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    20V P-CHANNEL POWER MOSFET 500A Search Results

    20V P-CHANNEL POWER MOSFET 500A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    20V P-CHANNEL POWER MOSFET 500A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    AO4618

    Abstract: No abstract text available
    Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4618 AO4618

    Untitled

    Abstract: No abstract text available
    Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4618 AO4618

    Untitled

    Abstract: No abstract text available
    Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4618 AO4618

    Untitled

    Abstract: No abstract text available
    Text: DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device RDS ON max ID max TA = +25°C • 2 x N + 2 x P channels in a SOIC package • Low On-Resistance 45mΩ @ VGS = 10V 4.5A • Low Input Capacitance 4A • Fast Switching Speed


    Original     		PDF DMHC4035LSD AEC-Q101 DS36287

    AO4629

    Abstract: No abstract text available
    Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629 AO4629

    AO4629

    Abstract: a4751 20V P-Channel Power MOSFET 500A
    Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629 AO4629 a4751 20V P-Channel Power MOSFET 500A

    Untitled

    Abstract: No abstract text available
    Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629 AO4629 noted29

    AO4629L

    Abstract: No abstract text available
    Text: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629L AO4629L

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    Untitled

    Abstract: No abstract text available
    Text: DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 12mΩ @ VGS = 10V 10A 16mΩ @ VGS = 4.5V 8.5A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION Features and Benefits 30V •    0.6mm profile – ideal for low profile applications


    Original     		PDF DMN3016LFDE AEC-Q101 DS35900

    Untitled

    Abstract: No abstract text available
    Text: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling


    Original     		PDF DMG7430LFG AEC-Q101 DS35497

    Untitled

    Abstract: No abstract text available
    Text: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling


    Original     		PDF DMG7430LFG AEC-Q101 DS35497

    Untitled

    Abstract: No abstract text available
    Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4616 AO4616

    AO4616

    Abstract: 20V P-Channel Power MOSFET 500A
    Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4616 AO4616 20V P-Channel Power MOSFET 500A

    C3025LS

    Abstract: marking p1S marking c3025LS DS3582 DMHC3025LSD-13
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •


    Original     		PDF DMHC3025LSD AEC-Q101 DS35821 C3025LS marking p1S marking c3025LS DS3582 DMHC3025LSD-13

    C3025LS

    Abstract: diode n1s
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •


    Original     		PDF DMHC3025LSD AEC-Q101 DS35821 C3025LS diode n1s

    C3025LS

    Abstract: No abstract text available
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •  


    Original     		PDF DMHC3025LSD AEC-Q101 DS35821 C3025LS

    DS3205

    Abstract: No abstract text available
    Text: DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		PDF DMG8880LK3 AEC-Q101 O252-3L J-STD-020 O252-3L DMG8880LK3-13 DS32052 DS3205

    Untitled

    Abstract: No abstract text available
    Text: DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		PDF DMG8880LK3 AEC-Q101 O252-3L J-STD-020 DS32052

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    schematic diagram UPS ica

    Abstract: power mosfet 9505 sim welding diagram schematic diagram 24v UPS ic 4410 8pin inverter lg ig drive schematic diagram UPS ica ce 1200 full bridge igbt induction heating generator ups high power FET Transistor ic driver mosfet 8 pin 4413
    Text: iUIXYS IX B D 4410 1XBD4411 IXBD4412 1XBD4413 ISOSMART HALF BRIDGE DRIVER CHIPSET* Features 1 2 0 0 V o r G r e a t e r L o w -to H ig h -S id e Is o latio n . 20ns D riv e s P o w e r S y s t e m s O p e r a tin g O n U p to 5 7 5 V A C S w itc h in g T im e w ith 1 0 ,0 0 0 p F L o a d .


    OCR Scan     		PDF 1XBD4411 IXBD4412 1XBD4413 100pF 100ns IXBD4413 470QpF schematic diagram UPS ica power mosfet 9505 sim welding diagram schematic diagram 24v UPS ic 4410 8pin inverter lg ig drive schematic diagram UPS ica ce 1200 full bridge igbt induction heating generator ups high power FET Transistor ic driver mosfet 8 pin 4413