20FEB06 Search Results
20FEB06 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AMP 1 4 7 1 -9 REV 3 1 M A R 2 0 0 0 1 2 LOC CE D IS T REVI SI ONS 16 LTR A 1. INSER TION LOS S: D E S C R IP T IO N DWN DATE RELEASED 20FEB06 1.0 0 dB APVD JWD DF MAX. D 2. PRODUCT AND PROCESSING MUST MEET REQUIREMENTS OF TYCO ELECTRONICS STANDARD 2 3 0 - 7 0 2 |
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20FEB06 600um, | |
Contextual Info: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr |
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Si5476DU 08-Apr-05 | |
Contextual Info: Si5424DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.024 at VGS = 10 V 6 0.030 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET APPLICATIONS 11 nC RoHS COMPLIANT D Load Switch – Notebook PC |
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Si5424DC 18-Jul-08 | |
micro switch BA-2r
Abstract: FIC093346 L145
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ABF5000 FIC093346 20FEB06 FORCE------14-22 FORCE-------10 micro switch BA-2r FIC093346 L145 | |
KBP210 bridge rectifier
Abstract: KBP210 KBP206 Bridge Rectifiers KBP-204 KBP206 KBP2005 KBP201 KBP202 KBP204
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KBP2005 KBP210 MIL-STD-202, 20-Feb-06 KBP210 bridge rectifier KBP210 KBP206 Bridge Rectifiers KBP-204 KBP206 KBP201 KBP202 KBP204 | |
SI5476DU-T1-E3
Abstract: Si5476DU
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Si5476DU 08-Apr-05 SI5476DU-T1-E3 | |
EA-XX-015DJ-120
Abstract: EP-08-015DJ-120 015EH constantan sa Series 015DJ
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015DJ EA-XX-015DJ-120 EP-08-015DJ-120 SA-XX-015DJ-120 SK-XX-015DJ-120 015EH 08-Apr-05 EA-XX-015DJ-120 EP-08-015DJ-120 constantan sa Series 015DJ | |
EP-08-062AK-120
Abstract: 062AP EA-XX-062AK-120 ED-DY-062AK-350 062AK
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062AK EA-XX-062AK-120 ED-DY-062AK-350 EP-08-062AK-120 062AP 08-Apr-05 EP-08-062AK-120 EA-XX-062AK-120 ED-DY-062AK-350 062AK | |
CEA-XX-062UW-350
Abstract: 062UW CEA-XX-062UW-120 strain Gages CEA strain gage
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062UW CEA-XX-062UW-120 CEA-XX-062UW-350 08-Apr-05 CEA-XX-062UW-350 062UW CEA-XX-062UW-120 strain Gages CEA strain gage | |
74147
Abstract: 74147 datasheet application notes of 74147 semiconductor 74147 p-channel mosfet Siliconix Si4567DY SI4567
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Si4567DY S-60243Rev. 20-Feb-06 74147 74147 datasheet application notes of 74147 semiconductor 74147 p-channel mosfet Siliconix SI4567 | |
Si4890DYContextual Info: SPICE Device Model Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4890DY 18-Jul-08 | |
Si7894ADPContextual Info: SPICE Device Model Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7894ADP 18-Jul-08 | |
SUR50N024-06P
Abstract: 73019
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SUR50N024-06P 18-Jul-08 SUR50N024-06P 73019 | |
Si4836DYContextual Info: SPICE Device Model Si4836DY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4836DY 18-Jul-08 | |
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Si7909DNContextual Info: SPICE Device Model Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7909DN 18-Jul-08 | |
Si4858DYContextual Info: SPICE Device Model Si4858DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4858DY 18-Jul-08 | |
Si4872DYContextual Info: SPICE Device Model Si4872DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4872DY 18-Jul-08 | |
Si4876DYContextual Info: SPICE Device Model Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4876DY 18-Jul-08 | |
Si7804DNContextual Info: SPICE Device Model Si7804DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7804DN 18-Jul-08 | |
TN0201KLContextual Info: SPICE Device Model TN0201KL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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TN0201KL 18-Jul-08 TN0201KL | |
Si4872DYContextual Info: SPICE Device Model Si4872DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4872DY S-60245Rev. 20-Feb-06 | |
Si7852DPContextual Info: SPICE Device Model Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7852DP S-60245Rev. 20-Feb-06 | |
MS75088
Abstract: dale molded inductors LT10K MS75087 MIL-PRF-15305 MS-75087
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MS75087 MS75088 MIL/PRF/15305 MS75087 18-Jul-08 MS75088 dale molded inductors LT10K MIL-PRF-15305 MS-75087 | |
Contextual Info: 4 THIS DRAWING IS U N PU BLISH ED . RELEASED COPYRIGHT 2 3 FOR PUBLICATION - - ALL RIGHTS RESERV ED . BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 REVISIO N S LTR DESCRIPTION C 27.10 [1.067 /6\D A TE CODE DATE REVISED PER ECO-06-026648 DWN 13NOV06 APVD |
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ECO-06-026648 13NOV06 20FEB06 31MAR2000 360x360x350 |