20V N-CHANNEL POWER MOSFET Search Results

AN9321

Abstract: AN9322 RF1S45N02L RF1S45N02LSM RF1S45N02LSM9A RFP45N02L
Contextual Info: RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

AN7254

Abstract: AN7260 AN9321 AN9322 RFD16N02L RFD16N02LSM RFD16N02LSM9A
Contextual Info: RFD16N02L, RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

Contextual Info: ASSESS? RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022É1, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A,20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

RFP45N02L

Contextual Info: HARRIS S E M I C O N D U C T O R RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022D, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the

fp45n

Abstract: F45N02L AN9321 AN9322 RF1S45N02L RF1S45N02LSM RF1S45N02LSM9A RFP45N02L
Contextual Info: RFP45N02L, RF1S45N02L, RF1S45N02LSM S E M I C O N D U C T O R 45A, 20V, 0.022Ω, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the

A1 dual diode

Abstract: ZXMN2AM832 log sheet air conditioning MLP832 ZXMN2AM832TA ZXMN2AM832TC
Contextual Info: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure

Contextual Info: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure

DM13A

Abstract: log sheet air conditioning MLP832 ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC
Contextual Info: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure

FDV305N

Abstract: W-5-R
Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

sot 23-5 marking code fairchild

Abstract: MARKING PA TR SOT-23 marking 305 marking pk sot23 power trench sot-23 fairchild
Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

09A16

Abstract: FDV305N
Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

Contextual Info: HAJtms S RFD16N02L, RFD16N02LSM Semiconductor y 16A, 20V, 0.022É1, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

Contextual Info: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V

CBVK741B019

Abstract: F63TNR FDN371N MMSZ5221B
Contextual Info: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V

RFD16N02L

Abstract: RFD16N02LSM RFD16N02LSM9A AN7254 AN7260 AN9321 AN9322
Contextual Info: RFD16N02L, RFD16N02LSM S E M I C O N D U C T O R 16A, 20V, 0.022Ω, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

cq 724 g diode

Contextual Info: RFD16N02L, RFD16N02LSM HARRIS S E M I C O N D U C T O R 16A, 20V, 0.022Q, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

CMC lcd

Abstract: CMT9926G VGS-12V
Contextual Info: CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET GENERAL DESCRIPTION FEATURES ‹ 20V N-Channel Enhancement-Mode MOSFET ‹ Advanced trench process technology ‹ Vds=20V ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS ON =30 mΩ (TYP.) , VGS @2.5V, Ids@5.2A

UG 77A DIODE

Abstract: mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A
Contextual Info: PD - 9.1568A International IGR Rectifier IRF7317 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSFET î _8 IS 2 Voss • & P-Ch 20V -20V

LT2320E

Abstract: n-channel enhancement mosfet N-Channel Enhancement Mode 25v 55a
Contextual Info: LT2320E N-Channel Enhancement MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The LT2320E is the N-Channel logic enhancement mode power field ● 20V/6.5A, RDS ON =21mΩ@VGS=4.5V field effect transistors are produced using high cell density, DMOS ● 20V/5.5A, RDS(ON)=25 mΩ@VGS=2.5V

Contextual Info: LTC3605A 20V, 5A Synchronous Step-Down Regulator FEATURES n n n n n n n n n n n n n n DESCRIPTION High Eficiency: Up to 96% 5A Output Current 4V to 20V VIN Range Integrated Power N-Channel MOSFETs 70mΩ Top and 35mΩ Bottom Adjustable Frequency 800kHz to 4MHz

Contextual Info: AP4500GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low Gate Charge N-CH BVDSS D2 RDS ON D1 D1 ▼ Fast Switching Performance 20V 30mΩ ID G2 -20V P-CH BVDSS S2

MLP832

Abstract: ZXMP62M832 ZXMP62M832TA
Contextual Info: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure

IRF7E3704

Abstract: LCC-18
Contextual Info: PD - 94678 HEXFET POWER MOSFET SURFACE MOUNT LCC-18 IRF7E3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7E3704 20V RDS(on) 0.05Ω ID 12A* LCC-18 ® Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing