200YS Search Results

21Z8

Abstract: 331Z 221Z
Contextual Info: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 1Z6.21Z390 1Z6.8A1Z30A APPLICATIONS: • CONSTANT VOLTAGE REGULATION • TRANSIENT SUPPRESSORS FEATURES: • Average Power Dissipation : P=1W • Peak Reverse Power Dissipation : P r SM=200W at tw=200ys • Zener Voltage

THM365120AS80

Abstract: tc51256t THM365120 TC51256
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM365120AS-70, 80, 10 description] The TKM365120AS is a 524,288 words by 36 bits dynamic RAM module which assembled 16 pcs of TC514256AJ and 8 pcs of TC51256T on both sides the printed circuit board. The THM365120AS is optimized for application to the system which are required

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K

Contextual Info: TOSHIBA _ MEMORY _ E lectronic C omponents B usiness S ector _ 4,194,304 W O R D X 1 B IT D Y N A M IC RAM T C 5 1 4 1 0 1 J/ Z -8 0 T C 5 1 4 1 0 1 J / Z -1 0 DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1

programmable Sine Wave Generator Frequency Generator

Abstract: Programmable Sine Wave Generator mtron crystal oscillator 24 MHz
Contextual Info: 3 ^ M ic r o U February 1997 PRELIMINARY n e a r ML2037 500kHz, Serial Input, Programmable Sine Wave Generator with Digital Gain Control GENERAL DESCRIPTION FEATURES The ML2037 is a programmable sine wave generator with a frequency range of DC to 500kHz. No external

TC511000AJ

Abstract: tc511000
Contextual Info: THM91010AS-70, 80, 10 ¡d e s c r i p t i o n The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board. optimized for application to the systems which are required

TC514101J

Abstract: Z80 INTERFACING TECHNIQUES
Contextual Info: 4,194,304 WORD x 1 BIT DYNAMIC RATI * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101J/Z utilizes TOSHIBA* s CMOS Silicon gate process technology as well

E1338

Contextual Info: IBM11J8360DL 8M X 36 5.0V IC D R A M C ard Features • Industry S tan dard 8 8 P in IC D R A M Card • Single 5.0V , ± 0 .2 5 V P ow er S u pply • Perform ance: • All inputs buffered excep t R A S and DATA inputs • Multiple R A S inputs for x l 8 or x 3 6 selectabiiity

TH-Q5401-A1

Abstract: quantum well
Contextual Info: TH-Q5401-A1 100W QUASI-CW LINEAR BAR ARRAYS 940-980 nm DESCRIPTION The TH-Q5401-A1 products are a high optical power laser diode sources for quasi-CW operation, the peak optical power is 100W. These products are based upon MOCVD quantum well design to realize highly efficient 1cm linear bar arrays.The

Z80 CRT

Abstract: 50n8 Z80 CRT controller Z80 application note dynamic ram
Contextual Info: T C 5 1 4 1 0 1 J / Z - 8 0 T C 5 1 4 1 0 1 J / Z - 1 0 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1

a-243

Abstract: AZ60
Contextual Info: 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514102AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514102AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TMM-9

Abstract: HM9100 TC511000AJ THM91020AL-80
Contextual Info: THM91OOOAS/AL-70, 80, 10 THM91021AL-70, 80, 10 Id e s c r i p t i o n ! The THM91000AS/AL 9 pcs of TC511000AJ on The THM91000AS/AL high density and large memory systems, and to is a 1,048,576 words by 9 bits the printed circuit board. is optimized for application to

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TNM91010AS-70, 80, 10 [d e s c r i p t i o n ! The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board.

tc511000

Abstract: TH021 th-021a
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM91000AS/AL-70, 80, 10 THM91021AL-70, 80, 10 IDESCRI PTI0Ñ1 The THM91000AS/AL 9 pcs of TC511000AJ on The THM91000AS/AL high density and large memory systems, and to is a 1,048,576 words by 9 bits dynamic RAM module which assembled

m4512

Abstract: HYM59256AM
Contextual Info: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18

MAX662ACPA

Contextual Info: >kiyjxi>M +12V, 30m A Flash M em ory Program m ing Supply The MAX662A is the first charge-pum p boost converter to provide a regulated +12V output. It requires only a few inexpensive capacitors, and the entire circuit is complete­ ly surface-mountable. _ Fea tures

tc511000

Abstract: tc511000aj TC511000A THM91010AS-10 THM91010AS-70 THM91010AS-80 THM9101QAS-70 KA527
Contextual Info: ü w TOSHIBA MOS MEMORY PRODUCTS THM91010AS-70, 80, 10 IDESCRIPTIOHI The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board.

LCSC 24

Abstract: TC514102J
Contextual Info: TOSHIBA MEMORY E lectronic C omponents B usiness Sector 4 ,1 9 4 ,3 0 4 WORD X 1 BIT DYNAMIC RAM T C 5 1 41 0 2 J/Z-80 T C 5 1 41 0 2 J/Z-10 DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514102J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well

Z80 INTERFACING TECHNIQUES

Abstract: Z80 RAM TC514100
Contextual Info: * This is advanced information and specifications 4,194,304 WORD ;• 1 BIT DYNAMIC RAM are subject to change without notice. DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well

Contextual Info: Ipil 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514102J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM91020L-85, 10, 12 'd e s c r i p t i o n ! The THM91 0 20L is a 1,048,576 words by 9 bits dynamic RAM module which assembled pcs of TC511 0 00J on b oth sides of the printed circuit board. The T H M 9 1 0 20L is optimized for application to the systems wh i c h are required high

Contextual Info: IMAGE UNAVAILABLE THM81022L-85, 10, 12 ISLOCK DIAGRAM DQ.0 O- D a DQ.4 O- q. d A0-A9 A0~A9 flA£» RÂB CS US raiTE w&I’ÎE -II- DQ.1 O- DQ.5 O- D Q, A0~A9 A0-A9 ISs os' EÂ3CÏÏ WHITE WRITE “i h DQ.2 O- ii q, EQ6 O- AO-A 9 D C. A0-A9 Has 35 cs V/P.ITS

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 91022L-85, 10 , 12 [description ! The THM91022L is a 1,048,576 w o r d s b y 9 bits dynamic R A M m o d u l e w h i c h assembled 9 pcs of TC511002J on b o t h sides of the printed circuit board. The THM91022L is optimized for a p plication to the systems w h i c h are required

Z80 INTERFACING TECHNIQUES

Abstract: TC514102J t-rcj
Contextual Info: i 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice, DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 wo r d s b y 1 The TC514102J/Z utilizes T O S H I B A ’S CMOS Silicon gate process technology as well