200V 100MA NPN Search Results
200V 100MA NPN Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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2SC5198 |
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NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) |
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200V 100MA NPN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ZTX855
Abstract: VCB-200V DSA003778
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ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778 | |
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSU E 2 - MARCH 94_ FE A T U R E S * 150 Volt Vc 'C E O * * * 4 Am ps continuous current Up to 10 Am ps peak current Very low saturation voltage * Ptot= 1.2 Watt |
OCR Scan |
100mA, 50MHz 100mA 300ns. ZTX855 | |
200V transistor npn 10a
Abstract: 2N3583 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN
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OCR Scan |
2N3583 2N3584 2N3585 2N3583 125mA 100mA 100mA 200V transistor npn 10a 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN | |
2n3583
Abstract: 2N3585
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2N3583 2N3584 2N3585 2N3583 CONDITI200Î 100mA 2N3585 | |
fzt855
Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
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OT223 FZT855 FZT955 100ms fzt855 100 Amp current 1000 volt diode FZT955 DSA003675 | |
200V transistor npn 10a
Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
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2N3583 2N3584 2N3585 500mA 200mA, 100mA, 200V transistor npn 10a transistor 200V 100MA NPN 200v 10a npn transistor 200V 100MA NPN | |
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE - |
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OT223 FZT855 FZT955 100ms | |
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ISSUE 2 MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. |
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ZTX855 po100 100ms | |
FZT757
Abstract: 200V 100MA NPN t6757 FZT657
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ZDT6753 ZDT6757 T6757 OT223) -10mA, -160V, -200V, -100mA, -10mA* FZT757 200V 100MA NPN t6757 FZT657 | |
complementary npn-pnp
Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
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ZDT6757 -160V, -200V, -100mA, -10mA* complementary npn-pnp complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725 | |
Contextual Info: NPN SILICON PLANAR M EDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 — IS S U E 2 - M A R C H 94. FEATURES * * 150 Volt V CE0 4 A m p s continuous current * * Up to 10 A m p s peak current Very low saturation voltage |
OCR Scan |
ZTX855 001G35S | |
ZTX415
Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
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ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c | |
NTE124
Abstract: 325V
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NTE124 NTE124 100mA 10MHz 250mA, 100mA, 10MHz, 100kHz 325V | |
2N5655
Abstract: 2N5656 2N5657 2525pF
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OCR Scan |
2N5655 2N5655 2N5656 2N5657 100mA 100mA, 250mA, 500mA, 2N5656 2N5657 2525pF | |
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Contextual Info: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA |
OCR Scan |
350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA | |
2N3738Contextual Info: 2N3738 2N3739 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739 are silicon epitaxial NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER |
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2N3738 2N3739 2N3738 2N3738) 2N3739) 250mA, 100mA | |
Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481 |
OCR Scan |
MMBT2369 BC818-16 BC818-25 BC818-40 BC848A BC848B BC848C BCW31 BCW32 BCW33 | |
Contextual Info: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage |
OCR Scan |
ZDT6757 -100mA, lc--100mA, 100mA, -10mA, 20MHz FZT757 | |
2N4298Contextual Info: 2N4296 2N4298 2N4299 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER |
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2N4296 2N4298 2N4299 2N4296, 2N4298, 2N4299 100mA 100mA, 2N4298 | |
transistor marking code 12W
Abstract: transistor marking code 12W 12 DIODES incorporated
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ZTX855 AEC-Q101 J-STD-020 ZTX855STZ ZTX855 DS33136 transistor marking code 12W transistor marking code 12W 12 DIODES incorporated | |
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps |
OCR Scan |
OT223 FZT855 FZT955 500mA* -100mA, 50MHz 1-100mA 100mA, | |
2SD1350
Abstract: 2SD1350A
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2SD1350, 2SD1350A 2SD1350 2SD1350 2SD1350A | |
2N4299
Abstract: 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN
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OCR Scan |
2N4296 2N4298 2N4299 2N4296, 2N4298, 2N4299 100mA 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN | |
Contextual Info: ZTX656 Not Recommended for New Design Please Use ZTX657 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain % |
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ZTX656 ZTX657 ZTX657 IC/10 100ms |