tcxo 108
Abstract: TCXO L TCXO 68 MHZ
Text: TC Type Stratum III Voltage Controlled Temperature Compensated Crystal Oscillator RoHS Compliant Standard FEATURE 1.Typical 7.0 x 5.0 x 1.85mm ceramic SMD package. 2.Stratum 3 Overall ±4.6PPM including 20years aging 3.CMOS and Clipped Sine wave Output Optional.
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20years
000MHzFo18
000MHz
000MHzFo30
000MHzFo52
00MHz
88MHz
100Hz
tcxo 108
TCXO L
TCXO 68 MHZ
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Untitled
Abstract: No abstract text available
Text: 5V CMOS TCXO Stratum 3 HTFH & HTVH Specifications Product Parameters HTFH HTVH Frequency range: 6.40 ~ 56.0MHz Calibration tolerance: ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years
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20years
100Hz
-135dBc/Hz
-150dBc/Hz
10kHz
100kHz
12kHz
440MHz
7360MHz
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS TCXO Stratum 3 HTFL & HTVL Specifications Product Parameters HTFL HTVL Frequency range: 6.40 ~ 56.0MHz Calibration tolerance: ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years
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20years
100Hz
-135dBc/Hz
-150dBc/Hz
10kHz
100kHz
12kHz
440MHz
7360MHz
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Untitled
Abstract: No abstract text available
Text: 5V CMOS TCXO Stratum 3 HTFH & HTVH Specifications Product Parameters HTFH ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years ageing, shock & vibration
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20years
-150dBc/Hz
10kHz
100kHz
440MHz
7360MHz
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS TCXO Stratum 3 HTFL & HTVL Specifications Product Parameters HTFL ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years ageing, shock & vibration
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20years
-150dBc/Hz
10kHz
100kHz
440MHz
7360MHz
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SI570
Abstract: Silabs Si571 SI570 PLL Si57x-EVB
Text: Si 5 7 0 / S i 5 71 10 MH Z TO 1.4 G H Z I 2C P ROGRAMMABLE XO/VCXO Features Any programmable output frequencies from 10 to 945 MHz and select frequencies to 1.4 GHz I2C serial interface 3rd generation DSPLL with superior jitter performance
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Si5602
Si570
XO/Si571
Silabs
Si571
SI570 PLL
Si57x-EVB
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MR25H10
Abstract: MR25H10C M25H1 MR25H10CDC M25H10 MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket
Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range
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MR25H10
MR25H10
576-bit
M25H10
MR25H10C
M25H1
MR25H10CDC
MR25H10M
mr25h10mdc
MR25H10CDCR
MO-229
DFN 10 socket
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PIC18F25J11
Abstract: PIC18F26J11 pic 18f26j11 PIC18f example codes CTMU PIC18F46J11 PIC18F24J11 DS39932D PIC18F usart init example PIC18 example C18 RTCC PIC16 lin bus example codes C
Text: PIC18F46J11 Family Data Sheet 28/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology 2011 Microchip Technology Inc. DS39932D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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PIC18F46J11
28/44-Pin,
DS39932D
DS39932D-page
PIC18F25J11
PIC18F26J11
pic 18f26j11
PIC18f example codes CTMU
PIC18F24J11
DS39932D
PIC18F usart init example
PIC18 example C18 RTCC
PIC16 lin bus example codes C
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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A29L008
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:
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A29L008
KbyteX15
SA10
SA11
SA12
SA13
SA14
SA15
SA16
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a29040al-70
Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29040A
a29040al-70
A29040A-55
A29040A-70
A29040AL
A29040AL-55
A29040AV-55
IN3064
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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JESD94
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
JESD94
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S25FL116K
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for
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Am29LV081
20-year
Am29LV081B-100
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
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Am29LV033C
63-ball
40-pin
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29F032B
Abstract: m29f032b
Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology
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Am29F032B
20-year
29F032B
29F032B
m29f032b
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known good die AMD
Abstract: No abstract text available
Text: SU PPLEM EN T Am29F200B Known Good Die AMDH 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% fo r read and w rite o perations — Minimizes system level power requirements
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Am29F200B
8-Bit/128
16-Bit)
Am29F200A
CS39S
known good die AMD
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am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F040B
Am29F040
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Untitled
Abstract: No abstract text available
Text: AMD£1 ADVANCE INFORM ATION Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents
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Am29F004B
29F004B
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AM29F032
Abstract: am29f032b-120 AM29F032B-90
Text: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F032B
20-year
40-pin
44-pin
AM29F032
am29f032b-120
AM29F032B-90
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24SA27
Abstract: AM29F017B
Text: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C
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29F016C
29F017B
24SA27
AM29F017B
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