Recovëry Diode LUG TERM INAL CATHO DE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Vr 600V = Vf = 1.6V A i Qrr * = 1400nC

RHR8120C

Abstract: diode T B 8A
Contextual Info: RHRP8120CC ff HARRIS S E M I C O N D U C T O R 8A, 1200V Hyperfast Dual Diode April 1995 Features Package • Hyperfast with Soft Recovery.<55ns JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 • Operating Temperature. +175°C