2014S Search Results

Contextual Info: 2014 Vishay Intertechnology, Inc. SUPER 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 2 WSLP High-Power Surface-Mount Power Metal Strip Current Sensing Resistor TMBS® in SMPA Trench MOS Barrier Schottky Rectifiers in

QUAD HIFREQ

Contextual Info: 2014 Vishay Intertechnology, Inc. Super 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 WSLp 2 SmpAパッケージのTmBS 3 prAhT 4 高電力表面実装型Power Metal Strip 電流検出抵抗器 薄型SMPA パッケージのTrench MOSバリア・ショットキー

UU 126 CORE

Abstract: uu1116 UU93 uu1116s UU CORE SQ2014 uu 10.5
Contextual Info: SAMWHA ELECTRONICS SQ, SQE, UU CORES SQ17~SQ40 SQE20~SQE35 UU10~UU93 Ordering Code System SM-100 Material Core Type SQ 2014S Core Size 107 108 SAMWHA ELECTRONICS SQ, SQE CORES SQ1715S Part No. Type SQ Core Set Parameters Electrical Characteristics SQE SQ2115S

Contextual Info: Tecate Group Film Capacitors TYPE 2014S POLYPROPYLENE FILM & FOIL RADIAL DIP, SERIES WOUND, HV POLYPROPYLENE OPP SPECIFICATIONS Performance Characteristics Operating Temperature -25°C ~ +85°C. Range Voltage Range 1000, 1250, 1600, & 2000VDC. Capacitance Range

1600WVDC

Abstract: Tecate Group
Contextual Info: Tecate Group POLYPROPYLENE FILM & FOIL RADIAL DIP, SERIES WOUND, HV POLYPROPYLENE OPP TYPE 2014S SPECIFICATIONS Performance Characteristics Operating Temperature -25°C ~ +85°C. Range Voltage Range 1000, 1250, 1600, & 2000VDC. Capacitance Range 0.001µF ~ 0.33µF.

Contextual Info: POLYPROPYLENE FILM CAPACITORS TYPE 2014S 2014S capacitors are good for pulse and high frequency applications, with their low dissipation factor. High insulation resistance under high humidity conditions. GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -25°C to +85°C

Contextual Info: POLYPROPYLENE FILM CAPACITORS TYPE 2014S 2014S capacitors are good for pulse and high frequency applications, with their low dissipation factor. High insulation resistance under high humidity conditions. GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -25°C to +85°C

Contextual Info: Reference Design Manual DN[Document ID] NFCC Reference Board AS3911-QF-RD-NFCC ams Reference Design Manual, Confidential [v1-00] 2014-Sep-12 Page 1 Document Feedback NFCC Reference Board Table of Contents 1 Introduction . 4

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

MTL ICC 317

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage

MMRF1019NR4

Contextual Info: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

8029L

Abstract: MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S
Contextual Info: ICs/LSIs for VCR, Camera • For 8mm VCR O p e ra tin g V o lta g e C a te g o ry V ideo signal p ro c e s s o r A udio signal p ro c e s s o r S erv o c o n tro l F u n c tio n s P ro c e s s T y p e N o. P ackage V N o. M N 6173S 5 CM OS C h ro m a s ig n a l p ro c e s s in g

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

24-7S

Abstract: 2211P 2211S 2213p
Contextual Info: 151-2012:QuarkCatalogTempNew 8/20/12 1:17 PM Page 151 2 Circular Power Connectors — 97 Series TEST & MEASUREMENT MIL-C-5015 Style Types A and B See page 144 for dimension table. RoHS Non-Compliant standard finish no deviation code of olive drab chromate over cadmium

Contextual Info: - 94 AN 2458SH PAL/NTSC^st*^'* = 7 — • ^ > 3 — ^'IC •St * A N 2 4 5 8 S H Ü , ' I ' i l - f f i H f i t i l 9 -Í V ^ P A L / N T S C t T Ä « i^i-^ 7 -ÿ — •3 - > - i —y \ c . • tK— 9 - T j v * V - T ' - t ' X S ti X • U— • ig i^ itF E : 4 .8V (typ

Contextual Info: Document Number: MMZ25332B Rev. 2, 5/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier

RR1220P-102-D

Abstract: D58764 HSF-141C-35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR

TUI-lf-9

Abstract: ATC700B392JT50X
Contextual Info: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V

Contextual Info: Document Number: MMRF1310H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, industrial including laser and plasma exciters , broadcast (analog and digital),

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S140W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base