20DBRN Search Results

LM2527

Abstract: SO 042
Contextual Info: FLM252 7L-20 Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Rem Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation Tc = 25°C pt Storage Temperature

LD409

Abstract: LD809X LD2409 rj21 cable connector LD809 RJ21X LD1609 RJ-14 rj21 "Audio Connector"
Contextual Info: AudioCodes Enabling Technology Products SmartWORKS LD Series Next Generation Analog Passive/Active Telephony Card Designed for analog networks, the SmartWORKS™ LD has both passive and terminate network interface capabilities. Featuring programmable voltage thresholds and loop reversal detection,

fujitsu x band amplifiers

Contextual Info: FLM2527L-20 FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

1050M

Contextual Info: 19-1248; Rev 0; J V iÆ X A J V \ 650M H z to 1050M H z In te g ra te d O scilla to r w lih B uffered O utputs _ Applications Analog Cellular Phones Digital Cellular Phones .Features ♦ Low-Phase-Noise Oscillator: -110dBc/Hz 25kHz offset from carrier Attainable

Contextual Info: FLM2527L-20 fujTtsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riar|H = 34% (Typ.) Broad Band^2.5 - 2.7GHz Impedance Matched Zin/Zout = 50Q