20100920A Search Results

20100920A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MKE 11R600DCGFC ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with SiC Diode Boost topology ISOPLUS i4™ 3 Electrically isolated back surface 2500 V electrical isolation SiC D 4 1 1 E72873 T 2 Features MOSFET T Symbol Conditions	Original	11R600DCGFC E72873 20100920a	PDF
MKE11R600DCGFC Abstract: E72873 12 mke Contextual Info: MKE 11R600DCGFC CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω with SiC Diode Boost topology Electrically isolated back surface 2500 V electrical isolation ISOPLUS i4™ 3 SiC D 4 1 1 T 2 Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	11R600DCGFC 00DCGFC 20100920a MKE11R600DCGFC E72873 12 mke	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: MKE 11R600DCGFC ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with SiC Diode Boost topology ISOPLUS i4™ 3 Electrically isolated back surface 2500 V electrical isolation SiC D 4 1 1 E72873 T 2 Features MOSFET T Symbol Conditions

Original

11R600DCGFC E72873 20100920a

PDF

MKE11R600DCGFC

Abstract: E72873 12 mke
Contextual Info: MKE 11R600DCGFC CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω with SiC Diode Boost topology Electrically isolated back surface 2500 V electrical isolation ISOPLUS i4™ 3 SiC D 4 1 1 T 2 Symbol Conditions VDSS TVJ = 25°C Maximum Ratings

Original

11R600DCGFC 00DCGFC 20100920a MKE11R600DCGFC E72873 12 mke

PDF