2012 FOOTPRINT DIMENSION Search Results

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

MDT2012-CR1R0NDD

Contextual Info: AEC-Q200 Compliant MDT2012-CR Type Multilayer Ceramic chip power inductor DESCRIPTION ・The TOKO MDT2012 Series is an extremely low profile and miniature size multilayer ceramic chip power inductor with a maximum height of 1.0mm and with 2012 footprint 2.0mmx1.25mm .

Contextual Info: AN11183 Mounting and soldering of RF transistors in over-molded plastic packages Rev. 1 — 6 November 2012 Application note Document information Info Content Keywords Over-Molded Plastic OMP packages, heat sink, footprint, surface mount, reflow soldering, component handling, exposed heat spreader, SMDP,

Contextual Info: CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 P-Channel NexFET Power MOSFET Check for Samples: CSD75301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1mm x 1.5mm

Contextual Info: CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 P-Channel NexFET Power MOSFET Check for Samples: CSD75301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1mm x 1.5mm

Contextual Info: CSD13201W10 www.ti.com SLPS306 – MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13201W10 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint 1mm x 1mm Low Profile 0.62mm Height Pb Free RoHS Compliant

Contextual Info: 叠层片式电感器 Multilayer Chip Inductors MDT2012-CR Type FEATURES／特長 • Miniature size: 2012 footprint 2.0mmx1.2mm and low profile(1.0mm max. Height)  Magnetically shielded  Ideal for a variety of DC-DC converter Inductor application

Contextual Info: CSD13201W10 www.ti.com SLPS306 – MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13201W10 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint 1mm x 1mm Low Profile 0.62mm Height Pb Free RoHS Compliant

Contextual Info: CSD25211W1015 SLPS296 – FEBRUARY 2012 www.ti.com P-Channel NexFET Power MOSFET Check for Samples: CSD25211W1015 FEATURES 1 • • • • • • • • • PRODUCT SUMMARY Ultra Low On Resistance Ultra Low Qg and Qgd Small Footprint 1.0mm x 1.5mm Low Profile 0.62mm Height

Contextual Info: SERIES: VFSD1-SIP date 09/05/2012 page 1 of 6 DESCRIPTION: DC-DC CONVERTER FEATURES • 1 W isolated output • industry standard pinout • unregulated • • • • • • single output 5~24 V small footprint 3,000 V isolation short circuit protection

Ultra Low Qg

Contextual Info: CSD25211W1015 SLPS296 – FEBRUARY 2012 www.ti.com P-Channel NexFET Power MOSFET Check for Samples: CSD25211W1015 FEATURES 1 • • • • • • • • • PRODUCT SUMMARY Ultra Low On Resistance Ultra Low Qg and Qgd Small Footprint 1.0mm x 1.5mm Low Profile 0.62mm Height

Contextual Info: SERIES: VIFSD1-SIP date 09/04/2012 page 1 of 5 DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • • • • • • isolated 1 W output regulated single voltage output small footprint industry standard pinout UL94-V0 package no heatsink required

Contextual Info: CSD25211W1015 SLPS296 – FEBRUARY 2012 www.ti.com P-Channel NexFET Power MOSFET Check for Samples: CSD25211W1015 FEATURES 1 • • • • • • • • • PRODUCT SUMMARY Ultra Low On Resistance Ultra Low Qg and Qgd Small Footprint 1.0mm x 1.5mm Low Profile 0.62mm Height

MDT2012CR

Abstract: MDT2012-CR
Contextual Info: Multilayer Power Inductors 積層パワーインダクタ MDT2012-CR Type FEATURES／特長 • Miniature size: 2012 footprint 2.0mmx1.2mm and low profile(1.0mm max. Height) • Magnetically shielded • Ideal for a variety of DC-DC converter Inductor application

Contextual Info: 2012-10-10 SMARTLED Datasheet Version 1.1 Replacement in due course LW L28G Features: Besondere Merkmale: • Package: SMT footprint 0603, colored diffused resin • Technology: ThinGaN • Viewing angle at 50 % IV: 170° (horizontal); 130° (vertical) • Color: Cx = 0.32, Cy = 0.28 acc. to CIE 1931

Contextual Info: SERIES: VFSD1-DIP date 09/05/2012 page 1 of 6 DESCRIPTION: DC-DC CONVERTER FEATURES • 1 W isolated output • industry standard 14 pin DIP package • unregulated • • • • • • single output 3.3~24 V small footprint 3,000 V isolation short circuit protection

Contextual Info: SERIES: VIFSD1-DIP date 09/04/2012 page 1 of 5 DESCRIPTION: DC-DC CONVERTER FEATURES • · · · · · · · · · · isolated 1 W output regulated single voltage output small footprint industry standard pinout UL94-V0 package no heatsink required 3,000 Vdc isolation

Contextual Info: date 08/17/2012 page 1 of 5 SERIES: VOF-45 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • • up to 45 W continuous power industry standard footprint universal input 85~264 Vac single output from 3.3~48 V user trimmable output voltage

Contextual Info: CSD96371Q5M www.ti.com SLPS299 – DECEMBER 2012 Synchronous Buck NexFET Power Stage FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • 1 2 92% System Efficiency at 30A High Frequency Operation Up To 2MHz High Density – SON 5-mm x 6-mm Footprint

Contextual Info: CSD96371Q5M www.ti.com SLPS299 – DECEMBER 2012 Synchronous Buck NexFET Power Stage FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • 1 2 92% System Efficiency at 30A High Frequency Operation Up To 2MHz High Density – SON 5-mm x 6-mm Footprint

SMD TRANSISTOR MARKING 2e

Abstract: 2e SMD PNP TRANSISTOR
Contextual Info: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

npn transistor footprint

Contextual Info: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.