206AA Search Results

2N3797

Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D

2N2844

Abstract: 2N2843
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3b755M OOflbbOS 1 | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA 3 Drain (Case) MAXIMUM RATINGS Sym bol V a lu s U n it Drain-Source V olta g e Rating VDS 30 V dc Drain-Gate V oltage Vd g 30 V dc Gate-Source V olta g e

TO206AA

Abstract: SD1106 SD1106AD SD1106CHP SD1106DD to-206aa
Contextual Info: TOPAZ SEMICONDUCTOR OSE I | "iOflSHab 0001035 - :- a | T -2 9 -2 5 SD1106 SEMICONDUCTOR N - C H A ^ iL ENHANCEMSHWiiOSS D-MOS POWER FETs ORDERING INFORMATION SD1106CHP SD1106DD SD1106AD Sorted Chips In Waffle Pack TO-206AA TO-18) Package

2N3972

Abstract: 2N3971 2n3970 2N3971 motorola
Contextual Info: M OTOROLA SC XSTRS/R F 15E D | b3b?aS4 QGät.bl7 5 | 2N3970 , thru 2N3972 CASE 22-03, STYLE 4 TO-18 TO-206AA 2 Drain MAXIMUM RATINGS R ating Drain-Source Voltage Sym bol Value U n it VDS 40 Vdc Vdc Vdg 40 V g SR 40 Vdc Forward Gate C urrent •g f 50 m A dc

2N3012

Contextual Info: MOTOROLA SC XSTRS/R F igE D | b3b7ESM OOflba^O T | 2N3012 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage V cEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — Continuous

2N835

Abstract: transistor D 667 C
Contextual Info: MOTOROLA SC XSTRS/R 12E F D I b3fc.7254 O G ñ b 22 3 fc> | T-3SW3 2N835' CA S E 22-03, ST YLE 1 TO-18 TO-206AA MAXIMUM RATINGS Sym bol V a lu e Collector-E m itter V oltag e V C EO 20 Vdc C o llector-E m itter V oltag e VCES 30 Vdc C o llector-B ase V olta g e

2N6432

Abstract: 2N6432 MOTOROLA 2N6433
Contextual Info: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage

2N1711

Abstract: 2N956 2N718A X10-4 2N1711N
Contextual Info: 2N718A 2N956 M A X IM U M R ATINGS Rating Symbol 2N718A 2N956 2N1711 CASE 22-03, STYLE 1 TO-18 TO-206AA Unit C o lie ctor-E m itter V o ltage VCER 50 Vdc Collector-Base V o ltage v CBO 75 Vdc E m itter-Base Voltage Ve bo 7.0 3 , 3 C o lle c to r Vdc Total Device D issipation @ TA = 25°C

Contextual Info: MOTOROLA SC TXSTRS/R 6367254 FJ Tb MOTOROLA SC CXSTRS/R DE I L 3 L 7 5 S 4 D0fla3fe.7 96D F 82367 D T - ? 7 ' MM4257 MM4258 C A SE 22-03, STYLE 1 TO-18 TO-206AA) MAXIMUM RATINGS Rating Symbol MM4257 MM4258 Unit Collector-Emitter Voltage VCEO 6.0 12 Collector-Base Voltage

2N3438

Abstract: 206-AA
Contextual Info: MOTORCLA SC XSTRS/R 15E D F I babTasM opflbboa M I 2N3437 2N3438 CASE 22-03, STYLE 4 TO-18 TO-206AA 2 Drain Gate & C a s e / ^ Z j N •ti? MAXIM UM RATINGS Symbol Rating DraiivGate Vortage Gate-Source Vortage Gate Current Total Device Dissipation @ De rate above 25°C

Contextual Info: MSR2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,

Contextual Info: Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: • TO-18 TO-206AA , Surface mount UA & UB Packages Commerical JANS

V9390

Contextual Info: MOTOROLA SC 12E 0 I X ST RS /R F b3b?2SM OGflbSlO CV10440 | , CECC 50004-087 CASE 22-03, STYLE 1 TO-18 (TO-206AA) MAXIM UM RATINGS Sym bol Rating . Value Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage v ebo

2n2369a

Abstract: uA 741 IC OF IC 741 TO206AB
Contextual Info: TECHNICAL DATA MIL-PRF 2N2369A, U, UA, JAN, JTX, JTXV 2N2369AUB JAN, JTX, JTXV 2N4449, U, UA, JAN, JTX, JTXV QML DEVICES Processed per MIL-PRF-19500/317 NPN SWITCHING SILICON TRANSISTORS 2N2369A 2N4449 TO-18 TO-206AA TO-46 (TO-206AB) MAXIMUM RATINGS Ratings

10VDC

Abstract: MAX584 2n4352
Contextual Info: M O T O R OL A SC XSTRS/R F 12E D | b3b?2S4 G0flt?M3 T | MFE823 CASE 22-03, STYLE 11 TO-18 TO-206AA M A X IM U M RATINGS Symbol Rating Value U nit • 25 Vdc Drain-Source Voltage Vos Drain-Gate Voltage Vd G ±10 Vdc Id 30 mAdc PD 300 1.71 T j. Tstg - 6 5 to +175

2N3797

Abstract: 2N3796 2N3797 MOTOROLA 2N3798 transistor 2N3 V01TAGE
Contextual Info: 2N3796 2N3797 ' CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Symbol Rating Drain-Source Vortage Value Unit Vdc VDS 2N3796 2N3797 25 20 VGS ±10 Vdc Drain Current fD 20 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 258C PD 200 1.14 mW mW /X

Contextual Info: BSX20 M A X IM U M R A T IN G S R a tin g S ym bol V alue U n it C olle cto r-E m itte r Voltage VCEO 15 Vdc C o lle cto r-E m itte r Voltage RBE = 10 Ohms VCER 20 Vdc C ollector-Base Voltage VCBO 40 Vdc E m itter-Base Voltage CASE 22-03, STYLE 1 TO-18 (TO-206AA)

MSR2N2907A

Contextual Info: MSR2N2907A L Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907A(L) 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a TO-206AA package, is ideal to

2N2843

Abstract: 2N2844
Contextual Info: M OTORCLA SC XSTRS/R F 15E D | b3b?aSM 00abbg5 ^ | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA MAXIMUM RATINGS Symbol Valus Unit Drain-Source Voltage Rating VDS 30 Vdc Drain-Gate Voltage Vd g 30 Vdc Gate-Source Voltage Vg S 30 Vdc Drain Current Id

2n3946 npn transistor

Abstract: 2N915 TQ-206AA
Contextual Info: MOTOROLA SC XSTRS/R 15E F I b3b?ES4 {3Gflb52*i 7 | rW-oi 2N915 CASE 22-03, STYLE 1 TO-18 TQ-206AA MAXIM UM RATINGS Sym bol Value U nit Coliector-Emitter Voltage Rating VcEO 50 Vde Collector-Base Voltage VcBO 70 Vdo Emitter-Base Voltage Vebo 5.0 Total Device Dissipation @

B041

Abstract: lju sot23
Contextual Info: TELEDYNE COMPONENTS 5öE D • ÖT17^02 ÜÜ0b4ai 5 _ * l SD1200, SD1201 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION SD1200CHP Sorted Chip* In Conductive Waffle Pack TO-226AA TO-92 Packags TO-206AA (TO-18) Package

Contextual Info: 2N720A* CASE 22-03, STYLE 1 TO-18 TO-206AA MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO 80 Vdc C o lle ctor-E m itter Voltage VCER 100 Vdc Collector-Base V o ltage VCBO 120 Vdc Em itter-Base V o ltage Ve b o 7.0 Vdc PD 0.5 2.86

2N3962

Abstract: 2N3965 2N3964 2N3963 2N3962 MOTOROLA
Contextual Info: M O T O RO L A SC XSTRS/R F 1SE 0 I fc>3li7254 G0öb3öb 2N3962 - thru 2N3965 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M R A T IN G S Sym bol 2N3962 2N396S 2N3964 2N3963 ColJector-Em itter V oltag e V C EO 60 45 80 V Collector-B ase V oltag e VCBO 60

2N6430

Abstract: 2N6430 MOTOROLA
Contextual Info: MOTORCLA SC X S TR S /R 12E O § fc,3b?aS4 QOäbMSl fi | F r-yi-m 2N6430 2N6431 CASE 22-03, STYLE 1 TO-18 TO-206AA MAXIMUM RATINGS Rating Symbol 2N6430 2N6431 Unit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage Vcb O 200 300 Vdc Emitter-Base Voltage