Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    215 BGA Search Results

    215 BGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860PVR80D4 Rochester Electronics LLC 32-BIT, 80MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC855TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860ENZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    215 BGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    256 ball bga

    Abstract: BCM5238 BCM5421 smii 1.4
    Text: BCM5238 10/100BASE-TX OCTAL-Φ TRANSCEIVER SUMMARY OF BENEFITS FEATURES • • • • • • • • • • • • • • Target usage: Fast Ethernet switches. • Lowest per port power solution available:< 215 milliwatts per Single-chip, eight-port Fast Ethernet transceiver


    Original
    PDF BCM5238 10/100BASE-TX 10BASE-T 128-pin 256-ball BCM5238 5238-PB07-R 256 ball bga BCM5421 smii 1.4

    Untitled

    Abstract: No abstract text available
    Text: High-Frequency Center Probe Test Socket for Devices up to 55mm Square FEATURES • For high-frequency test of CSP, BGA, DSP, LGA, SRAM, DRAM and Flash Devices • Any device on 0.30mm pitch or larger • 4-point crown insures “scrub” on solder oxides, while pointed probe works with


    Original
    PDF

    PCN0712

    Abstract: GE100LFCS SUMITOMO EME G770 Hitachi CEL-9750ZHF10AKL nitto GE CEL-9750ZHF10AKL sumitomo g770 EME-G770 Nitto GE100LFCS Nitto GE 100
    Text: Revision: 1.0.1 PROCESS CHANGE NOTIFICATION PCN0712 MOLD COMPOUND CHANGES FOR BGA, UBGA, MBGA AND FBGA PACKAGES Change Description: Altera is implementing mold compound material changes to the wire bonded Plastic Ball-Grid Array BGA , Ultra FineLine Ball-Grid Array (UBGA), Micro FineLine Ball-Grid Array


    Original
    PDF PCN0712 CEL-9750ZHF10AKL GE-100LFCS GE-100LFCS PCN0712 GE100LFCS SUMITOMO EME G770 Hitachi CEL-9750ZHF10AKL nitto GE sumitomo g770 EME-G770 Nitto GE100LFCS Nitto GE 100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS816218A B/D /GS816236A(B/D)/GS816272A(C) MHz–200 MHz 1M x 18, 512K x 36, 256K x 72 300 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation


    Original
    PDF GS816218A /GS816236A /GS816272A 209-Pin 165-bump 816218A

    HD6417709SBP167BV

    Abstract: reflow soldering profile BGA SH7709S SH3-DSP HD6417706BP133V HD6417727BP160V Hitachi DSA00207
    Text: HITACHI MICROCOMPUTER TECHNICAL UPDATE No. TN-SH7-380A/E DATE 22 November 2001 THEME SH3,SH3-DSP BGA Package usage notice in Reflow Soldering Spec change Supplement of Documents CLASSIFICATION Limitation on Use PRODUCTNAME HD6417706BP133V, HD6417709SBP167BV, HD6417709SBP133BV,HD6417709SBP100BV,


    Original
    PDF TN-SH7-380A/E HD6417706BP133V, HD6417709SBP167BV, HD6417709SBP133BV HD6417709SBP100BV, HD6417729RBP167BV, HD6417729RBP133BV HD6417729RBP100BV, HD6417622BP100V HD6417622BP80V, HD6417709SBP167BV reflow soldering profile BGA SH7709S SH3-DSP HD6417706BP133V HD6417727BP160V Hitachi DSA00207

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8162Z18A B/D /GS8162Z36A(B/D)/GS8162Z72A(C) 119, 165, & 209 BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original
    PDF GS8162Z18A /GS8162Z36A /GS8162Z72A 8162Z18A 8162Z18

    Untitled

    Abstract: No abstract text available
    Text: +9 4 1  BGA3031 DOCSIS 3.0 upstream amplifier Rev. 1 — 15 August 2013 Product data sheet 1. General description The BGA3031 is an upstream amplifier meeting the Data Over Cable Service Interface Specifications DOCSIS 3.0). It is designed for cable modem, CATV set top box and VoIP


