2145MHZ Search Results

2145MHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
319345S12 Abstract: 165235SM12 135185SM5 0709s 12-2 3980-4900MHz 398490s12 600-1200MHz 15-17S 025050S Contextual Info: Model Number Frequency Tuning Tuning VCC ICC Voltage Sensitivity MHz 001001SMC5TM 10-10 MHz Output 2ND Noise Power c 10 KHz (VDC) (MHz/v) (VDC) (mA) (dBm) (dBc) (dBc) 1-3.5 3 5 25 -10 -110 004004SM5 42-46 MHz 0.5-4.5 3 5 8 -3±1 -13 -118 006009SMI12 60-90MHz	Original	001001SMC5TM 004004SM5 006009SMI12 60-90MHz 007008SM10 64MHz 013015SMi9 130-150MHz 015020SM5 150-200MHz 319345S12 165235SM12 135185SM5 0709s 12-2 3980-4900MHz 398490s12 600-1200MHz 15-17S 025050S	PDF
sumitomo connectors Abstract: HUW0724101-01A Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4270-xx/RH2 Series HUW0724101-01A December 28, 2007 Technical Specification of 1.31µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4270-xx/RH2 Series RoHS Compliant	Original	SLW4270-xx/RH2 HUW0724101-01A sumitomo connectors HUW0724101-01A	PDF
LTE repeater Abstract: E4418B E4440A IFR3414 2145MHz Contextual Info: Power Amplifier RFP-2135-49-48GD Product Features Application • GaN on SiC + Doherty Technology • High Efficiency • Solid-state Linear Design • Suitable for WCDMA/LTE • 50 Ohm Input/Output Impedance • High Reliability and Ruggedness • Built in Output Isolator	Original	RFP-2135-49-48GD 2145MHz 20MHz 49dBm/ TS-25 LTE repeater E4418B E4440A IFR3414 2145MHz	PDF
UGF21090 Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers	Original	UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100ain 28VDC, 2140MHz 84MHz UGF21090 UGF21090F UGF21090P 50 watts amplifier 10mhz	PDF
2500bl14m050 Contextual Info: Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer ADL5802 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS VPOS RF1+ RF1– GND RF2+ RF2– 24 22 21 20 19 GND 1 18 GND GND 2 17 GND OP1+ 3 16 OP2+ OP1– 4 15 OP2– GND 5 VPOS Cellular base station receivers	Original	ADL5802 CP-24-7) ADL5802ACPZ-R7 ADL5802-EVALZ 24-Lead CP-24-7 2500bl14m050	PDF
balun tc1-1-13m Abstract: RO3003 MO-220-VGGD-8 johanson balun 868 Contextual Info: FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm Typical LO drive of 0 dBm Low LO leakage Single supply operation: 5 V @ 240 mA Exposed paddle, 4 mm x 4 mm, 24-lead LFCSP package	Original	24-lead ADL5802 CP-24-3 4-11-2012-A ADL5802 D07882-0-6/12 balun tc1-1-13m RO3003 MO-220-VGGD-8 johanson balun 868	PDF
dfb 10mw Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLW541A series Document No. : HUW0825002-01A Date of issue : May 14, 2008 Technical Specification of 1.47-1.61µm DFB Laser Diode Module for wireless communication system application SLW541A series RoHS Compliant	Original	SLW541A HUW0825002-01A 1000ppyls dfb 10mw	PDF
SC connector 2.5Ghz 1550 nm Contextual Info: Sumitomo Electric Industries, Ltd. Document No. : HUW0225058-01B Date of issue : June 24, 2003 Technical Specification of 1.5µm DFB Laser Diode Module for wireless communication system application SLW5416 series Sumitomo Electric Industries, Ltd. 1/6 Sumitomo Electric Industries, Ltd.	Original	HUW0225058-01B SLW5416 SLW5416-CB-10 1510nm IRO-D01002 500uA 800uA SC connector 2.5Ghz 1550 nm	PDF
HUW0824141-01A Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4860-xx/RH2 Series HUW0824141-01A November 19, 2008 Technical Specification of 1.31µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4860-xx/RH2 Series RoHS Compliant	Original	SLW4860-xx/RH2 HUW0824141-01A HUW0824141-01A	PDF
UGF21030F Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701 Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21030 UGF21030F Cree Microwave MRF21030 UGF21030P 21701	PDF
UGF21045F Contextual Info: UGF21045 45W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. It’s ideally suitable for CDMA, W-CDMA, GSM,TDMA and Multi-Carrier power amplifiers in	Original	UGF21045 MRF21045/MRF21045S. UGF21045 UGF21045F	PDF