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    200V 70A Search Results

    200V 70A Result Highlights (5)

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    CS4200V-01L Coilcraft Inc Current Sense Transformer, 35A, ROHS COMPLIANT Visit Coilcraft Inc
    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL73024SEHX/SAMPLE Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors, PFL, / Visit Renesas Electronics Corporation
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    200V 70A Price and Stock

    IXYS Corporation IXFH70N20Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A
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    TTI IXFH70N20Q3 Tube 300
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    IXYS Corporation IXFT70N20Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFT70N20Q3 Tube 300
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    200V 70A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDA70N20

    Abstract: No abstract text available
    Text: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)


    Original     		PDF FDA70N20 FDA70N20

    N-Channel MOSFET 200v

    Abstract: FDA70N20
    Text: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)


    Original     		PDF FDA70N20 FDA70N20 N-Channel MOSFET 200v

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    Untitled

    Abstract: No abstract text available
    Text: RCX700N20 Nch 200V 70A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 42.7mW ID 70A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.


    Original     		PDF RCX700N20 O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: RCJ700N20 Nch 200V 70A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 42.7mW ID 70A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.


    Original     		PDF RCJ700N20 SC-83) R1102A

    SCDA6

    Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
    Text: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A


    Original     		PDF 1N5415 1N5420 1N5550 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 1N5615, SCDA6 semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UFR7010-UFR7020 UFR7120-UFR7150 UFR7250-UFR7280 ULTRA FAST RECOVERY RECTIFIERS MAXIMUM RATINGS Rating UFR Symbol 7010 7015 7020 7120 7130 7140 7150 7250 7260 7270 7280 Working peak reverse voltage VRWM 100V 150V 200V 200V 300V 400V


    Original     		PDF UFR7010-UFR7020 UFR7120-UFR7150 UFR7250-UFR7280 FR7150

    IRFE210

    Abstract: JANTX2N6784U JANTXV2N6784U LCC-18 4.5v to 100v input regulator
    Text: PD - 91722B IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U  HEXFET TRANSISTORS JANTXV2N6784U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/556] 200V, N-CHANNEL Product Summary Part Number IRFE210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A The leadless chip carrier (LCC) package represents the


    Original     		PDF 91722B IRFE210 JANTX2N6784U JANTXV2N6784U LCC-18) MIL-PRF-19500/556] electrical252-7105 IRFE210 JANTX2N6784U JANTXV2N6784U LCC-18 4.5v to 100v input regulator

    IRF 725

    Abstract: IRFF210 JANTX2N6784 JANTXV2N6784
    Text: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International


    Original     		PDF 90424C IRFF210 JANTX2N6784 JANTXV2N6784 MIL-PRF-19500/556 O-205AF) IRF 725 IRFF210 JANTX2N6784 JANTXV2N6784

    Untitled

    Abstract: No abstract text available
    Text: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International


    Original     		PDF 90424C IRFF210 JANTX2N6784 JANTXV2N6784 MIL-PRF-19500/556 O-205AF) electrical252-7105

    Untitled

    Abstract: No abstract text available
    Text: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9210 -200V

    Untitled

    Abstract: No abstract text available
    Text: PD - 93989 IRFE9210 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE9210 BVDSS -200V RDS(on) 3.0Ω ID -1.3A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface


    Original     		PDF IRFE9210 LCC-18) -200V gr252-7105

    Untitled

    Abstract: No abstract text available
    Text: PD - 91722B IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U  HEXFET TRANSISTORS JANTXV2N6784U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/556] 200V, N-CHANNEL Product Summary Part Number IRFE210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A The leadless chip carrier (LCC) package represents the


    Original     		PDF 91722B IRFE210 JANTX2N6784U JANTXV2N6784U LCC-18) MIL-PRF-19500/556]

    IRFE9210

    Abstract: LCC-18
    Text: PD - 93989 IRFE9210 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE9210 BVDSS -200V RDS(on) 3.0Ω ID -1.3A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface


    Original     		PDF IRFE9210 LCC-18) -200V grounde52-7105 IRFE9210 LCC-18

    Untitled

    Abstract: No abstract text available
    Text: NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier SCR 125 Amp Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE5575, NTE5577, NTE5579 NTE5575 NTE5577 200mA 125mA 200mV

    NTE5575

    Abstract: NTE5577 NTE5579 SCR 70A
    Text: NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier SCR 125 Amp Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE5575, NTE5577, NTE5579 NTE5575 NTE5577 200mA 125mA NTE5575 NTE5577 NTE5579 SCR 70A

    NTE5579

    Abstract: NTE5575 NTE5577 "Silicon Controlled Rectifier" SCR 70A scr 125 amp
    Text: NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier SCR 125 Amp, TO83 Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE5575, NTE5577, NTE5579 NTE5575 NTE5577 200mA 125mA 200mV NTE5579 NTE5575 NTE5577 "Silicon Controlled Rectifier" SCR 70A scr 125 amp

    IXFH70N20Q3

    Abstract: 70N20
    Text: Advance Technical Information IXFT70N20Q3 IXFH70N20Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 200V = 70A Ω ≤ 40mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFT70N20Q3 IXFH70N20Q3 O-268 O-247 70N20Q3 IXFH70N20Q3 70N20

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT70N20Q3 IXFH70N20Q3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 200V = 70A Ω ≤ 40mΩ TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings


    Original     		PDF IXFT70N20Q3 IXFH70N20Q3 O-268 70N20Q3

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-21176 12/06 70CRU02PbF Ultrafast Rectifier Features • • • • • • • • trr = 28ns IF AV = 70A @ TC = 145°C VR = 200V Two Common-Cathode Diodes Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Drop


    Original     		PDF PD-21176 70CRU02PbF 70CRU02 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-21176 12/06 70CRU02PbF Ultrafast Rectifier Features • • • • • • • • trr = 28ns IF AV = 70A @ TC = 145°C VR = 200V Two Common-Cathode Diodes Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Drop


    Original     		PDF PD-21176 70CRU02PbF 70CRU02 O-218

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20619 rev. C 12/06 70CRU02 Ultrafast Rectifier Features • • • • • • • trr = 28ns IF AV = 70A @TC = 145°C VR = 200V Two Common-Cathode Diodes Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Drop


    Original     		PDF PD-20619 70CRU02 70CRU02 08-Mar-07

    powertech

    Abstract: 200v 5a transistor
    Text: "BIG IDEAS IN BIG POWER” • PowerTech 70 AMPERES PT-7509 SILICON NPN TRANSISTOR MAXIMUM RATINGS PT-7509 SYMBOL Collector-Base Voltage 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage 10V V EBO Peak Collector Current 'cm * 70A D.C. Collector Current


    OCR Scan     		PDF PT-7509 PT-7509 200mA, 100KHz FT-7509 powertech 200v 5a transistor

    B14A

    Abstract: No abstract text available
    Text: “BIG IDEAS IN BIG POWER ’’ H M • PowerTech 70 AM PERES PT-7509 SILICON IMPIMTRANSISTOR MAXIMUM RATINGS SYMBOL Collector-Base Voltage PT-7509 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage V EBO 10V Peak Collector Current 'c m *


    OCR Scan     		PDF PT-7509 Q741D PT-75Ã B14A