20A IGBT Search Results

Contextual Info: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.

Contextual Info: FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 20A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Contextual Info: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance

FGA20N120FTD

Contextual Info: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V

G20N50c

Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
Contextual Info: HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs

Contextual Info: Ordering number : ENA2202 NGTG20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V Single TO-3PF-3L Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Enhansment type • Adaption of full isolation type package

n channel 600v 20a IGBT

Abstract: P3060 equivalent MP6752
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35|as Max. (Ic = 20A) t rr = 0.15|as (Max.) (Ic = 20A)

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35ps Max. (Ic = 20A) trr= 0 .1 5 ms (Max.) (Ic = 20A)

Contextual Info: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.2V @ IC = 20A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction

RGTH40TS65D

Contextual Info: RGTH40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching

equivalent MP6752

Abstract: MP6752 PW03020796 P channel 600v 20a IGBT
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35µs Max. (IC = 20A) trr = 0.15µs (Max.) (IC = 20A)

RGT40TS65D

Contextual Info: RGT40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 144W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

RGT40TS65D

Contextual Info: RGT40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 144W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

Contextual Info: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching

Contextual Info: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching

G20N50c

Abstract: G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1
Contextual Info: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR

GP19NC60S

Abstract: JESD97 STGP19NC60S
Contextual Info: STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60S 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
Contextual Info: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR

Contextual Info: RGT40NS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 161W lFeatures LPDS (TO-263S) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

GP19NC60SD

Abstract: JESD97 STGP19NC60SD
Contextual Info: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling

G20N50c

Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Contextual Info: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE

PJ 969 diode

Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode

HGTM20N50

Abstract: HGTM20N
Contextual Info: 3 HARRIS S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features • HGTH-TYPES JEDEC TO-218AC TOP VIEW 15A and 20A, 400V and 500V

IGBT CM20MD-12H

Abstract: CM20MD-12H E80276
Contextual Info: MITSUBISHI IGBT MODULES CM20MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM20MD-12H ¡IC . 20A ¡VCES . 600V ¡Insulated Type