200TN Search Results

RD7A

Abstract: RD9A diode yz 088 1N736 RD24A RD11A 1N703 diode 1N706 RD13A 1N724
Contextual Info: • 3541563 FENWAL 83 D 00903 E L E C T R O N I C S / APD ~Û3 ZENER DIODES DE I 3Sm St3 D T -,//- Q GOOCH0 3 □ DO-35 Case 200tnW American Power Devices offers a complete line of quality industrial, com­ mercial and military silicon regulators and temperature-compensated ref­

ZENER GZA

Abstract: GZA 22 GZB10 ZENER DIODES DZ 7 "Zener Diodes" sanyo
Contextual Info: Quick Guide To Zen r Diodes S A flm Sanyo has a wide v a ri e t y of zener diodes with 200tnw~lw of allowable power di ss i pat ion. moreover, CP package for surface mounting is provided. _ G Z B Series D Z B Series

DFDH2012T900S

Abstract: LPC 815 LG F11YT1 HAT2180RP G402R P06KE GP03S ara cd 100 39p LPC TPM 0603FT
Contextual Info: 1-fid e n tic i Iw in iie a u Model : F11YT1 R:0 Intel Yonah ULV+Calistoga 945GM+ICH7-M Revision History ORIGINAL RELEASE A B 2006/01/12 Rev:B release. c 2006/03/17 R e v :C release. 2006/03/31 R e v :0 release. PCB STA C K U P LAY1 LAY2 LAY3 LAY4 LAY5

LTI202FTN

Abstract: LTI202TN LTI202UFTN LTI206FTN LTI206TN LTI206UFTN LTI210FTN LTI210TN LTI210UFTN
Contextual Info: LTI202TN - LTI210TN LTI202FTN - LTI210FTN LTI202UFTN-LTI210UFTN 200 V - 1,000 V Negative Center Tap 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified

Contextual Info: A514A12 0020CHA 7A4 A COMPANY TYPE 197D Solid Tantalum Capacitors OF SPRAGUE Y Solid-Electrolyte T a n t a l e x C apacitors T r ip o l e ® , Triple-Lead, Molded Case Designed for high frequency power supply filtering applications, molded radial-lead Sprague®

Contextual Info: INT EG RAT ED DEVICE T7 dË J 482577 1 INTEGRATED DEVICE MÖHS771 ODOSÖDÜ 4 97D 0 2800 T -4 6 -2 3 -1 4 Integrated DeviceTechnology Inc. 128K x 8 SRAM WITH REGISTERED IDT7M826 ADDRESS LINES, REGISTERED DATA.m LINES AND LATCHED/BUFFERED DATA0UT LINES 53

CY7C425

Abstract: CY7C420 CY7C429-30DC CY7C42I-25JI CY7C421-40DC CY7C421 CY7C429 IDT7201 IDT7203 CY7C429-30PC
Contextual Info: 4bE D CYPRESS SSflTbbS □007117 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs • Pin compatible and functional

MA1043

Abstract: MA1024 MA1047 MA1Z062 MA1Z068 MA1Z075 MA1Z082 MA1Z091 MA1Z120 MA1Z130
Contextual Info: - 238 y tt * MA1Z056 MA1Z062 MA1Z068 MA1Z075 MA1Z082 £ p Iz <nf ÎBlA) Vz V) min 5mV/°C 4îbV/0C lmV/°C 8mV/°C 5mV/°C 10 10 10 10 10 5. 6. 7. 8. 9. 4mV/°C 3mV/°C 4mV/°C 4mV/°C 4mV/°C 10 10 10 10 10 30 30 30 30 30 10 10 10 10 10 11. 12. 14. 16.

TA8415

Contextual Info: TA8415P STEPPING MOTOR CONTROLLER/DRIVER T A 8 4 1 5 P is g e n e r a l p u r p o s e u n i p o l a r s t e p p i n g m o t o r c o n t r o l l e r / d r i v e r , a p p l i c a b l e to 3/4 p h a s e m o t o r s a n d 1, 1-2, 2 p h a s e e x c i t a t i o n d r i v e by i n it ial

2SA510

Abstract: 2SA512
Contextual Info: TOSHIBA {DI SC RE TE /O PT O} 2 S A 5 1 2 S A 5 1 2 9097250 TOSHIBA Sh ' DE 1 ^ 7 2 5 0 0007224 SILICON PNP EPIT AXIA L TYPE PCT PROCESS 5b'C (DISCRETE/OPTO) 07224 1 )7 *3 0 -1 5 INDUSTRIAL APPLICATIONS U n i t in m m HIGH FREQUENCY AMPLIFIER APPLICATIONS.

CY7C425

Abstract: C4206 1DT7201 CY7C429-20DC CY7C420
Contextual Info: 4b E D CYPRESS SSflTbbS □ 0 0 7 1 1 7 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs

MA1033

Abstract: MA2Z200 MA1043 MA1Z062 MA1Z068 MA1Z075 MA1Z082 MA1Z091 MA1Z120 MA1Z130
Contextual Info: - 238- y tt * MA1Z056 MA1Z062 MA1Z068 MA1Z075 MA1Z082 £ p Iz <nf ÎBlA) Vz V) min fô T tßT tëT fôT tôT MA2Z330 MA3Z200 MA3Z240 MA1020 MA1022 fôT MA1024 MA1027 MA1030 MA1033 MA1036 MA1039 MA1043 MA1047 MA 10 51 MA10 5 6 fô “F fôT fôT fâ T fâT

CV522

Abstract: LH5164ASHN S0P40-P-6 EIA481A LH516AS8 AA9 marking
Contextual Info: SHARP 1 LH516AS8 Contents 1. Description . 2 2. Pin Configuration . 2 3. Truth Table . 3 4. Block Diagram .

MA1033

Abstract: MA1047 MA1043 MA1036 TC 30i MA1Z062 MA1Z068 MA1Z075 ma1020 MA1Z091
Contextual Info: - 238- y tt * MA1Z056 MA1Z062 MA1Z068 MA1Z075 MA1Z082 £ p Iz <nf ÎBlA) Vz V) min fô T tßT tëT fôT tôT MA2Z330 MA3Z200 MA3Z240 MA1020 MA1022 fôT MA1024 MA1027 MA1030 MA1033 MA1036 MA1039 MA1043 MA1047 MA 10 51 MA10 5 6 fô “F fôT fôT fâ T fâT

2SA5101

Abstract: 2SA510 2SA510-2SA512 2SA512 2SC510 2SA51 2SC512
Contextual Info: TOSHIBA { DI SC RETE/OPTO} 2 S A 5 1 0 1 2 S A 5 1 2 90 97250 TO SHI BA St. DE I ^ G ^ T E S O 0007224 □ | SILICON PNP EPITAXIAL TYPE PCT PROCESS 3b'C CDISCRETE/OPTO) 07224 INDUSTRIAL APPLICATIONS Unit in mm £ £ 3 9 max. HIGH FREQUENCY AMPLIFIER APPLICATIONS.