212GH Search Results

fhc40lg

Abstract: 18GHZ low noise hemt FH40LG
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

6795 561

Abstract: FMA3007
Contextual Info: FMA3007 Production Datasheet v3.0 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: VG2 17 dBm Output Power 11 dB Gain pHEMT Technology Input Return Loss < -13dB Output Return Loss < -11dB Voltage Gain Control VDD RF Input

fhc40lg

Abstract: 18GHZ LG 932 fujitsu hemt
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

UM 7106

Contextual Info: FMA3007 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • Production Datasheet v3.0 FUNCTIONAL SCHEMATIC: 17 dBm Output Power 11 dB Gain pHEMT Technology Input Return Loss < -13dB Output Return Loss < -11dB Voltage Gain Control VG2 VDD RF Input

fujitsu hemt

Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Contextual Info: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability

SNA-486

Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
Contextual Info: Table of Contents Model Description SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 Low-Noise GaAs FETs 1-2GHz 0.8dB NF r 2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB NF {n}4GHz 2-26GHz 0.6dB NF ® 12GHz 2-26G H z0.5dB N F ® 12G H z

FMA3008

Abstract: 2-20GHZ UM 7108 F
Contextual Info: FMA3008 Production Datasheet v2.9 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • FUNCTIONAL SCHEMATIC: 23 dBm Output Power 11dB Gain pHEMT Technology Input Return Loss < -8dB Output Return Loss < -10dB VDD RF Input RF Output GENERAL DESCRIPTION:

Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

08/bup 3110 transistor

Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

Low Noise HEMT

Abstract: Super low noise figure and high associated gain
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

FMA3008

Contextual Info: FMA3008 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • Production Datasheet v2.9 FUNCTIONAL SCHEMATIC: 23 dBm Output Power 11dB Gain pHEMT Technology Input Return Loss < -8dB Output Return Loss < -10dB VDD RF Input RF Output GENERAL DESCRIPTION:

2A237

Abstract: MST105D MST205N MSP105F A7TA MSP205R 513008 STHW68S MSP105D MST405N
Contextual Info: Untitled Cross Reference List - Apem Competitor P/N STHW68S STHW69N STHW69R STJW65N STJW65NTR STJW65R STJW65RTR STJW66N STJW66NTR STJW67N STJW67NTR STJW67R STW67RTR STJW68S STJW68STR STJW69N STJW69NTR STJW69R STJW69RTR SDTM21N SDTM21NTR SDTM21R SDTM21RTR SDTM21RWTR