20OCT08 Search Results

.110 faston tab

Abstract: 62514-1 POKE CTL1039-121 CTL1039-301-001
Contextual Info: 501-30 Qualification Test Report 20Oct08 Rev D MAG-MATE* Standard Terminals 1. INTRODUCTION 1.1. Purpose Testing was perform ed on MAG-MATE* standard term inals to determ ine their conform ance to the requirem ents of Product Specification 108-2012 Revision D.

JESD22-B102

Abstract: J-STD-002 P600 6KA24
Contextual Info: 6KA24 Vishay General Semiconductor Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Excellent clamping capability • Low leakage current • High surge capability

ZGL41-110

Abstract: ZGL41-200A DO-213AB JESD22-B102 J-STD-002 ZGL41-100
Contextual Info: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor

JESD22-B102

Abstract: J-STD-002 LCE10 LCE10A LCE11 LCE11A LCE12 LCE28A
Contextual Info: LCE6.5 thru LCE28A Vishay General Semiconductor Low Capacitance TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : 0.01 % • Excellent clamping capability

JESD22-B102

Abstract: J-STD-002 LVB14
Contextual Info: New Product LVB14A Vishay General Semiconductor Low VF Surface Mount Transient Voltage Suppressors FEATURES • Uni-directional polarity only • Peak pulse power: 600 W 10/1000 µs • Ideal for automated placement • Low forward voltage • Meets MSL level 1, per J-STD-020, LF

Contextual Info: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only

4 PIN IC Optocoupler with Phototransistor Output

Abstract: CNY64 CNY65 CNY66
Contextual Info: CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage repetitive VIORM = 1000 VRMS 64 • Thickness through insulation ≥ 3 mm 65 • Creepage current resistance according to

Contextual Info: SPICE Device Model Si7159DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

S8252

Abstract: si7198 82529
Contextual Info: SPICE Device Model Si7198DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Vishay VJ1206

Abstract: VJ0402 VJ0603 VJ0805 VJ1206 VJ1210 VJ1808 VJ1812 VJ2220 VJ2225
Contextual Info: Not for New Designs Product Discontinuation VJ BX Dielectric Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for TCC Critical Applications FEATURES • Designed for excellent T/VCC • Temperature voltage coefficient T/VCC RoHS COMPLIANT

d472k33y5ph6.j5r

Abstract: IEC 60 384 4 D223M39Z5UH6 d332 IEC 60 384 2 D223M39Z5 LV 100 V
Contextual Info: LV 100 V Vishay BCcomponents Ceramic Disc Capacitors Class 1 and 2, 100 V DC General Purpose FEATURES • Low losses • High stability D D e3 • High capacitance in small size • Kinked (preferred) or straight leads • Lead (Pb)-free available Tangent

24C208

Contextual Info: CAT24C208 8-Kb Dual Port Serial EEPROM FEATURES DESCRIPTION • Supports Standard and Fast I2C protocol* The CAT24C208 is an 8-Kbit Dual Port Serial CMOS EEPROM internally organized as 4 segments of 256 bytes each. The CAT24C208 features a 16-byte page write buffer and can be accessed from either of two

Contextual Info: BAT54AW Vishay High Power Products Schottky Rectifier, 2 x 0.1 A FEATURES 3 • Small foot print, surface mountable • Very low forward voltage drop 2 • Extremely fast switching speed for high frequency operation 1 A 1 • Guard ring for enhanced ruggedness and long term

DO-213AB

Abstract: JESD22-B102 J-STD-002 TGL41-200A TGL41-6
Contextual Info: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only

ISO7637

Abstract: DO-218AB ISO7637-2 JESD22-B102 J-STD-002 SM5A27 DO218AB
Contextual Info: SM5A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability

DO-204AL

Abstract: JESD22-B102 J-STD-002 P4KE530 P4KE550
Contextual Info: P4KE530 & P4KE550 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional only • Excellent clamping capability • Very fast response time DO-204AL DO-41 • Low incremental surge resistance

Contextual Info: ESDA6V1-5P6 5-Line TVS Array Peak Pulse Power 150 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 150 Watts Peak Pulse Power per Line(tp=8/20 s) * Monolithic Structure * Low Clamping Voltage * IEC Compatibility(EN6100-4) 61000-4-2(ESD): Air–15kV, Contact-8kV

5KA10

Abstract: 5KA10A 5KA11 5KA11A JESD22-B102 J-STD-002
Contextual Info: 1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Available in uni-directional polarity only • 1500 W peak pulse power capability with a

Contextual Info: P4KE530 & P4KE550 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional only • Excellent clamping capability • Very fast response time DO-204AL DO-41 • Low incremental surge resistance

Si4804CDY

Abstract: 82528 S-8252
Contextual Info: SPICE Device Model Si4804CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

MELF pad layout

Abstract: DO-213AB JESD22-B102 J-STD-002 TGL41-200A TGL41-6
Contextual Info: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only

Equivalent of P6KA18

Abstract: DO-204AC JESD22-B102 J-STD-002 P6KA10 P6KA10A P6KA43A
Contextual Info: P6KA6.8 thru P6KA43A Vishay General Semiconductor Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Available in uni-directional polarity only • 600 W peak pulse power capability with a

DO-218AB

Abstract: DO218AB SM6A27HE3 SM6A27 ISO7637 ISO7637-2 JESD22-B102 J-STD-002 ISO-7637-2
Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability

Contextual Info: LCE6.5 thru LCE28A Vishay General Semiconductor Low Capacitance TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : 0.01 % • Excellent clamping capability