200V 5A PNP Search Results

200V 5A PNP Result Highlights (5)

Part	Manufacturer	Description
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TPCP8606	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8

200V 5A PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TF561S Abstract: Thyristor to220 600v 12A TO220F TF541M TF321S tf541m 22 l Contextual Info: Selection Guide Thyristors Type Rated Current 3A General purpose 5A 8A High sensitivity Array 3A 5A 5A x 4 circuits 200V TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A — — Reverse Voltage 400V 600V TF341M TF361M TF341S TF361S TF541M TF561M ✽ TF541S	Original	TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A TF341M TF361M TF341S TF561S Thyristor to220 600v 12A TO220F TF541M tf541m 22 l	PDF
FZT956 Contextual Info: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current	Original	FZT956 OT223 -200V -165mV AEC-Q101 OT223 J-STD-020 MIL-STD-202, FZT956 DS36119	PDF
pnp 200v 5a switching characteristics Abstract: pnp 200v 2SA1250 200v 5a transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.	Original	2SA1250 -200V -10mA; -200V; pnp 200v 5a switching characteristics pnp 200v 2SA1250 200v 5a transistor	PDF
Contextual Info: , U na. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1250 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) • Low Collector Saturatioin Voltage.)= -1.0V(Max.)@ lc= -5A	Original	2SA1250 -200V -10mA; -200V;	PDF
philips BDV64A Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR Contextual Info: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO	OCR Scan	TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR	PDF
philips BDV64A Abstract: BDX67 Contextual Info: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)	OCR Scan	bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67	PDF
Contextual Info: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi−Fi Power Amp, Audio Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE92 NTE93	PDF
NTE92 Abstract: NTE93 NTE93MCP pnp 200v Contextual Info: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi–Fi Power Amp, Audio Ourtput Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE92 NTE93 NTE92 NTE93 NTE93MCP pnp 200v	PDF
ZTX956 Abstract: DSA003780 Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio	Original	ZTX956 -100mA, 50MHz -100mA 100mA, -10mA, 100ms ZTX956 DSA003780	PDF
2SC2607 Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.	Original	2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent	PDF
2SC2607 Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.	Original	2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor	PDF
2SA651 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA651 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.	Original	2SA651 -200V -25mA; -200V; 2SA651	PDF
2SC3857 Abstract: 2SA1493 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications	Original	2SA1493 -200V 2SC3857 -200V; 2SC3857 2SA1493	PDF
2SC2607 Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation	Original	2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607	PDF

NTE58 Abstract: NTE59 Contextual Info: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE58 NTE59 NTE58 NTE59	PDF
FZT855 Abstract: FZT956 FZT955 Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C	Original	OT223 FZT955 FZT956 FZT955 FZT855 FZT956 -100mA -10mA* FZT855	PDF
2sa1333 Contextual Info: JMnic Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base	Original	2SA1333 MT-200 MT-200) -25mA -200V; 2sa1333	PDF
2SA1250 Contextual Info: JMnic Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING see Fig.2 PIN	Original	2SA1250 -10mA 2SA1250	PDF
2sa1333 Abstract: 2sa133 Contextual Info: Inchange Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2SA1333 MT-200 MT-200) -25mA -200V; 2sa1333 2sa133	PDF
2SA1250 Contextual Info: Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2	Original	2SA1250 -10mA 2SA1250	PDF
2SA1250 Contextual Info: SavantIC Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2	Original	2SA1250 -10mA 2SA1250	PDF
2SA1333 Contextual Info: SavantIC Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2SA1333 MT-200 MT-200) -25mA -200V; 2SA1333	PDF
2SA1169 Abstract: 2sa116 MT200 package Contextual Info: SavantIC Semiconductor Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2SA1169 MT-200 MT-200) -200V; 2SA1169 2sa116 MT200 package	PDF
2Sa1169 Contextual Info: JMnic Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base	Original	2SA1169 MT-200 MT-200) -200V; 2Sa1169	PDF

200V 5A PNP Search Results

200V 5A PNP Result Highlights (5)

200V 5A PNP Datasheets Context Search

TF561S

FZT956

pnp 200v 5a switching characteristics

philips BDV64A

philips BDV64A

NTE92

ZTX956

2SC2607

2SC2607

2SA651

2SC3857

2SC2607

NTE58

FZT855

2sa1333

2SA1250

2sa1333

2SA1250

2SA1250

2SA1333

2SA1169

2Sa1169