210 TO92 Search Results

KTY 110

Abstract: kty 110 15 KTY 11-6 to92 mini Q62705-K332 KT 117
Contextual Info: SIEM ENS Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package KT 110, KT 210, KTY 11, KTY 21 Features Temperature dependent Resistor with Positive Temperature Coefficient Miniature plastic package for very small thermal time constants

KTY 110

Abstract: KTY 11-6 Q62705-K245 kty 110 15 KTY 21-6 transistor K246 KTY 11-7 Q62705-K334 k246 Q62705-K259
Contextual Info: Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package KT 110, KT 210, KTY 11, KTY 21 Features • Temperature dependent Resistor with Positive Temperature Coefficient • Miniature plastic package for very small thermal time constants

kty 110 15

Contextual Info: SIEMENS Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package K T 110, KT 210, KTY 11, KTY 21 Features • Temperature dependent Resistor with Positive Temperature Coefficient • Miniature plastic package for very small thermal time

2SA821

Contextual Info: 2SA821 -0.03A , -210 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   High Breakdown Voltage Low Transition Frequency G A 2SA821-P 2SA821-Q 82~180

TRANSISTOR bf493

Abstract: bf493 BF491 BF492
Contextual Info: BF491 THRU BF493 PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier Darlington Transistor * Power Dissipation: PD=625mW TO-92 .210 5.33 .170(4.32) .205(5.20) .175(4.45) 3 2 1 .082(2.082) .50(12.7MIN.) .078(1.982) .022(0.55)

2SA821

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210

datasheet of ic 555

Abstract: IC 555 2SA821
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO—92 FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range

2SA821S

Contextual Info: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V

Contextual Info: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14

2SA821S

Contextual Info: 2SA821S 2SA821S TO-92S TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SA821

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range

2SA821

Contextual Info: 2SA821 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: ED42_ J21 ED47_ _21_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S C R / D Í O d e IS O lS t & d POW-R-BLOK Module 210 Amperes/600-2000 Volts OUTLINE DRAWING _J T \_ Ï Ï T ED42 21, ED47 21 SCR/Diode Isolated

ST72A

Abstract: ST76A ST70A st74a SN 0727 TO 92 BS170 Field Effect Transistors 2N7000 TO-92 n-channel fet to-92 BST100
Contextual Info: Small Signal Leaded Devices Field Effect Transistors D -M O S FET Pkg Type ft yfs typ (mA/V) VGS (th) (V) *on max (ns) toff max (ns) 500 120 500 50 50 50 50 50 175 175 250 250 300 300 300 300 250 250 500 300 250 300 750 300 210 150 2.5 15 2.5 15 25 25 25

marking 4p sot23

Abstract: smd marking 271 Sot smd transistor marking n5
Contextual Info: Infineon tech n o Io g i e s Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 1 6-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-X KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient

smd transistor 2xX

Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

KTY 110

Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

Contextual Info: T em ic J/SSTJ210 Series S e m i c o n d u c t o r s N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number V G S off (V ) V ( b r )G SS M i n ( V ) gfe Min (mS) Idss Min(mA) 3 210 -1 to -3 -2 5 4 2 J /S S T J 2 U - 2 .5 to - 4 .5 -2 5

CK77

Abstract: 04831
Contextual Info: PACKAGE OUTLINES TO-5 0 .3 3 5 - 0 3 7 0 PIN T 1 E 0 .1 0 0 2 6 C 2 .5 4 0 3 0.200 / 15 0 8 0 ) YV ft (0 .4 0 6 - 0.4831 (0 2 2 9 - 3 . 1 7 5 ) T O - 18 0 .2 0 9 - 0 21 9 (5 3 0 9 - 5 5 6 3 ) 0 17 8 - 0.191 0 . 1 8 8 - 0 210 (4 .5 2 1 - 4 .8 5 1 ) (4 7 7 5 - 5 3 3 4 )

NTE107

Abstract: NPN Transistor TO92 NPN Silicon Epitaxial Planar Transistor to92 equivalent nte107
Contextual Info: NTE107 Silicon NPN Transistor UHF Oscillator for Tuner Description: The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.

npn 60V 600mw

Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
Contextual Info: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V

NTE234

Contextual Info: NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.

NTE2341

Abstract: npn darlington TO92 NTE2342
Contextual Info: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

to92 darlington

Abstract: nte232
Contextual Info: NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.