200N15N Search Results

200N15N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
200N15N Abstract: ipd200n15n3 IEC61249-2-21 IPP200N15N3 PG-TO220-3 Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 150 V • N-channel, normal level R DS on ,max 20 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 50 A • Very low on-resistance R DS(on)	Original	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3 200N15N IEC61249-2-21 PG-TO220-3	PDF
Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor 200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 20 mW ID 50 A • Very low on-resistance R DS(on)	Original	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3	PDF
200N15N3 Abstract: 200N15N IPD200N15N3 ipp200n15n3 IPD200N15N3 G Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor 200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max 20 mΩ ID 50 A • Very low on-resistance R DS(on)	Original	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 PG-TO263-3 200N15N3 200N15N3 200N15N IPD200N15N3 G	PDF
200n15n Abstract: IPD200N15N3 IPP200N15N3 G ipp200n15n3 Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor 200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max 20 mΩ ID 50 A • Very low on-resistance R DS(on)	Original	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 PG-TO263-3 200N15N 200n15n IPP200N15N3 G	PDF
200n15n Abstract: ipd200n15n3 IPP200N15N3 PG-TO220-3 PG-TO262-3 200N1 Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor 200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max 20 mΩ ID 50 A • Very low on-resistance R DS(on)	Original	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 PG-TO263-3 PG-TO252-3 200n15n PG-TO220-3 PG-TO262-3 200N1	PDF
200N15N Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor 200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 20 mW ID 50 A • Very low on-resistance R DS(on)	Original	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3 200N15N	PDF