20V 60A POWER P MOSFET Search Results

AN-994

Abstract: IRF1104 IRF1104L IRF1104S IRL3103L
Contextual Info: PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 40V

Contextual Info: PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 40V

IRF110

Abstract: IRF1104L IRF1104S IRL3103L AN-994 IRF1104
Contextual Info: PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 40V

IRF1104

Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-144-32 IRF1104 HEXFET TO220 PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology

IRF1104

Contextual Info: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

40V 60A MOSFET

Abstract: IRF1104
Contextual Info: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

Contextual Info: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009" G ID = 100A… S Description

Contextual Info: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

Contextual Info: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

AN-994

Abstract: IRF1104 IRF1104L IRF1104S
Contextual Info: PD -91845 IRF1104S/L HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009Ω

AN-994

Abstract: IRF1104 IRF1104L IRF1104S
Contextual Info: PD -91845 IRF1104S/L HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009Ω

Contextual Info: AUIRFR8401 AUIRFU8401 AUTOMOTIVE GRADE HEXFET Power MOSFET Features  Advanced Process Technology  New Ultra Low On-Resistance 175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant

Contextual Info: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

75332s

Contextual Info: inter«! HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Ultras Th e se N -C hannel pow e r M O S F E Ts are m anu facture d u sing the innovative U ltraFET process. T h is a dvanced proce ss te ch n olo gy

D 92 M - 02 DIODE

Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Contextual Info: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

Contextual Info: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated

MOSFET N-CHANNEL 60v 60A

Abstract: 60n06 60n06l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom

SSP60N06

Abstract: SSp60n05 th250 mosfet n-channel 12 amperes
Contextual Info: N-CHANNEL POWER MOSFETS SSP60N06/05 FEATURES • Lower R d s <o n • Improved inductive niggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

RFG60P05E

Contextual Info: RFG60P05E in te fs il D a ta S h e e t J u ly 1 9 9 9 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0-030Q • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve

60N06

Abstract: of 60N06 60N06L-TA3-T transistor 60n06 30V 60A power p MOSFET 60N06-TA3-T mosfet p 30v 60a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: RFG60P06E
Contextual Info: interrii RFG60P06E D a ta S h e e t J u ly 1 9 9 9 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated

60N06

Abstract: datasheet of 60N06 60N06L-TA3-T 30V 60A power p MOSFET transistor 60n06 302010S ultra low power mosfet fast switching 30Atyp
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom

SSS60N06

Abstract: SSS60N05 MOSFET N 30V 30A 252 LO36 n-channel, 60v, 60a rj55 S-SS60
Contextual Info: N-CHANNEL POWER MOSFETS SSS60N06/05 FEATURES • Extermely Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance •Extended safe operating area • Improved high temperature reliability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at