2048X8 Search Results

27S191

Abstract: 27S291 ls291 27S190 27S29
Contextual Info: Am27S190/27S191/PS191/LSl91 Am 27S290/27S291/PS291/LS291 16,384-Bit 2048x8 Bipolar PROM • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction (27PS devices) Plug in replacem ent for industry standard product — no

Am27C291

Contextual Info: ADV M IC R O 14E D I MEMORY 0 5 S 7 S a a 0 0 2 7 7 0 0 _4 | -z s A m 2 7 C 1 9 1 /A m 2 7 C 2 9 1 16,384-Bit 2048x8) High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed <25 ns)/Low-Power (60 mA) C M O S E P R O M Technology

eeprom 25080

Abstract: 25080 948AL CAT25080 CAT25160 Q100 25080 eeprom 1024x8
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

25c08v

Abstract: 25C16LI CAT25160 25C16VI 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16 25C08L
Contextual Info: Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.

xicor X2816A

Abstract: X2816AM X2816A X2816AM-35 X2816AM-45 x2816
Contextual Info: t 16K Military X2816AM a r ç 2048x8 Bit _ Electrically Erasable PROM_ FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data

a7w 80

Abstract: W2416-70L a7w 16 W2416 W2416-10L W2416K-70 A7W 13 a7w 35 a7w 60 A7W AG
Contextual Info: Al/G 1 5 IttZ W2416 IVinbond 2K X 8 CMOS STATIC RAM DESCRIPTION FEATURES The W2416 is a High Speed, Low Power CMOS • Low Power Consumption : Active : 250mW Typ. Static RAM Organized as 2048X8 Bits Standby : 10/zW(Typ.)- L-Version Operates on a Single 5-Volt Supply. It is

27S45

Abstract: 27S47A AM27S45A AM27S45 27S45A AM27S47A am27s47 27S45SA 27s47 AM27S45SA
Contextual Info: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA AdJfed 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input Micro vices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 10 ns clock-to-output delay

25c08v

Abstract: 25C16VI 25C16V cat25c08 25Y08 24C168
Contextual Info: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/

Contextual Info: ADV MICRO M E M OR Y 1ME D | 0257553 0 0 2 7 5=1 0 1 | A m 9 1 2 8 2048x8 Static RAM Devices DISTIN C TIVE CHARA CTERISTICS • • • Logic voltage levels compatible with TTL Three-state output buffers and common I /O Ice Max., as low as 100 mA • • ¡AA^ACS as low as 70 ns

AM27S45

Abstract: 27s47 am27s47 AM27S45A am27s47a 27S45 27S47A 27S45A AM27S45s Am27S47/27S47A
Contextual Info: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA 7J Advanced 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input D Micro evices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay

27S45

Abstract: AM27S45
Contextual Info: Am27S45/Am27S47 a 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS "S A " version offers superior performance with 25 ns setup time and 10 ns ciock-to-output delay* Slim, 24-pin, 300-mil lateral center package occupies

AM27C191

Contextual Info: Am27C191 /Am27C291 Advanced Micro Devices 16,384-Bit 2048x8 High-Performance CMOS PROM DISTINCTIVE CHARACTERISTICS High-speed (25 ns)/Low-Power (60 mA) CMOS EPROM Technology 5-Volt ±10% power supplies for both Commercial and Military Direct plug-ln replacement for Bipolar PROM* —

Contextual Info: a Am9128 AduS 2048x8 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • Logic voltage levels compatible with TTL Three-state output buffers and common I/O Ice Max., as low as 100 mA • • tAA^ACS as low as 70 ns Power-Down mode Isb as low as 15 mA

AM27S191

Abstract: 27ps191 AM27S291PC AM27S291 AMD PROM Selector guide 27ps291 LS00 5188
Contextual Info: a Am27S191 /SI 91A/S191SA/PS191 /PS191A Am27S291 /S291A/S291SA/PS291 /PS291A Advanced Micro Devices 16,384-Bit 2048x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS Piatinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming

Contextual Info: •> GOULD AMI Semiconductors S6516 Preliminary Data Sheet 16,384 BIT 2048x8 STATIC CMOS RAM February 1985 Features □ Fast Access Time □ Low Power Standby □ Low Power Operation □ On-Chip Address Registers □ Low Voltage Data Retention -2 V □ Fully TTL Compatible Inputs

25160D

Abstract: eeprom 25080 25080 eeprom
Contextual Info: CAV25080, CAV25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAV25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

2048x8 RAM

Abstract: 6216 static ram
Contextual Info: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec

53RS1681A

Abstract: 128X128 53RS1681 63RS1681 63RS1681A 98GENERAL
Contextual Info: a 53/63RS1681/A Advanced Micro Devices 2048x8 High Performance Registered PROM with Synchronous Enable APPLICATIONS FEATURES/BENEFITS • Synchronous output enable • Microprogram control store • Edge-triggered “D” registers • Versatile 1:16 user programmable Initialization

25160D

Abstract: s08d 25080D CAT25080YE-G eeprom 25080 UDFN8 254
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

27S291

Abstract: 27s191 AM27LS191 Am27S
Contextual Info: Am27S190/27Sl91/PS191/LS191 Am 27S290/27S291 /PS291 /LS291 16,384-Bit 2048x8 Bipolar PROM Piatinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming yields (typ > 98%) Voltage and temperature compensated providing ex­

25160D

Abstract: eeprom 25080
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

eprom 2716

Abstract: S6831B
Contextual Info: ANI _ S6831B AMERICAN M IC R O S Ÿ S ÎÊ M S riN C .^— — 16,384 BIT 2048x8 STATIC NMOS ROM Features General Description 11 Single + 5V Power Supply The AMI S6831B is a 16,384 bit mask programmable Read-Only-Memory offering fully static operation with a

rom 2716

Abstract: memory EPROM 2708 eprom 2716 2708 eprom 2716 eprom 128X128
Contextual Info: 16,384 Bit 2048x8 Static NMOS ROM •> GOULD Electronics S68A316 Features General Description □ F a s t A d d re s s A c c e s s Tim e: S 68A 316 - 350ns Maxim um □ E P R O M Pin C o m p a tib le The G ould S 6 8 3 1 6 fam ily of 16,384 bit m ask program m a­

AM9128-10

Abstract: AM9128-12 AM9128-15 AM9128-20 AM9128-70 AM9128-90
Contextual Info: Am9128 2048x8 Static RAM DISTINCTIVE CHARACTERISTICS Logic voltage levels compatible with TTL Three-state output buffers and common I/O ic e Max., as low as 100 mA • • tAA/ t ACS as low as 70 ns Power-Down mode lSB as low as 15 mA ' GENERAL DESCRIPTION