200RN Search Results
200RN Price and Stock
Ohmite Mfg Co APC1206B200RN1/8 WATTS PRECISION CHIP 200 OHM |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APC1206B200RN | Cut Tape | 4,943 | 1 |
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APC1206B200RN | 1,004 |
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APC1206B200RN | Bulk | 5,000 |
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APC1206B200RN | 5,000 |
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APC1206B200RN |
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Quectel Wireless Solutions Co Ltd SC200RNANA-E51-UGNDARF TXRX MOD BT NAV WIFISMD |
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SC200RNANA-E51-UGNDA | Cut Tape | 84 | 1 |
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SC200RNANA-E51-UGNDA | Reel | 16 Weeks | 3,000 |
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Rochester Electronics LLC BLF6G10LS-200RN:11RF MOSFET LDMOS 28V SOT502B |
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BLF6G10LS-200RN:11 | Bulk | 48 | 4 |
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Metcal SP200-RNKITSP HANDPIECE AND SLEEPER STAND K |
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SP200-RNKIT | Box | 1 | 1 |
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SP200-RNKIT |
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SP200-RNKIT | Bulk | 1 |
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SP200-RNKIT |
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SP200-RNKIT |
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Mersen Electrical Power A6D200RN600V 200A RK1 TD FUSE NON IND |
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A6D200RN | Bulk | 1 |
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200RN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1n3600
Abstract: 1N4150 1n3600 chip
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200rnA 1N3600; 1N4150; 1N4150 1N4150-1 MIL-S-19500/231 DO-35 Cur70 1n3600 1n3600 chip | |
BLF6G10LS-200RN
Abstract: BLF6G10-200RN RF35 A1118
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BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 A1118 | |
BLF6G10-200RN
Abstract: BLF6G10LS-200RN RF35 vj1206y224kxb
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BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 vj1206y224kxb | |
Contextual Info: BLF6G05LS-200RN Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. |
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BLF6G05LS-200RN | |
Contextual Info: BLF6G05LS-200RN Power LDMOS transistor Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance |
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BLF6G05LS-200RN | |
Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance |
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BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN | |
AD1317
Abstract: AD1317KZ ADI317
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AD1317 AD1317 200mV/NA ADI317 1470pF 470pF 470pF AD1317KZ | |
mj15052
Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
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AN930 AN930/D hull111111 mj15052 mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032 | |
Contextual Info: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win. |
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AD532D
Abstract: AD532H AD530 ADS30 ADS32 AD532 AD532J AD532K AD532S gilbert cell sum
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AD532K) AD532 Y2/10. AD532D AD532H AD530 ADS30 ADS32 AD532J AD532K AD532S gilbert cell sum | |
Contextual Info: LM224/A, LM324/A, LM2902 LINEAR INTEGRATED CIRCUIT QUAD OPERATIONAL AMPLIFIERS The LM224 series c o n s is ts o f fo u r independent, high gain, inte rnally frequency com pensated operational am p lifie rs w hich were designed s p e c ific a lly to operate from a sin g le pow er s u p p ly over a w ide voltage |
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LM224/A, LM324/A, LM2902 LM224 1000H | |
MX536AJCWEContextual Info: y n y j x i y n 7Yue RMS-to-DC Converter _General Description _ _Features The MX536A and MX636 are true RMS-to-DC con verters. They feature low power and are designed to accept low level input signals from 0 to 7Vtros for the |
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MX536A MX636 200mVrm MX636. MX536A) 100mV MX636) MX636KN MX636KQ* MX536AJCWE | |
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IS S U E 3 - F E B R U A R Y 1995 FZT655 O m FEATURES * Low saturation voltage C O M P L E M E N T A R Y TY PE - FZT755 P A R T M A R K IN G D ET A IL - FZT655 B ABSOLUTE M A X IM U M RATINGS. SY M B O L |
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OT223 FZT655 FZT755 500mA, 200rnA* 20MHz 300ns. 170S7B | |
100ria
Abstract: 25V6K RN5305 2N4494
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2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494 | |
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hp 530 charging CIRCUIT diagramContextual Info: r r u r m TECHNOLOGY _ LTC1479 PowerPath C ontroller fo r Dual B attery Systems F€flTUft€S DCSCRICTIOn • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup ■ Compatible with Li-Ion, NiCd, NiMH and Lead-Acid |
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LTC1479 36-Lead LTC1538-AUX LT1620 LTC1435 LT1621 S51fl4bà OD177T7 434-0507-TELEX: 1479f hp 530 charging CIRCUIT diagram | |
MX536AJCWEContextual Info: ykiyjxiyki 19-0824; Rev 1; 6/93 True RMS-to-DC Converter The MX536A and MX636 are true R M S -to-D C co n verters. T hey feature low pow er and are designed to a cce p t low level in p u t signals from 0 to 7Vrms fo r the MX536A and 0 to 200m Vrms fo r the MX636. Both |
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MX536A MX636 MX636. MX536AJCWE | |
Contextual Info: HV21 S u p e r te x in c. 8-Channel High Voltage Analog Switch Ordering Information Package Options z z Q. CL > I > 24-pin ceramic* side-brazed DIP Die In waffle pack 24-pin plastic DIP 28-lead plastic chip carrier 140 V HV2114C HV2114X HV2114P HV2114PJ 160 V |
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24-pin HV2114C HV2116C HV2114X HV2116X HV2114P HV2116P 28-lead HV2114PJ | |
UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
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CFW450
Abstract: S695 diode V4748 TUA4300P S695 Rectifier N4748 S695 csb456 AM2 Siemens metal detector diagram PI
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V66047-S695-A100-Z1 fl23SbOS DD6D723 V66047-S695-A30Q-V1_ CFW450 S695 diode V4748 TUA4300P S695 Rectifier N4748 S695 csb456 AM2 Siemens metal detector diagram PI | |
Contextual Info: HV22 Supertex inc. 8-Channel High Voltage Analog Switch Ordering Information_ Package Options V PP - V NN Die in waffle pack 28-pin plastic DIP 28-lead plastic chip carrier HV2216X HV2216P HV2216PJ 160V General Description Features |
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28-pin 28-lead HV2216X HV2216P HV2216PJ HV202/203 HV204/205/206. 10MHz 28-pin | |
toko reel packaging SOT23
Abstract: diagram transistor tt 2140 internal diagram of ic 4017 toko reel packaging diode toko packaging specification SOT23 TOKO Packaging diode internal structure of ic 4017 tip 2905 transistor
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DB4-K012 toko reel packaging SOT23 diagram transistor tt 2140 internal diagram of ic 4017 toko reel packaging diode toko packaging specification SOT23 TOKO Packaging diode internal structure of ic 4017 tip 2905 transistor | |
MX536AJN
Abstract: TRUE RMS-TO-DC CONVERTER MX536AJCWE MX536AKCWE MX536A MX536AJD MX536AJH MX536AJQ MX536AKD MX636
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MX536A MX636 200mVrms MX636. MX536AJN TRUE RMS-TO-DC CONVERTER MX536AJCWE MX536AKCWE MX536AJD MX536AJH MX536AJQ MX536AKD | |
neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
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10kHz 13kHz 2x10kHz-19kHz 3x13kHz-38kHz 57kHz V66047-S695-G100-G1 fl235b05 D137bbfl neosid v6 OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D | |
2N1103
Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
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buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155 |