    Original
    PDF BGA3031 BGA3031

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL53B2863F-K9M/F8M/E7M REV: 1.1 General Information 1GB 128Mx72 DDR3 SDRAM ULP REGISTERED Mini-RDIMM 244-PIN Description The VL53B2863F is a 128Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of nine CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in


    Original
    PDF VL53B2863F-K9M/F8M/E7M 128Mx72 244-PIN VL53B2863F 128Mx8 28-bit 244-pin 244-pin,

    DDR3-1066

    Abstract: DDR3-1333 PC3-10600 A6211
    Text: Product Specifications PART NO.: VL53B2863F-K9M/F8M/E7M REV: 1.1 General Information 1GB 128Mx72 DDR3 SDRAM ULP REGISTERED Mini-RDIMM 244-PIN Description The VL53B2863F is a 128Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of nine CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in


    Original
    PDF VL53B2863F-K9M/F8M/E7M 128Mx72 244-PIN VL53B2863F 128Mx8 28-bit 244-pin 244-pin, DDR3-1066 DDR3-1333 PC3-10600 A6211

    Untitled

    Abstract: No abstract text available
    Text: GS816236BD-200M 200 MHz 3.3 V and 2.5 V VDD 3.3 V and 2.5 V I/O 512K x 36 18Mb Sync Burst SRAM 165-Bump BGA Military Temp Base datasheet: GS816218/36BD Product s covered in this document: GS816236BD-200M Product specification(s) addressed by this document:


    Original
    PDF GS816236BD-200M 165-Bump GS816218/36BD GS816236BD-200M GS816236BD-200MT.

    Untitled

    Abstract: No abstract text available
    Text: GS8162Z18 B/D /GS8162Z36(B/D)/GS8162Z72(C) 119, 165, & 209 BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original
    PDF GS8162Z18 /GS8162Z36 /GS8162Z72 8162Z18

    Untitled

    Abstract: No abstract text available
    Text: GS816218 B/D /GS816236(B/D)/GS816272(C) 1M x 18, 512K x 36, 256K x 72 18Mb S/DCD Sync Burst SRAMs 119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable


    Original
    PDF GS816218 /GS816236 /GS816272 209-Pin 133MHz x18/x36 165-bump

    Untitled

    Abstract: No abstract text available
    Text: +9 4 1  BGA3031 DOCSIS 3.0 plus upstream amplifier Rev. 2 — 26 February 2014 Product data sheet 1. General description The BGA3031 is an upstream amplifier meeting the Data Over Cable Service Interface Specifications DOCSIS 3.0). It is designed for cable modem, CATV set top box and VoIP


    Original
    PDF BGA3031 BGA3031 64-QAM

    13007 h3

    Abstract: passing H7 K744 gw 340 13007 h4
    Text: Preliminary GS816218A B/D /GS816236A(B/D)/GS816272A(C) MHz–200 MHz 1M x 18, 512K x 36, 256K x 72 300 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation


    Original
    PDF GS816218A /GS816236A /GS816272A 209-Pin x18/x36 816218A 165-bump 13007 h3 passing H7 K744 gw 340 13007 h4

    PSR4000 AUS308

    Abstract: prepreg GHPL-830 taiyo AUS703 taiyo PSR4000 aus303 GHPL-830 THP 100 PSR4000 AUS703 Hitachi MCL-E-679FG MGC HL832 MCL-E-679FG
    Text: Ball Grid Array Ball Grid Array • INTRODUCTION Ball Grid Array BGA is the one of package type which using the SMT. BGA package has several advantages for it's electrical, mechanical and thermal characteristics and these characteristics can come from it's outstanding structure. By using the PCB board and solder ball array


