2048K EPROM Search Results

EPROM 271024

Abstract: 271024 271024 eprom 8F57 27C1024 J40AQ NMC27C2048Q150
Contextual Info: PRELIMINARY NMC27C2048 2,097,152-Bit 128k x 16 UV Erasable CMOS PROM General Description Features The NMC27C2048 is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­

27C128

Abstract: 27C256 27C512 NMC27C020
Contextual Info: PRELIMINARY NMC27C020 National Semiconductor NMC27C020 2,097,152-Bit 256k x 8 UV Erasable CMOS PROM General Description Features The NMC27C020 is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­

M27C2001-15F1

Abstract: 27c2001 M27C2001
Contextual Info: SGS-THOMSON M27C2001 IL I 2048K 256K x 8 CMOS UV EPROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 jiA. PROGRAMMING VOLTAGE 12.75V.

27C2001

Abstract: m27c2001-15f1
Contextual Info: SCS-THOMSON itLiOTTIËMOtgi M27C2001 2048K 256K x 8 CMOS UV EPROM • VERY FAST ACCESS TIME : 120 ns. ■ COM PATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO W AIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 |aA.

Contextual Info: NATL SENICOND -CNENORY} 10E D I bSDiisy aohiST? e | National Semiconductor T -4 6 -1 3-25 - PRELIMINARY NMC27C020 2,097,152-Bit 256k x 8 UV Erasable CMOS PROM General Description Features The NMC27C020 Is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

IS25LQ016-JBLI

Contextual Info: 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface IS25LQ016 FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit

Contextual Info: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit

IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit

Contextual Info: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V PRELIMINARY DATASHEET • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit

IS25LQ016-JBLI

Abstract: IS25LQ016
Contextual Info: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit

2046K

Abstract: 28F020 SmartDie 29024
Contextual Info: in t e * 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 /xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical

Contextual Info: Pm25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - Pm25LQ016: 2048K x 8 16 Mbit

Contextual Info: Pm25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - Pm25LQ016: 2048K x 8 16 Mbit

Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

Contextual Info: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit

Contextual Info: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit

P28F020-150

Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read

Contextual Info: DPZ2MS16P □PM Dense-Pac Microsystems, Inc. O 2048K X 16 FLASH MEMORY MODULE PRELIMINARY D ESC RIPTIO N : The DPZ2M S16P is a 32 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices

SSC16E

Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program

Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program

28F020

Abstract: 80C186 80c186 specification update
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read

n28f020-150

Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read