2116 STATIC RAM Search Results

NMC2116-25L

Abstract: A7105 NMC2116-20 NMC2116N-25L NMC2116 nmc2116n-25 24 PIN EPROM
Contextual Info: fit March 1982 003580 S 3500 PRELIMINARY ^ NMC21TD ZU4Ö X ö Static RAM M ax A c c e s s /C u rre n t NM C 2116-20L NM C 2116-25L NMC2116-20 2 00 250 2 00 A c tiv e C u rre n t IC C — m A 70 70 100 S ta n d b y C u rre n t (IS B — m A ) 10 10 15 A c c e s s (T A V Q V — ns)

Contextual Info: ato M a rc h 1982 0035 80 PRELIMINARY S 3500 NMC21TD zu4ö X ö Static RAM M a x A c ce ss/C u rren t N M C 2 1 1 6 -2 0 L N M C 2 1 1 6 -2 5 L N M C 2116-20 200 250 200 A c tiv e C u rre n t IC C — m A 70 70 100 S ta n d b y C u rre n t (IS B — m A)

RCA 2116

Contextual Info: NOW / GE/RCA Products PART OF THE ^NEW H A R R IS S E M IC O N D U C T O R h a r r i^ 1 18 A 1 - 2 t 7 - A 6 < o o A O - CMM5104/3, CMM 5104/3Z High-Reliability, Radiation-Hardened CMOS/SOS 4096-Word by 1-Bit LSI Static RAM T 2J A2 - 3

Contextual Info: JB i MITSUBISHI LS Is ^ M 5 M 5 2 5 7 B P , J - 15 ,-17 ,-2 0 ,-2 5 , -2 0 L,- 2 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high-performance CMOS silicongate

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

STATIC RAM 2114

Abstract: RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116
Contextual Info: EDI8M32512CA ^EtECTBOMC E D L DEStGNS WC. m 512Kx32 Static Ram 512Kx32 CMOS, High Speed Static RAM Features The EDI8M32512CA, a high speed, high performance, 16 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs.

Contextual Info: Section 21 Electrical Specifications 21.1 Absolute Maximum Ratings Table 21-1 lists the absolute maximum ratings. Table 21-1 Absolute M aximum Ratings Item Symbol Rating Unit Supply voltage v cc -0 .3 to + 7.0 V Programming voltage Vpp -0 .3 t o +14.0 V Input voltage at ports not

LP30-250

Abstract: h8 ss 125 transistor P82 transistor timer network
Contextual Info: Section 21 Electrical Specifications 21.1 Absolute Maximum Ratings Table 21-1 lists the absolute maximum ratings, liable 21-1 Absolute M aximum Ratings Item Symbol Rating Unit Supply voltage v cc -0 .3 to + 7.0 V Programming voltage Vpp -0 .3 t o +14.0 V Input voltage at ports not

Contextual Info: CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese­ lected (CY7C168A The CY7C168A and CY7C169A are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits. Easy memory ex­

CS91

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

TI33

Contextual Info: PERFORMANCE SEMICONDUCTOR EOE D • TObBST? D Q 0 0 ti33 1 P4C1257/P4C1257L ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS SCRAMS A -FEATURES High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial)

sram 2112

Abstract: 2114 static ram STATIC RAM 2114
Contextual Info: S-22S10R/I 64-word X4-bit parallel NON-VOLATILE RAM The S-22S10R/I is a non-volatile CM OS RAM, co m p o se d of a CM OS static RAM and a non-volatile e le ctrically erasable p ro gram m ab le m em ory E2PROM to backup the SRAM. The organization is 64-w ord x 4-bit (total 256 bits) and the

Contextual Info: ìf CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected CY7C168A T he CY7C168A and CY7C169A are highperform ance CM O S static RA M s orga­ nized as 4096 by 4 bits. Easy m em ory ex­ pansion isprovidedby an active LO W chip

1502B

Abstract: cmos dynamic ram 256kx1 p4c1257
Contextual Info: PERFORMANCE SEMICONDUCT OR 20E D TObBST? DQD0t,33 T P4C1257/P4C1257L ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS SCRAMS FEATURES • High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military) Data Retention with 2.0V Supply

MN 2114 static ram

Abstract: a12t 2116 static ram LA12T
Contextual Info: LOGIC DEVICES INC BhE D • S S b S T Q S OOOlOafi M ■ _ 8K x 8 Static RAM with Flash Clear Low FEATURES; L7C186/L7CL186 power O iS G R IP T lO N □ 8K x 8 CMOS Static RAM with High Speed Flash Clear □ Auto-Powerdown Design

3004x

Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

FSS101

Abstract: S101 s101 marking marking S101 m6598
Contextual Info: Ordering number:ENN5984A P-Channel Silicon MOSFET FSS101 Load S/W Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [FSS101] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43

5885

Abstract: FSS202 ta2128
Contextual Info: Ordering number:EN5885A N-Channel Silicon MOSFET FSS202 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS202] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1:Source 2:Source

marking S132

Abstract: FSS132 S132 TA2720
Contextual Info: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27

FSS133

Abstract: S133
Contextual Info: Ordering number : ENN6919 FSS133 P-Channel Silicon MOSFET FSS133 _ Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS133] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

CS91 Series

Abstract: CS91 fujitsu inverter air F0609
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-3E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

M2026

Abstract: VGS-50-5 DS2-DC ta2129 FSS206 EN5886A
Contextual Info: Ordering number:EN5886A N-Channel Silicon MOSFET FSS206 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS206] 5 4 0.595 1.27 0.43 0.1 1.5 5.0 1:Source 2:Source 3:Source 4:Gate 5:Drain 6:Drain 7:Drain

FSS238

Abstract: S238 PG2520
Contextual Info: Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS238] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate