200V 5A TRANSISTOR Search Results

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FRL230D FRL230H FRL230R 1E14
Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

diode PJ 65 MG

Abstract: 5a 12v regula
Contextual Info: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FRL230D FRL230H FRL230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a

Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

1E14

Abstract: 2E12 FRL230R4 JANSR2N7275
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

Contextual Info: y*Rg*s FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

relay 12v 100A

Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSL923AOD, FSL923AOR H A R R IS S E M I C O N D U C T O R 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 5A, -200V, ro s O N = 0.670Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O SFETs

Contextual Info: FSL923AOD, FSL923AOR 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -200V, ros ON = 0-670Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

632-S

Contextual Info: fn H a r r i s U U FRL230D, FRL230R, S E M I C O N D U C T O R F R IL 2 3 H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

FZT956

Contextual Info: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current

RURP1510

Abstract: MUR1510
Contextual Info: MUR1510, MURI515, MUR1520, RURP1510, RURP1515, RURP1520 Semiconductor 1 5A, 100V - 200V Ultrafast Diodes April 1995 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 30ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V

diode 1000V 10a

Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Contextual Info: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A

pnp 200v 5a switching characteristics

Abstract: pnp 200v 2SA1250 200v 5a transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.