200V 10A MOSFET Search Results

Contextual Info: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description

IRFP9240

Abstract: TA17522 irfp9243
Contextual Info: IRFP9240, IRFP9241, IRFP9242, IRFP9243 H a rris -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate

irfp9240

Contextual Info: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

irfp9240

Abstract: IRFP9243
Contextual Info: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate

Contextual Info: HY18N20D 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-252 • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

Contextual Info: HY18N20T 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,

Contextual Info: AP15T20GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics BVDSS RDS ON ID D RoHS Compliant & Halogen-Free 200V 250m 10A G S Description

Contextual Info: AP15T20GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics D RoHS Compliant & Halogen-Free BVDSS RDS ON ID 200V 250m 10A G S Description

Contextual Info: AP15T20GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics BVDSS RDS ON ID D RoHS Compliant & Halogen-Free 200V 250m 10A G S Description

Contextual Info: AP15T20AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics BVDSS RDS ON ID D RoHS Compliant & Halogen-Free 200V 250m 10A G S Description

Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2559

Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

STB10NB20

Contextual Info: STB10NB20 N-CHANNEL 200V - 0.30Ω - 10A D2PAK PowerMESH MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB10NB20 200 V <0.40 Ω 10 A TYPICAL RDS(on) = 0.30 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STB10NB20

Contextual Info: STB10NB20 N-CHANNEL 200V - 0.30Ω - 10A D2PAK PowerMESH MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB10NB20 200 V <0.40 Ω 10 A TYPICAL RDS(on) = 0.30 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

2SK2520-01MR

Abstract: 2SK2520
Contextual Info: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2519-01

Contextual Info: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2519-01

Abstract: 200v 10A mosfet
Contextual Info: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2sk2520

Abstract: 2SK2520-01MR
Contextual Info: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

p10nb20

Abstract: p10nb20f p10nb
Contextual Info: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω