20A 300V SCHOTTKY DIODE Search Results

D 16027 G

Contextual Info: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

D 16027 G

Contextual Info: CSD20030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 20A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

IXGA30N60C3C1

Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Contextual Info: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

Contextual Info: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

G30N60

Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
Contextual Info: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions

20A 300V Schottky Diode

Abstract: MC20200 diode schottky 400A 300V
Contextual Info: 677859^ ÛLTRÜNICS INC 3fi D E | b 7 7 f l S im DOODOn 3 ü T - 0 3 -/9 Data Sheet No. 28302 OLTRONICS, INC. 73 Tremont Street Boston, MA 02108 -T - 3 3 -en Power Schottky Diodes ® Tel. 617 354-6534 Semiconductor O.EM. 20 AMP, 200 Volt Power Schottky Rectifier

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

pj 69 diode

Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Contextual Info: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU

Contextual Info: Advantages of SiC Schottky Diodes in Fast Switching Power Electronics Solutions Michael Frisch, Vincotech GmbH, Unterhaching/Germany SiC is discussed as a future high performance replacement of the silicon power components. The new technology enables products with almost ideal behaviour. Currently, SiC Schottky rectifiers are already

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

APT0502

Contextual Info: APTDC20H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 20A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •

Contextual Info: APTDC20H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 20A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR3 CR1 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •

S4 44 DIODE schottky

Abstract: ntc1.0 AG QC TRANSISTOR
Contextual Info: APTC60HM70SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ Ω max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APT2X21DC60J APT2X20DC60J ISOTOP SiC Diode Power Module 2 2 3 1 4 VRRM = 600V IF = 20A @ TC = 100°C Application 3 • • • • Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features Anti-Parallel Anti-Parallel

Diode 400V 20A

Abstract: igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A
Contextual Info: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

"VDSS 800V" 40A mosfet

Contextual Info: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

Contextual Info: APTC60DDAM45CT1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual boost chopper Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • SiC Schottky Diode

Contextual Info: APTC60DSKM45CT1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery

Contextual Info: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery

Contextual Info: APT50GF60JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 600V IC = 50A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT

APT0406

Abstract: APT0502
Contextual Info: APTC60DSKM45CT1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery

schottky 400v

Abstract: APT0406 APT0502
Contextual Info: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery

APT0502

Contextual Info: APT50GF60JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 600V IC = 50A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT