200V 5A MOSFET Search Results

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FRL230D FRL230H FRL230R 1E14
Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

diode PJ 65 MG

Abstract: 5a 12v regula
Contextual Info: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FRL230D FRL230H FRL230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a

Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

1E14

Abstract: 2E12 FRL230R4 JANSR2N7275
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

Contextual Info: y*Rg*s FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

relay 12v 100A

Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSL923AOD, FSL923AOR H A R R IS S E M I C O N D U C T O R 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 5A, -200V, ro s O N = 0.670Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O SFETs

Contextual Info: FSL923AOD, FSL923AOR 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -200V, ros ON = 0-670Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

632-S

Contextual Info: fn H a r r i s U U FRL230D, FRL230R, S E M I C O N D U C T O R F R IL 2 3 H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

d5n20

Abstract: STD5N20L STD5N20LT4 D5N20L
Contextual Info: STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STD5N20L 200 V < 0.7 Ω 5A 33 W • ■ ■ ■ TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE

STD5N20

Contextual Info: STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY MOSFET TYPE STD5N20 • ■ ■ ■ VDSS RDS on ID 200 V < 0.8 Ω 5A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL

d5n20

Contextual Info: STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STD5N20L 200 V < 0.7 Ω 5A 33 W • ■ ■ ■ TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE

STD5N20

Contextual Info: STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY MOSFET TYPE STD5N20 • ■ ■ ■ VDSS RDS on ID 200 V < 0.8 Ω 5A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL