207K AW Search Results

Contextual Info: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

207K AW

Contextual Info: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

s41 hall sensor

Abstract: Russian diode Transistor ML614S IC6001 FP99
Contextual Info: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM

transistor NEC D 882 p

Abstract: nec d 882 p datasheet SKR 50 a1275 MOS 6581 transistor NEC D 587 SI 356/2 diode nec d 882 p pwm Generator 2-423 NEC V30
Contextual Info: Design Manual CB-9 Family VX/VM Type Core Library 0.35 µm CMOS Cell-Based IC CBIC CPU Core, Memory Controller 78K/0 Core V851TM Core V853TM Core V30MXTM V30MZTM NB85E NB85E901 NB85ET NB85E500 NU85E500 NU85E502 Document No. A13195EJ5V1DM00 (5th edition)

vx 1937

Abstract: NB85E901 mos 6550 LIM EMS 4.0 NEC V30MX A12745E A13761E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid