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    20A IGBT Search Results

    20A IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GN6020V4LSTL-E Renesas Electronics Corporation IGBT 600V 20A Visit Renesas Electronics Corporation
    GN6020V4LSTL Renesas Electronics Corporation IGBT 600V 20A Visit Renesas Electronics Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    20A IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.


    Original     		PDF ENA2196 NGTB20N60L2TF1G A2196-8/8

    Untitled

    Abstract: No abstract text available
    Text: FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 20A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series


    Original     		PDF FGP20N60UFD O-220 FGP20N60UFD

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		PDF HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254

    FGA20N120FTD

    Abstract: No abstract text available
    Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V


    Original     		PDF FGA20N120FTD FGA20N120FTD

    G20N50c

    Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
    Text: HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs


    Original     		PDF HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D O-218AC HGTH20N50E1D G20N50c g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2202 NGTG20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V Single TO-3PF-3L Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Enhansment type • Adaption of full isolation type package


    Original     		PDF ENA2202 NGTG20N60L2TF1G A2202-7/7

    Untitled

    Abstract: No abstract text available
    Text: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.2V @ IC = 20A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction


    Original     		PDF FGH20N60SFD FGH20N60SFD

    RGTH40TS65D

    Abstract: No abstract text available
    Text: RGTH40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


    Original     		PDF RGTH40TS65D O-247 RGTH40TS65Dth R1102A RGTH40TS65D

    equivalent MP6752

    Abstract: MP6752 PW03020796 P channel 600v 20a IGBT
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35µs Max. (IC = 20A) trr = 0.15µs (Max.) (IC = 20A)


    Original     		PDF MP6752 PW03020796 equivalent MP6752 MP6752 PW03020796 P channel 600v 20a IGBT

    RGT40TS65D

    Abstract: No abstract text available
    Text: RGT40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 144W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


    Original     		PDF RGT40TS65D O-247 R1102A RGT40TS65D

    RGT40TS65D

    Abstract: No abstract text available
    Text: RGT40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 144W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


    Original     		PDF RGT40TS65D O-247N R1102A RGT40TS65D

    Untitled

    Abstract: No abstract text available
    Text: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


    Original     		PDF RGTH40TS65 O-247N R1102A

    Untitled

    Abstract: No abstract text available
    Text: RGTH40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


    Original     		PDF RGTH40TS65D O-247N RGTH40TS65th R1102A

    Untitled

    Abstract: No abstract text available
    Text: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


    Original     		PDF RGTH40TS65 O-247 R1102A

    GP19NC60S

    Abstract: JESD97 STGP19NC60S
    Text: STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60S 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling


    Original     		PDF STGP19NC60S O-220 GP19NC60S JESD97 STGP19NC60S

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
    Text: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR


    Original     		PDF HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D O-218AC HGTH20N50E1D 150oC G20N50c g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D

    Untitled

    Abstract: No abstract text available
    Text: RGT40NS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 161W lFeatures LPDS (TO-263S) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


    Original     		PDF RGT40NS65D O-263S) R1102A

    GP19NC60SD

    Abstract: JESD97 STGP19NC60SD
    Text: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling


    Original     		PDF STGP19NC60SD O-220 GP19NC60SD JESD97 STGP19NC60SD

    G20N50c

    Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
    Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE


    Original     		PDF HGTG20N50C1D O-247 500ns 150oC. AN7254 AN7260) 150oC 100oC G20N50c g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt

    IGBT CM20MD-12H

    Abstract: CM20MD-12H E80276
    Text: MITSUBISHI IGBT MODULES CM20MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM20MD-12H ¡IC . 20A ¡VCES . 600V ¡Insulated Type


    Original     		PDF CM20MD-12H E80276 E80271 IGBT CM20MD-12H CM20MD-12H E80276

    n channel 600v 20a IGBT

    Abstract: P3060 equivalent MP6752
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35|as Max. (Ic = 20A) t rr = 0.15|as (Max.) (Ic = 20A)


    OCR Scan     		PDF MP6752 PW03020796 n channel 600v 20a IGBT P3060 equivalent MP6752

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35ps Max. (Ic = 20A) trr= 0 .1 5 ms (Max.) (Ic = 20A)


    OCR Scan     		PDF MP6752 PW03020796

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    HGTM20N50

    Abstract: HGTM20N
    Text: 3 HARRIS S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features • HGTH-TYPES JEDEC TO-218AC TOP VIEW 15A and 20A, 400V and 500V


    OCR Scan     		PDF HGTH20N40C1, HGTM20N40C1, HGTP15N40C1, O-218AC O-220AB O-204AA HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTM20N50 HGTM20N