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    200V IGBT Search Results

    200V IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    200V IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FAN7888MX

    Abstract: FAN7888 HIGH-VOLTAGE HALF BRIDGE DRIVER FAN7888M JESD51-2 JESD51-3 J-STD-020B MS-013
    Text: FAN7888 3 Half-Bridge Gate-Drive IC Features Description „ Floating Channel for Bootstrap Operation to +200V The FAN7888 is a monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOSFETs and IGBTs operating up to +200V.


    Original     		PDF FAN7888 350mA/650mA 270ns FAN7888 FAN7888MX HIGH-VOLTAGE HALF BRIDGE DRIVER FAN7888M JESD51-2 JESD51-3 J-STD-020B MS-013

    Gate Turn-off Thyristor 600V 20A

    Abstract: INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW PVD150-6 snubber thyristor thyristor 15KW
    Text: TENTATIVE PIM MODULE PVD150PVD150-6 15KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PDF PVD150PVD150-6 PVD150-6 Gate Turn-off Thyristor 600V 20A INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW snubber thyristor thyristor 15KW

    11kw

    Abstract: 600V 100A thyristor thyristor inverter dc 3phase ac inverter circuit PVD110-6 snubber thyristor 100A gate turn-off thyristor igbt 500V 1A
    Text: TENTATIVE PIM MODULE PVD110PVD110-6 11KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PDF PVD110PVD110-6 PVD110-6 11kw 600V 100A thyristor thyristor inverter dc 3phase ac inverter circuit snubber thyristor 100A gate turn-off thyristor igbt 500V 1A

    IGBT TEST

    Abstract: igbt 500V 1A PVD75-6 thyristor inverter
    Text: TENTATIVE PIM MODULE PVD75PVD75-6 7.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 7.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PDF PVD75PVD75-6 PVD75-6 IGBT TEST igbt 500V 1A thyristor inverter

    UR620C

    Abstract: RURD620CCS9A UR620 ultrafast diodes 6A/200V RURD620CC RURD620CCS D620C
    Text: RURD620CC, RURD620CCS Data Sheet [ /Title RUR D620C C, RURD 620CC S /Subject (6A, 200V Ultrafa st Dual Diodes ) /Autho r () /Keywords (6A, 200V Ultrafa st Dual Diodes , Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power January 2000


    Original     		PDF RURD620CC, RURD620CCS D620C 620CC RURD620CC RURD620CCS UR620C RURD620CCS9A UR620 ultrafast diodes 6A/200V D620C

    igbt 500V 50A

    Abstract: igbt 500V 1A PVD55-6 thyristor inverter
    Text: TENTATIVE PIM MODULE PVD55 PVD55-6 5.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PDF PVD55 PVD55-6 PVD55-6 igbt 500V 50A igbt 500V 1A thyristor inverter

    FAN7842

    Abstract: fast high side driver high side gate driver FAN7842M FAN7842MX
    Text: FAN7842 Half Bridge Gate Driver Features Description • Floating Channels Designed for Bootstrap Operation to +200V. The FAN7842, a monolithic half-bridge gate driver IC, can drive MOSFETs and IGBTs which operate up to +200V. Fairchild’s high voltage process and common-mode noise canceling technique provides stable operation of the high-side driver under


    Original     		PDF FAN7842 FAN7842, FAN7842 fast high side driver high side gate driver FAN7842M FAN7842MX

    schematic DIAGRAM AVR 150 kva GENERATOR

    Abstract: schematic DIAGRAM AVR 500 kva GENERATOR schematic diagram igbt inverter welding machine A143 PNP switching transistor 007NFEF2 040HFEF2 005NFEF2 L200-011NFE 200V DC TO 240V AC inverter schematic diagram schematic diagram UPS 5 KVA
    Text: Cover L2002 Series Inverter Instruction Manual • Single-phase Input 200V Class • Three-phase Input 200V Class • Three-phase Input 400V Class Manual Number: NB675X Sept. 2006 After reading this manual, keep it handy for future reference. Hitachi Industrial Equipment Systems Co., Ltd.


    Original     		PDF L2002 NB675X schematic DIAGRAM AVR 150 kva GENERATOR schematic DIAGRAM AVR 500 kva GENERATOR schematic diagram igbt inverter welding machine A143 PNP switching transistor 007NFEF2 040HFEF2 005NFEF2 L200-011NFE 200V DC TO 240V AC inverter schematic diagram schematic diagram UPS 5 KVA

    106N20

    Abstract: 90N20 IXFN 360 D-68623
    Text: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions


    Original     		PDF 90N20 106N20 90N20 200ns 106N20 O-264 D-68623 IXFN 360

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns FMP26-02P VDSS 43 ID25 T1 5 34 T2 (Electrically Isolated Tab) 11 22 Symbol Test Conditions


    Original     		PDF 240ns 150ns FMP26-02P 50/60HZ,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 (Electrically Isolated Tab) T2 11 22 Symbol Test Conditions


