20A 100 V LOW VF Search Results

Contextual Info: SBR20A300CT SBR20A300CTB SBR20A300CTFP Green 20A SBR SUPER BARRIER RECTIFIER Product Summary @TA = +25°C VRRM (V) 300 IO (A) 20 VF MAX (V) 0.92 Features and Benefits IR MAX (µA) 100 • Low Forward Voltage Drop  Excellent High Temperature Stability

Contextual Info: SBRT20U100SLP Green NEWINFORMATION PRODUCT ADVANCE Product Summary VRRM V IO (A) 100 20 20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI 5060 Features and Benefits VF(MAX) (V) @ +25°C 0.70 • IR(MAX) (mA) @ +25°C 0.3 Reduced ultra-low forward voltage drop (VF); better efficiency

STGW20NB60KD

Abstract: STMicroelectronics 0560
Contextual Info: STGW20NB60KD N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE VCES VCE sat (Max) @ 25°C IC @ 100°C STGW20NB60KD 600 V < 2.8 V 20 A • ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-LOSSES LOW GATE CHARGE

Contextual Info: Preliminary SGL20N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr= 50nS (Typ) APPLICATIONS * AC & DC Motor controls

SGL20N60RUFD

Contextual Info: CO-PAK IGBT SGL20N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls

Contextual Info: Preliminary Datasheet RJU36B1WDPF 360V - 20A - Dual Diode Ultra Fast Recovery Diode R07DS1135EJ0300 Rev.3.00 Dec 06, 2013 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)

SGH20N60RUFD

Contextual Info: CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls

Contextual Info: Preliminary SGH20N60RUFD CO-PAK IGBT FEATURES TO-3P * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) 1 APPLICATIONS * AC & DC Motor controls

Contextual Info: Preliminary Datasheet RJU3052SDPD-E0 360V - 20A - Single Diode Ultra Fast Recovery Diode R07DS0890EJ0100 Rev.1.00 Oct 29, 2012 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 20 A, di/dt = 100 A/s  Low forward voltage: VF = 1.4 V typ. (at IF = 20 A)

IRG7PH35UD1PbF

Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
Contextual Info: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA

transistor A6A

Abstract: 76T marking transistor A6A N
Contextual Info: PD - 97794 IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode

Contextual Info: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses

Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

irg7ph35u

Abstract: irg7ph35 ir igbt 1200V 40A 600v 20a IGBT
Contextual Info: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode

irg7ph35

Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
Contextual Info: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses

Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

IRG7PH35UD1MPBF

Contextual Info: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode

Contextual Info: IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA

Contextual Info: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode

20A igbt

Abstract: igbt 1200V 20A igbt 20A 1200v igbt 40a 600v current diode 600v 20a IGBT 600v 20a diode IGBT 120A 1200V diode 20khz DIODE 20A 600V
Contextual Info: PROVISIONAL IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Ultrafast npt IGBT Technology • 10 µs Short Circuit capability • Square RBSOA. • New Generation of Antiparallel diode with low Vf

ESAD92-02

Contextual Info: ESAD92-02 20A ( 200V / 20A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Low VF

TS906C2

Contextual Info: TS906C2 20A ( 200V / 20A ) Outline drawings, mm 4.5 ±0.2 3.0 ±0.3 9.3 ±0.5 1.32 1.5 Max 10 +0.5 0.9 ±0.3 LOW LOSS SUPER HIGH SPEED RECTIFIER +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features Surface-mount device Low VF

PA905C6

Abstract: SC-65 20A 100 V Low VF
Contextual Info: PA905C6 20A ( 600V / 20A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Low VF

F20UP20

Abstract: ultrafast DIODE
Contextual Info: FFB20UP20S Features • 20A, 200V, Ultrafast Diode Ultrafast recovery, Trr = 45 ns @ IF = 20 A • Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) The FFB20UP20S is an Ultrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use