201-5 HARRIS Search Results

HI-201-5

Abstract: HI201-5 harris i1-201
Contextual Info: H I-201 HARRIS Quad SPST CMOS Analog Switch D escription Features • Analog V oltage R a n g e .± 1 5 V • Analog C u rre n t R a n g e . 80m A • T u rn -O n T im e . 185n s

teledyne TP 1322

Abstract: TP 1322 transitron CM4016A H1-201 HA-2600 HA-2605 HA-2720 HA-2725 transmitter-receiver HARRIS
Contextual Info: PART NUM BER MANUFACTURER S o litron Sprague Teledyne P hilbrick Texas Instrum ents Transitron H A R R IS E Q U IV A L E N T CM 4016A H I-201 C2 ¿UC4000/4001/4002 H A -2 6 0 0 C2 JUC4000C/4001C/4002C H A -2 6 0 5 C2 juc4250 H A -2 7 2 0 A2 juc4250c H A -2 7 2 5

s07a

Abstract: 507a-5 Li-135 HI-507A-5 HI-200 HI-201 HI-508A HI-509A IN4002 JUA709
Contextual Info: BURN-IN CIRCUITS HI-201 H I-2 0 0 TO-100 T a = + 125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 002 Freq: = lO O K H z NOTES: T a = +12 5 ° C D 1 0 2 = IN 4 002 Freq: = lO O K H z HI -506/507/506A/507A f A-j = 5 0 K H Z DASH NOTES: A q = 100KHZ A 2 = 25KHZ A 3 = 12.5KHZ

509a-5 harris

Abstract: HA-2820 HI-508A 508A HI-200 HI-201 HI-509A IN4002 IMO5 1001 harris
Contextual Info: BURN-IN CIRCUITS HI-201 H I-200 TO-100 T a = +125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 0 0 2 F re q : = l O O K H z N O TES: T a = +125°C D 1 0 2 = IN 4 0 0 2 F re q : = l O O K H z HI -506/507/506A/507A f A-j = 5 0 K H Z DAS H NOTES: A q = 100KHZ A 2 = 25KHZ

H12-200

Abstract: MPC16S HI-200-5 Burr Brown 3550K HA2-2065-5 RC1556 HA2-2055 AM715 AM-462-2 H11-506A-5
Contextual Info: BURN-IN CIRCUITS HI-201 H I-2 0 0 TO-100 T a = +125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 0 0 2 F re q : = l O O K H z N O TES: T a = +125°C D 1 0 2 = IN 4 0 0 2 F re q : = l O O K H z HI -506/507/506A/507A f A-j = 5 0 K H Z DAS H NOTES: A q = 100KHZ A 2 = 25KHZ

R2R Ladder Resistor Network

Abstract: ladder diagram for encoder MC1533 motorola amp op 2060 CD4046 ma702 MC1554 18 watt amplifiler A2J1 ca3130
Contextual Info: BURN-IN CIRCUITS HI-201 H I-2 0 0 T O -1 0 0 T a = +125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 0 0 2 F re q : = l O O K H z N O TES: T a = +125°C D 1 0 2 = IN 4 0 0 2 F re q : = l O O K H z HI -506/507/506A/507A f A-j = 5 0 K H Z DAS H NOTES: A q = 100KHZ

MPC16S

Abstract: H11-506A-5 AD7512 equivalent AM-452-2 HA2-2055-5 am-462-2 DG509 SHM1C1 am452-2 H12-200-2
Contextual Info: BURN-IN CIRCUITS HI-201 H I-2 0 0 TO-100 T a = +125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 0 0 2 F re q : = l O O K H z N O TES: T a = +125°C D 1 0 2 = IN 4 0 0 2 F re q : = l O O K H z HI -506/507/506A/507A DASH f NOTES: A q = 100KHZ A-j = 5 0 K H Z A 2 = 25KHZ

CA101T

Abstract: LM301 military
Contextual Info: Operational Amplifiers HARRIS S E M I C O N D U C T O R HA RRI S RCA - Gt CA101, C A 201, CA301A, LM201 *, LM301 A* INTERSIL M ay 1 9 9 0 Operational Amplifiers For C om m ercial, Industrial, and M ilitary Applications F eatures: A pplications: • S h o rt-c irc u it p ro te ctio n a n d la tc h -fre e operation

F9232

Abstract: 4dt 823 b chevalier Phoenix Contact 29 61 202 foster 81 - 22 Zeus Industrial Products zi 9512 78378 523233 harris 122015
Contextual Info: HARRIS SEMICONDUCTOR Sales Offices, Representatives and Authorized Distributors North American Sales Offices, Representatives and Authorized Distributors ALABAMA Harris Semiconductor 600 Boulevard South Suite 103 Huntsville, AL 35802 TEL: 205 883-2791 FAX: 205 883 2861

HMF06100

Abstract: "Harris microwave"
Contextual Info: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

cms 702

Abstract: foster 81 - 22 Zeus Industrial Products B1130 BA 6686 Taiwan Oasis Enterprise Co., LTD
Contextual Info: HARRIS SEMICONDUCTOR Sales Offices, Representatives and Authorized Distributors North American Sales Offices, Representatives and Authorized Distributors ALABAMA Harris Semiconductor 600 Boulevard South Suite 103 Huntsville, AL 35802 TEL: 205 883-2791 FAX: 205 883 2861

Contextual Info: HI-201 g HARRIS Quad SPS T C M O S Analog Switch S e p te m b e r 1991 Features D escrip tio n • Analog Voltage R a n g e .±15V HI-201 is a monolithic device comprising four independent­ ly selectable S P S T switches which feature fast switching

positioner 2-01

Abstract: K997 RG-142 m22520 YR2062 447920-2
Contextual Info: AMP Hex Crimp and Printed Circuit Board SMA Connectors Catalog 65198 Revised 4-94 Product Facts • Time-saving threecomponent assembly ■ Performance to 12.4 GHz ■ Uses industry standard crimp tools ■ Meets all performance requirements for MIL-C-39012

Contextual Info: 1\L0CK P i°JSB O DR A W I N G MA DE IN THIRD ANGLE PROJECTION THIS D R A W I N G I S UNPUBLISHED. BEL E A S E D F O R P U B L I C A T I O N REVISIONS .10 OQPYBISHT J8 BY INCORPORATED. HARRISBURG. P A . ALL INTERNATIONAL RIGHTS RESERVED. PRODUCTS MAY B E COVERED B Y

faston crimp height

Abstract: faston 250 crimp height
Contextual Info: 1|L0CAF DIST 50 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ,19 COPYRIGHT 19A? BY AMP INCORPORATED,HARRISBURG,PA„ ALL INTERNATIONAL RIGHTS RESERVED. AMP PRODUCTS MAY BE COVERED BY U.S. AND FOREIGN PATENTS AND/OR PATENTS PENDING.

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D 6.99 A - A B A MATERIAL: C O N N E C TO R -N YLO N U L 9 4 V - 0 GREEN . CONTACTS —0 .3 0 [ .0 1 2 ] THICK COPPER ALLOY ( 0 . 0 0 0 3 8 [ . 0 0 0 0 1 5 ] GOLD)

L165 equivalent

Abstract: LM675 equivalent TELEDYNE PHILBRICK 1022 TCA2465 equivalent 3573AM OPA512 equivalent PA25 burr-brown 3573AM PA12A equivalent PA12
Contextual Info: \ P O W E R O P E R A T IO N A L A M P L IF IE R S A D E* n I c R o t e c h » o l o EQUIVALENT/SECOND SOURCES g v H T T P : / / W W W . A P EX M I C R 0 T E C H . C 0 M APEX ALTERNATIVES FOR EXISTING DESIGNS PA26 page 223 (P/F) TEXAS INSTRUMENTS, BURR-BROWN

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S REVISIO N S RESERVED. LTR D E S C R IP T IO N DATE A 10/30/07 D DWN A PVD SS C\ D MATERIALS:

Contextual Info: •ô’D R A W I N G THfS MADE IN T H I R D A N C L t D R A W IN G IS U N P U B L IS H E D . C COPYRIGHT I S REbCRVED. AMP 3 P R O . ' E C T iO N PRODUCTS 2 19 R E L E A S E D F O R F U B LI C A T I O N ] R E V IS IO N S L . BY A M P INCORPORATED, HARRISBUHG, PA .

Contextual Info: ACS03MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NAND Gate with Open Drain January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Harris’ QM Plan

Contextual Info: 2 HARRIS H M R -1 0 5 0 4 GaAs MMIC Amplifier 0 .5 -3 .0 GHz PRODUCT DATA Features * Active Bias Eliminates Need for Off-Chip Chokes Ti/Pt/Au Gate Metallization for Enhanced Reliability * On-Chip Source Resistor Network for Easy Bias Point Selection Dielectric Scratch/Short Circuit Protection

ha5100

Abstract: ha-5100 HA-5160 pins for analogue switch by harris sample hold AN543 HI-201HS MP10 HI201HS intersil AN543
Contextual Info: New High Speed Switch Offers Sub-50ns Switching Times Application Note Introduction An ideal CMOS analog switch would exhibit such characteristics as zero resistance when turned on, infinite resistance when turned off, zero power consumption, and zero switching time. Unfortunately, such a device is usually

HMF-06000

Abstract: HMF-06020 HMF06 HMF0600
Contextual Info: 2] HARRIS HMF-06020 Power Optimized G aAs FET 2-14 GHz PRODUCT DATA Features • +24.5 dBm Output Power with 7.5 dB Associated Gain at 8 GHz • Chip Devices are Selected from Standard M ilitary Grade Wafers • Power Optimized Design Provides High Power-Added Efficiency

10504

Abstract: MARKING AG MIC
Contextual Info: HARRI S Mill SEMICONDUCTOR HARRIS 4bE D 1+30221^ Q0002b3 2 BI HMS H M R -10504 GaAs MMIC Amplifier 0.5 - 3.0 GHz PRODUCT DATA Features • Active Bias Eliminates Need for Off-Chip Chokes Ti/Pt/Au Gate Metallization for Enhanced Reliability * On-Chip Source Resistor Network for Easy