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    200V 100MA NPN Search Results

    200V 100MA NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    CS4200V-01L Coilcraft Inc Current Sense Transformer, 35A, ROHS COMPLIANT Visit Coilcraft Inc

    200V 100MA NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX855

    Abstract: VCB-200V DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778

    2n3583

    Abstract: 2N3585
    Text: 2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N3583 2N3584 2N3585 2N3583 CONDITI200Î 100mA 2N3585

    fzt855

    Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -


    Original     		PDF OT223 FZT855 FZT955 100ms fzt855 100 Amp current 1000 volt diode FZT955 DSA003675

    200V transistor npn 10a

    Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
    Text: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N3583 2N3584 2N3585 500mA 200mA, 100mA, 200V transistor npn 10a transistor 200V 100MA NPN 200v 10a npn transistor 200V 100MA NPN

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -


    Original     		PDF OT223 FZT855 FZT955 100ms

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ISSUE 2 – MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZTX855 po100 100ms

    FZT757

    Abstract: 200V 100MA NPN t6757 FZT657
    Text: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757


    Original     		PDF ZDT6753 ZDT6757 T6757 OT223) -10mA, -160V, -200V, -100mA, -10mA* FZT757 200V 100MA NPN t6757 FZT657

    complementary npn-pnp

    Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF ZDT6757 -160V, -200V, -100mA, -10mA* complementary npn-pnp complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725

    ZTX415

    Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


    Original     		PDF ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c

    NTE124

    Abstract: 325V
    Text: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,


    Original     		PDF NTE124 NTE124 100mA 10MHz 250mA, 100mA, 10MHz, 100kHz 325V

    transistor c 3181

    Abstract: ZTX457 200V 100MA NPN DSA003767
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX457 ISSUE 2 – MARCH 1994 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF ZTX457 100mA, 20MHz transistor c 3181 ZTX457 200V 100MA NPN DSA003767

    2N3738

    Abstract: No abstract text available
    Text: 2N3738 2N3739 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739 are silicon epitaxial NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N3738 2N3739 2N3738 2N3738) 2N3739) 250mA, 100mA

    2N4298

    Abstract: No abstract text available
    Text: 2N4296 2N4298 2N4299 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N4296 2N4298 2N4299 2N4296, 2N4298, 2N4299 100mA 100mA, 2N4298

    transistor marking code 12W

    Abstract: transistor marking code 12W 12 DIODES incorporated
    Text: A Product Line of Diodes Incorporated ZTX855 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Features • • • • • • • • Mechanical Data • • • • • BVCEO > 150V Maximum Continuous Current IC cont = 4A Up to 10A Peak Current Low Saturation Voltage


    Original     		PDF ZTX855 AEC-Q101 J-STD-020 ZTX855STZ ZTX855 DS33136 transistor marking code 12W transistor marking code 12W 12 DIODES incorporated

    Untitled

    Abstract: No abstract text available
    Text: ZTX656 Not Recommended for New Design Please Use ZTX657 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain %


    Original     		PDF ZTX656 ZTX657 ZTX657 IC/10 100ms

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSU E 2 - MARCH 94_ FE A T U R E S * 150 Volt Vc 'C E O * * * 4 Am ps continuous current Up to 10 Am ps peak current Very low saturation voltage * Ptot= 1.2 Watt


    OCR Scan     		PDF 100mA, 50MHz 100mA 300ns. ZTX855

    200V transistor npn 10a

    Abstract: 2N3583 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN
    Text: HataSheet 2N3583 2N3584 2N3585 CGVIIiu1 acniiwiiiinuwKor %iirpa NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3583 series types are Silicon NPN Transistors designed for high speed


    OCR Scan     		PDF 2N3583 2N3584 2N3585 2N3583 125mA 100mA 100mA 200V transistor npn 10a 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR M EDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 — IS S U E 2 - M A R C H 94. FEATURES * * 150 Volt V CE0 4 A m p s continuous current * * Up to 10 A m p s peak current Very low saturation voltage


    OCR Scan     		PDF ZTX855 001G35S

    2N5655

    Abstract: 2N5656 2N5657 2525pF
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5655 series types are silicon NPN plastic power transistors manufactured by the epitaxial planar process designed for horizontal driver and high voltage amplifier and switching applications. MAXIMUM RATINGS Tc=25°C unless o therwise noted


    OCR Scan     		PDF 2N5655 2N5655 2N5656 2N5657 100mA 100mA, 250mA, 500mA, 2N5656 2N5657 2525pF

    Untitled

    Abstract: No abstract text available
    Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA


    OCR Scan     		PDF 350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481


    OCR Scan     		PDF MMBT2369 BC818-16 BC818-25 BC818-40 BC848A BC848B BC848C BCW31 BCW32 BCW33

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage


    OCR Scan     		PDF ZDT6757 -100mA, lc--100mA, 100mA, -10mA, 20MHz FZT757

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps


    OCR Scan     		PDF OT223 FZT855 FZT955 500mA* -100mA, 50MHz 1-100mA 100mA,

    2N4299

    Abstract: 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN
    Text: Datasheet 2N4296 2N4298 2N4299 1 WMM Sem iconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE M anufacturers of W orld C lass D iscrete S em iconductors DESCRIPTION


    OCR Scan     		PDF 2N4296 2N4298 2N4299 2N4296, 2N4298, 2N4299 100mA 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN