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    200V AUTOMOTIVE MOSFET Search Results

    200V AUTOMOTIVE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    200V AUTOMOTIVE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: February 28th, 2012 Automotive Grade AUIRS2003S HALF-BRIDGE DRIVER Product Summary Features •             Floating channel designed for bootstrap operation Fully operational to +200V Tolerant to negative transient voltage, dV/dt immune


    Original     		PDF AUIRS2003S 290mA 60egulatory

    free IR circuit diagram

    Abstract: rectifier circuit diagram
    Text: February 28th, 2012 Automotive Grade AUIRS2003S HALF-BRIDGE DRIVER Product Summary Features •             Floating channel designed for bootstrap operation Fully operational to +200V Tolerant to negative transient voltage, dV/dt immune


    Original     		PDF AUIRS2003S 290mA 600mA 680ns 150ns 520ns free IR circuit diagram rectifier circuit diagram

    AUIRS2003S

    Abstract: AEC-Q100-004 200V AUTOMOTIVE MOSFET AEC-Q100 AEC-Q100-002 AUIRS2003STR AUIRS2003
    Text: September 21, 2009 Automotive Grade AUIRS2003S HALF-BRIDGE DRIVER Product Summary Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Topology Fully operational to +200V Tolerant to negative transient voltage, dV/dt immune VOFFSET


    Original     		PDF AUIRS2003S AUIRS2003S" AUIRS2003S AEC-Q100-004 200V AUTOMOTIVE MOSFET AEC-Q100 AEC-Q100-002 AUIRS2003STR AUIRS2003

    IRFZ44N complementary

    Abstract: IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent
    Text: 108872 UltraFet LC 00045 8/29/00 11:16 AM Page 1 Fall 2000 Update UltraFET Summary Don’t Forget Intersil’s popular UltraFET family of over 200 products, from 30V to 200V. Find the perfect match for your circuit on our Line Cards: Automotive LC-00005.1,


    Original     		PDF LC-00005 LC-00011 HUF75823D3 HUF75823D3S HUF75829D3 HUF75829D3S HUF75831SK8 HUF75842P3 HUF75842S3S HUF75852G3 IRFZ44N complementary IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent

    AEC-Q100

    Abstract: 3 phase rectifier circuit diagram igbt AUIRS2003S AEC-Q100-004 200V AUTOMOTIVE MOSFET AEC-Q100-002 AUIRS2003STR DR97-3 AEC-Q100-003 555 circuit stepper motor
    Text: January 28, 2009 Automotive Grade AUIRS2003S HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Topology Fully operational to +200V Tolerant to negative transient voltage, dV/dt immune VOFFSET


    Original     		PDF AUIRS2003S AEC-Q100 3 phase rectifier circuit diagram igbt AUIRS2003S AEC-Q100-004 200V AUTOMOTIVE MOSFET AEC-Q100-002 AUIRS2003STR DR97-3 AEC-Q100-003 555 circuit stepper motor

    AEC-Q100-002

    Abstract: DR97-3 igbt qualification circuit
    Text: PRELIMINARY January 20th, 2009 Automotive Grade AUIRS2003S HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Topology Fully operational to +200V Tolerant to negative transient voltage, dV/dt immune VOFFSET


    Original     		PDF AUIRS2003S 290mA 600mA 680ns 150ns 520ns AEC-Q100-002 DR97-3 igbt qualification circuit

    50b60pd

    Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


    Original     		PDF 6306A AUIRGP50B60PD1 AUIRGP50B60PD1E 50b60pd 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


    Original     		PDF 6306A AUIRGP50B60PD1 AUIRGP50B60PD1E

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306 AUTOMOTIVE GRADE AUIRGP50B60PD1 WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ


    Original     		PDF AUIRGP50B60PD1

    50B60PD1

    Abstract: P50B60 p50b60pd1
    Text: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters


    Original     		PDF AUIRGP50B60PD1 AUIRGP50B60PD1-E 50B60PD1 P50B60 p50b60pd1

    50NF25

    Abstract: mosfet 45a 200v JESD97 STB50NF25 STP50NF25
    Text: STB50NF25 STP50NF25 N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 Low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID Pw STP50NF25 250V <0.069Ω 45A 160W STB50NF25 250V <0.069Ω 45A 160W • 100% avalanche tested ■


    Original     		PDF STB50NF25 STP50NF25 O-220 50NF25 mosfet 45a 200v JESD97 STB50NF25 STP50NF25

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP8N20L 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A,200V This N-Channel enhancement mode silicon gate power field


    Original     		PDF RFP8N20L 00A/HS 300ns

    Untitled

    Abstract: No abstract text available
    Text: AUIRFR4292 AUIRFU4292 AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * l l l


    Original     		PDF AUIRFR4292 AUIRFU4292 AUIRFR/U4292

    AUFR4620

    Abstract: 78M24a AUIRFR4620 AN-994 AEC-Q1010
    Text: PD - 97681 AUTOMOTIVE GRADE AUIRFR4620 HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF AUIRFR4620 AUFR4620 78M24a AUIRFR4620 AN-994 AEC-Q1010

    40NF20

    Abstract: STMicroelectronics 40nf20 mosfet 40a 200v STP40NF20 st 393 STB40NF20 STF40NF20 STW40NF20
    Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20


    Original     		PDF STP40NF20 STF40NF20 STB40NF20 STW40NF20 D2PAK/TO-220/TO-220FP/TO-247 STB40NF20 STP40NF20 O-220 40NF20 STMicroelectronics 40nf20 mosfet 40a 200v st 393 STF40NF20 STW40NF20

    40NF20

    Abstract: STMicroelectronics 40nf20 STP40NF20 STB40NF20 S1217 STW40NF20 STF40NF20
    Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20


    Original     		PDF STP40NF20 STF40NF20 STB40NF20 STW40NF20 D2PAK/TO-220/TO-220FP/TO-247 O-220 40NF20 STMicroelectronics 40nf20 S1217 STW40NF20

    40NF20

    Abstract: STMicroelectronics 40nf20 STB40NF20
    Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20


    Original     		PDF STP40NF20 STF40NF20 STB40NF20 STW40NF20 D2PAK/TO-220/TO-220FP/TO-247 STB40NF20 STP40NF20 O-220 40NF20 STMicroelectronics 40nf20

    18N20

    Abstract: FQD18N20V2
    Text: TM FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD18N20V2 FQU18N20V2 O-252 FQD18N20V2TF FQD18N20V2TM 18N20

    P40N20

    Abstract: STB40N20 STF40N20 STP40N20 STP40N20FP STW40N20
    Text: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP


    Original     		PDF STP40N20 STF40N20 STB40N20 STW40N20 D2PAK/TO-220/TO-220FP/TO-247 STB40N20 STP40N20 STP40N20FP O-220 P40N20 STF40N20 STP40N20FP STW40N20

    75nf20

    Abstract: STP75NF20
    Text: STB75NF20 STP75NF20 - STW75NF20 N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STB75NF20 200V <0.034Ω 75A 3 1 STP75NF20 200V <0.034Ω 75A STW75NF20 200V <0.034Ω


    Original     		PDF STB75NF20 STP75NF20 STW75NF20 O-220 O-247 O-247 O-220 75nf20

    20nf20

    Abstract: 20NF2 STD20NF20
    Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω


    Original     		PDF STD20NF20 STF20NF20 STP20NF20 DPAK/TO-220/TO-220FP O-220FP O-220 20nf20 20NF2

    20nf20

    Abstract: 20NF2 200v mosfet STD20NF20 st 20nf20
    Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω


    Original     		PDF STD20NF20 STF20NF20 STP20NF20 DPAK/TO-220/TO-220FP O-220FP O-220 20nf20 20NF2 200v mosfet st 20nf20

    Untitled

    Abstract: No abstract text available
    Text: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A


    Original     		PDF STP30NF20 STB30NF20 STW30NF20 O-220/TO-247/D2PAK STP30NF20 O-247 O-220

    20NF2

    Abstract: 20NF20 STD20NF20 STF20NF20 STP20NF20 JESD97
    Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω • Exceptional dv/dt capability


    Original     		PDF STD20NF20 STF20NF20 STP20NF20 DPAK/TO-220/TO-220FP STF20NF20 O-220 O-220FP 20NF2 20NF20 STD20NF20 STP20NF20 JESD97