    Original
    PDF HL832 HL832-HS HL832-NB MCL-E-679W MCL-E-679BR MCL-E-679FG GHPL-830 GEA-679N MR600 GHPL-830 PSR4000 AUS308 prepreg GHPL-830 taiyo AUS703 taiyo PSR4000 aus303 THP 100 PSR4000 AUS703 Hitachi MCL-E-679FG MGC HL832 MCL-E-679FG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8162Z18/36/72B-250/225/200/166/150/133 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119 and 209 BGA Commercial Temp Industrial Temp Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original
    PDF GS8162Z18/36/72B-250/225/200/166/150/133 8162Z18

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS816218/36/72B-250/225/200/166/150/133 1M x 18, 512K x 36, 256K x 72 16Mb S/DCD Sync Burst SRAMs 119- and 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable


    Original
    PDF GS816218/36/72B-250/225/200/166/150/133 209-Pin x18/x36 119-Bump

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8162Z18/36/72B-250/225/200/166/150/133 16Mb Pipelined and Flow Through Synchronous NBT SRAM 119 and 209 BGA Commercial Temp Industrial Temp Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original
    PDF GS8162Z18/36/72B-250/225/200/166/150/133

    K4B2G0846C-HCH9

    Abstract: roundup DDR3 miniDIMM JEDEC K4B2G0846CHCH9 VL51B5763F VL51B5763F-F8S A6211 DDR3-1066 80 pin miniDIMM K4B2G0846C-HC
    Text: Product Specifications PART NO.: VL51B5763F-F8S REV: 1.1 General Information 2GB 256Mx72 DDR3 SDRAM ULP ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5763F is a 256Mx72 DDR3 SDRAM high density Mini-UDIMM. This memory module consists of nine CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin MLF


    Original
    PDF VL51B5763F-F8S 256Mx72 244-PIN VL51B5763F 256Mx8 244-pin 244-pin, VN-031209 K4B2G0846C-HCH9 roundup DDR3 miniDIMM JEDEC K4B2G0846CHCH9 VL51B5763F-F8S A6211 DDR3-1066 80 pin miniDIMM K4B2G0846C-HC

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL51B5263A-K9S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin MLF


    Original
    PDF VL51B5263A-K9S 512Mx72 244-PIN VL51B5263A 256Mx8 244-pin 244-pin, PC3-10600

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL51B5263A-K9M REV: 1.1 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in


    Original
    PDF VL51B5263A-K9M 512Mx72 244-PIN VL51B5263A 256Mx8 244-pin 244-pin, VN-130809

    MT41J256M8HX

    Abstract: A6211 DDR3-1333 PC3-10600 connector pcb mounted VN13
    Text: Product Specifications PART NO.: VL51B5263A-K9M REV: 1.1 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in


    Original
    PDF VL51B5263A-K9M 512Mx72 244-PIN VL51B5263A 256Mx8 244-pin 244-pin, VN-130809 MT41J256M8HX A6211 DDR3-1333 PC3-10600 connector pcb mounted VN13

    DQ56

    Abstract: K4B1G0846E A6211 DDR3-1333 PC3-10600 DDR3 miniDIMM JEDEC NC177
    Text: Product Specifications PART NO.: VL51B5263A-K9S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin MLF


    Original
    PDF VL51B5263A-K9S 512Mx72 244-PIN VL51B5263A 256Mx8 244-pin 244-pin, PC3-10600 DQ56 K4B1G0846E A6211 DDR3-1333 PC3-10600 DDR3 miniDIMM JEDEC NC177

    TSOP infrared

    Abstract: proof hot air bga reflow hot air BGA "Humidity Indicator Card" Hitachi DSA0015 baking
    Text: ASSEMBLY 7-1 Soldering Methods for Various Surface Mount Packages QFP SOP TQFP TSSOP QFJ LQFP SSOP TSOP HQFP SOJ HSOP Soldering Methods Partial Heating Methods QFI HSOI G-QFP G-QFJ QFN LDPAK S Other discrete BGA HQFI packages not FBGA (CSP) listed to the left


    Original
    PDF