    Original     		PDF FMP26-02P 240ns 150ns 50/60HZ, 00A/s

    FMP26-02P

    Abstract: IXYS Class D Switching Amplifiers
    Text: Advance Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings


    Original     		PDF FMP26-02P 240ns 150ns 50/60HZ, 00A/s FMP26-02P IXYS Class D Switching Amplifiers

    FAN7888

    Abstract: FAN7888M FAN7888MX JESD51-2 JESD51-3 MS-013
    Text: FAN7888 3 半桥式栅极驱动 IC 产品特性 说明 „ 自举工作通道浮动电压达到 +200V 该 FAN7888 是一款集成了三个半桥式栅极驱动器集成电 路的芯片，专为高压，高速驱动 MOSFET 和 IGBT 设计， 可在高达 +200V 电压下工作。


    Original     		PDF FAN7888 350mA/650mA 270ns 20-SOIC FAN7888M FAN7888MX FAN7888 FAN7888M FAN7888MX JESD51-2 JESD51-3 MS-013

    Untitled

    Abstract: No abstract text available
    Text: FAN7842 Half-Bridge Gate Driver Features Description „ Floating Channels Designed for Bootstrap Operation The FAN7842, a monolithic half-bridge gate driver integrated circuit, can drive MOSFETs and IGBTs that operate up to +200V. Fairchild’s high-voltage process and


    Original     		PDF FAN7842 350mA/650mA FAN7842, FAN7842

    Untitled

    Abstract: No abstract text available
    Text: FAN7888 3 Half-Bridge Gate-Drive IC Features Description  Floating Channel for Bootstrap Operation to +200V The FAN7888 is a monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOSFETs and IGBTs operating up to +200 V.


    Original     		PDF FAN7888 FAN7888

    U20N2K2S

    Abstract: U20N1K5S Vat20 u20x2k2 FORWARD REVERSE 3 PHASE MOTOR 3 wiring control diagram with run and jog U20X0K7S U20N0K7S frequency inverter tverter single phase inverter IGBT driver 50 kva U20N0K4S GE DC DRIVE 460V ADJUSTABLE SPEED DRIVE
    Text: GE Power Controls VARIABLE SPEED DRIVE UNIT INVERTER VAT20 1ph 200V-240V system, 0.2-0.75kW 1ph/3ph 200/240V system, 1.5-2.2kW 3ph 380/460V system, 0.75-2.2kW INSTRUCTION MANUAL - NOTICE -1.


    Original     		PDF VAT20 00V-240V 200/240V 380/460V VAT20, 89/336/EEC) U20X1K5 U20X2K2 U20AF2K2 U20N2K2S U20N1K5S Vat20 u20x2k2 FORWARD REVERSE 3 PHASE MOTOR 3 wiring control diagram with run and jog U20X0K7S U20N0K7S frequency inverter tverter single phase inverter IGBT driver 50 kva U20N0K4S GE DC DRIVE 460V ADJUSTABLE SPEED DRIVE

    Gate Driver

    Abstract: FAN7842 FAN7842M FAN7842MX JESD51-2 JESD51-3 JESD22A111
    Text: FAN7842 High and Low Side Gate Driver Features Description „ Floating Channels Designed for Bootstrap Operation The FAN7842, a monolithic high and low side gate drive IC, which can drive MOSFETs and IGBTs that operate up to +200V. „ „ „ „ „ „ „ „


    Original     		PDF FAN7842 350mA/650mA FAN7842, FAN7842 Gate Driver FAN7842M FAN7842MX JESD51-2 JESD51-3 JESD22A111

    CM400DU-12NFH

    Abstract: snubber igbt snubber igbt 300V 400A
    Text: Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 CM400DU-12NFH Dual IGBTMOD NFH-Series Module 400 Amperes/600 Volts VCC = 300V VGE = 15V RG = 3.1Ω Tj = 25°C Inductive Load 101 103 102 (mJ/PULSE) off), ESW( VCC = 200V


    Original     		PDF CM400DU-12NFH Amperes/600 CM400DU-12NFH snubber igbt snubber igbt 300V 400A

    110N20

    Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol


    OCR Scan     		PDF 120N20 200ns 110N20 IXFK110N20 Mosfet P 110A, diode lt 429

    110N20

    Abstract: pf 480 d25
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)


    OCR Scan     		PDF 200ns 200ns O-264 110N20 120N20 Cto150 110N20 pf 480 d25

    diode mur

    Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
    Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.


    OCR Scan     		PDF GE1001, GE1002, GE1003, GE1004 GE1101, GE1102, GE1103, GE1104 GE1301, GE1302, diode mur 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A

    RM338

    Abstract: qfl 289 106N20 IXFK90N20
    Text: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2


    OCR Scan     		PDF IXFK90N20 IXFN106N20 90N20 106N20 200ns 20mi2 200ns d68623 106N20 RM338 qfl 289

    VQE 22

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V


    OCR Scan     		PDF IRGPH40S O-247AC VQE 22

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1030 International ioRRectîfier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V ge = 15V V CES = 1 200V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPH50M 10kHz) O-247AC C-476