205MAX Search Results

2SD2155

Abstract: 2SB1429 55NO
Contextual Info: 2SB1429 * < 4 • mm 205MAX. • « it m -r r , • 2 S D 2 1 5 5 ¿ 3 ' y - f > > y 9 'J K .t£ * l i * » • 100W : vC EO - - i 8 o v a * * ) 7 r A * - 7 r .f * T iX S tt (T.-2S1C ) a C o a w ? * • *< - * M * i£ «Í ff * «L * vCBO -180 V VCEO -180

2sa1553

Abstract: TOSHIBA 2SA1553
Contextual Info: TOSHIBA Discrete Semiconductors 2SA1553 Transistor Unit in mm 205MAX Silicon PNP Epitaxial Type PCT Process #3-3 ±0.2 For General Purpose Switching and Amplifier Applications Features • Complementary to 2SC4029 • Recommended for 120W High Fidelity Audio Frequency Amplifier

2SB 545

Contextual Info: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Amplifier Com plem entary Pair with 2SD1975 Package Dim ensions • Features ■ • Very good linearity of DC current gain • Wide area of safety operation ASO • High transition frequency (fT)

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)

Contextual Info: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : |Yfg| = 5.0S Typ. Complementary to 2SK1530

FLW122

Abstract: ultrasonic flowmeter sensor JEMIS-032 ultrasonic flow meter FLW410 ultrasonic flowmeter flowmeter FLD22 RG58A/U flowmeter ultrasonics
Contextual Info: SERIES ULTRASONIC FLOWMETER < S Standard Type > FLV•··3, FLW···2, FLD···1 DATA SHEET This flowmeter is a clamp-on type ultrasonic flowmeter based on transit-time measuring method. Thanks to mi croprocessor based electronics, the flowmeter can be easily

2SC3307

Abstract: 2-21F1A
Contextual Info: TOSHIBA 2SC3307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3307 HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times

Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • M A X IM U M RATINGS Ta = 25°C CARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current