211021 Search Results

TQP7M9104

Abstract: Nelco N4000-13 0603CS-R12XJL b919 recommended land pattern for 6032 cap jedec 0603
Contextual Info: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3

7M9102

Abstract: schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9 TQP7M9102
Contextual Info: TQP7M9102 ½W High Linearity Amplifier Applications • •   Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features          Functional Block Diagram 400-4000 MHz

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

WiMAX transceivers

Abstract: ah225
Contextual Info: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

ofdm transceiver 900mhz

Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
Contextual Info: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure

Contextual Info: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3

Contextual Info: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package General Description GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 16 4 15 13 GND/NC RFout/Vcc

T25C

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

D6PE2G140P3AW

Abstract: FAR-D5PE-881M50-P3EY F6QG2G140P2KA JISC60068-2-21 G6QH2G140N2LA D6HH1G960BH97 F6KB2G595B4HS D5NG782M0M15Z F6KA2G436A4VE D5PE942M5P3GT
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

Contextual Info: DC Pass BDCN-15-25+ BDCN-15-25 Bi-Directional Coupler High Power, 50Ω 824 to 2525 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Current 0.5A Pin Connections INPUT 1 OUTPUT 4 COUPLED forward

Contextual Info: DC Pass BDCN-17-25+ BDCN-17-25 Bi-Directional Coupler High Power, 50Ω 824 to 2525 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Current 0.5A Pin Connections INPUT 1 OUTPUT 4 COUPLED forward

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MDR642E

Abstract: MDR747 MDR747F-
Contextual Info: COMPONENTS FOR WIRELESS SOLUTIONS for Bluetooth and 2.4GHz Wireless LAN, etc. IBand Pass Filter : MDR series [Low Insetion Loss Type] Type MDR641C Dimensions mm Frequency (MHz) Insertion Loss (dB) max. Attenuation (dB) min. L W T 2 4 0 0 -2 5 0 0 1.5 25 at 1750MHz, 25 at 2100MHz

AAN-232

Contextual Info: Model XDL21-6-117 Rev C Delay Line DESCRIPTION The XDL21-6-117 is a surface mount delay line that uses a slow wave coupling structure that maximizes the amount of delay per unit area over other distributed delay structures. The XDL21-6-117 can be used in amplifier linearization applications from 2110 – 2170MHz. The XDL21-6117 is ideal for use in the main loop of feed forward and in pre-distortion

Contextual Info: AH215 1 Watt, High Linearity InGaP HBT Amplifier Applications •  Final stage amplifiers for Repeaters Mobile Infrastructure SOIC-8 SMT Package Product Features  400 – 2300 MHz  18 dB Gain @ 900 MHz  +31.5 dBm P1dB  +46 dBm Output IP3 

RF power amplifier MHz

Contextual Info: Model X3DC21E2S Rev A Doherty Combiner b Description The X3DC21E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC21E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

diplexer gsm umts

Abstract: diplexer gsm DCS MASWSS0055 GSM 300 for c9 Tx, RX SHUNT16
Contextual Info: 2V Dual Mode WCDMA & Triple Band GSM/ V 1P.00 DCS/PCS SP6T Switch 0.5 - 2.0 GHz Features 5 mm FQFP-N, 20-Lead n GSM Power Handling with +2.0V Control Voltage n Low Power Consumption. Less than 1 µA in Rx Mode n Integrated Low Loss Diplexer n Integrated Decoder

Contextual Info: WSF-00154 3G Transmit Bandpass Filter ◆ Features: • Excellent Selectivity, >60 dB @ 2090 MHz, and >50 dB @ 2190 Bandedges ± 20 MHz • High Power Handling • Low Insertion Loss • Rejection to 3rd Harmonic ◆ Specifications: Passband: Passband Insertion Loss:

MAMXES0050

Abstract: diode 2140
Contextual Info: MAMXES0050 E-Series Surface Mount Mixer 2110 – 2170 MHz Features • • • • SM-87 Package LO Power +7 dBm Up to +1 dBm RF Surface Mount Low Profile Note: Non Hermetic Package Description M/A-COM’s MAMXES0050 is a Low Cost, Broadband, high performance Double Balanced Mixer designed for use in high

DEA202450BT-7116E1

Abstract: CSR BC4 DPX458976DT-0010A1 DEA202495BT-1242B2 uwb transceiver CU452A1F-3500-1TE2 cu452A1F-2600-1TE2 DEA252600BT-7098A2 DEA202450BT-2068A1 DEA202450BT
Contextual Info: Discover TDK Solutions Discover TDK Solutions RF Components for Wireless Applications RF Components for Wireless Applications For samples, datasheets and additional product information on these and other TDK Wireless Solutions . . . TDK RF Components & Services :

S1298

Abstract: 1318
Contextual Info: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial