200V 50A MOS FET Search Results

1D50A

Abstract: SDF50NA20 D250 200V 50A mos fet
Contextual Info: Æwtïon PRODUCT D E V IC E S ,IN C . CÂTÂL N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V , 5 0 A , 0.05 • SYMBOL UNITS Dr a i n - s o u r c e V o l t . l D ra i n - G a t e Vo I ta g e ( Rgs = 1 . OMn) ( 1 ) G a te -S o u rce V o lta g e

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

2SK1463

Abstract: T03P 5s20 S 10 S T
Contextual Info: Ordering number: EN 34 6 6 _ 2SK1463 N-Channel MOS Silicon FET Very High-Speed Sw itching A pplications F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute Maximum Ratings at T a= 25°C Drain to Source Voltage

2SK1454

Abstract: DCS05
Contextual Info: Ordering number:EN 3457 2SK1454 N 0 .3 4 5 7 SANYO N-Channel MOS Silicon FET i Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching • Converters. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage

Contextual Info: Æiitwan PRODUCT DEVICES,INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 » TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 4 0 0 V, SYMBOL UN ITS VDSS 400 Vdc VDGR 400 Vdc

Contextual Info: 2SK3609-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series Outline Drawings mm 外形寸法図 OUT VIEW Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

FS50SM-5A

Abstract: FS50SM-5A-A8
Contextual Info: FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS ON (max) : 0.068 Ω ID : 50 A Outline TO-3P 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications

power supply 100v 30a schematic

Abstract: 2SK3597-01
Contextual Info: 2SK3597-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

200V 50A mos fet

Abstract: power supply 100v 30a schematic 2SK3596-01L
Contextual Info: 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3608-01L

Abstract: 100V 100A mos fet 200V 50A mos fet
Contextual Info: 2SK3608-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: 2SK3613-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

OLOA

Abstract: 2SK623
Contextual Info: blE D • 2SK623 MMTbEDS OQiailü ÖSb ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 02 ■ FEATURES • Low O n-R esistance • High S p ee d S w itching 1 Gaie 2 Dram i Flange ) 3. Source I Dimensions in mm )

ZD 103

Abstract: 200V 50A mos fet FS50SM-5A FS50SM-5A-A8
Contextual Info: FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS ON (max) : 0.068 Ω ID : 50 A Outline TO-3P 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications

diode FR 105

Abstract: 2SK3613-01
Contextual Info: 2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

200V 50A mos fet

Abstract: diode sj n-channel 250V power mosfet 2SK3556-01L
Contextual Info: 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

2SK3612-01L

Abstract: 200V 50A mos fet
Contextual Info: 2SK3612-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

SCHEMATIC POWER SUPPLY WITH IGBTS

Abstract: smps 450W IRFP460 application IRFP460 full bridge make full-bridge SMPS IRFP460 APPLICATION NOTE IRFP460 h motor bridge SCHEMATIC 450w smps dc-dc converter with irfp460 schematic SMPS 12V
Contextual Info: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications Application Note September 2000 AN-7523 Authors: Alexander H. Craig and Sampat Shekhawat IGBTs have been providing motor drive circuit designers with the ability to increase power density and reduce overall system

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

Contextual Info: FK30SM-5 High-Speed Switching Use Nch Power MOS FET REJ03G1402-0200 Previous: MEJ02G0204-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 250 V rDS (ON) (max) : 0.108 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

Contextual Info: FK30SM-6 High-Speed Switching Use Nch Power MOS FET REJ03G1403-0200 Previous: MEJ02G0214-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 300 V rDS (ON) (max) : 0.143 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

Contextual Info: FK30SM-5 High-Speed Switching Use Nch Power MOS FET REJ03G1402-0200 Previous: MEJ02G0204-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 250 V rDS (ON) (max) : 0.108 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

Contextual Info: FK30SM-6 High-Speed Switching Use Nch Power MOS FET REJ03G1403-0200 Previous: MEJ02G0214-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 300 V rDS (ON) (max) : 0.143 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A